JPS5683940A - Manufacturing of semiconductor device - Google Patents
Manufacturing of semiconductor deviceInfo
- Publication number
- JPS5683940A JPS5683940A JP16178779A JP16178779A JPS5683940A JP S5683940 A JPS5683940 A JP S5683940A JP 16178779 A JP16178779 A JP 16178779A JP 16178779 A JP16178779 A JP 16178779A JP S5683940 A JPS5683940 A JP S5683940A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thermal conductivity
- conductive layer
- layer
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000010894 electron beam technology Methods 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To leave a metalic layer only on a conductive layer without having a damage of other portions by a method wherein a metal of low melting point is formed across an insulative layer and a conductive layer on a semiconductor base plated and either a laser or an electron beam is projected. CONSTITUTION:On Si base plate 1 is formed a conductive layer 3 such as a poly- Si or Mo etc. having a high rate of thermal conductivity buried in SiO2 film 2 having a low rate of thermal conductivity, and covered by Al film 4. Laser or electron beam is uniformly radiated over an entire surface, and an amount of radiation is selected to show a critical tempeature such that Al on the insulation film 2 such as SiO2 etc. is evaporated and removed. As a result, Al is selectively left in a part 4a having a high rate of thermal conductivity. Al 5 is evaporated again over the portion 4a, the Al 4a is buried therein to make a flat pattern. When an insulative film is left in the pitting or opening part, the Al portion is similarly removed, so that Al may be coated again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16178779A JPS5683940A (en) | 1979-12-12 | 1979-12-12 | Manufacturing of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16178779A JPS5683940A (en) | 1979-12-12 | 1979-12-12 | Manufacturing of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5683940A true JPS5683940A (en) | 1981-07-08 |
Family
ID=15741893
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16178779A Pending JPS5683940A (en) | 1979-12-12 | 1979-12-12 | Manufacturing of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5683940A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5788733A (en) * | 1980-09-22 | 1982-06-02 | Texas Instruments Inc | Method of forming pattern by sublimation |
| JPS60231372A (en) * | 1984-04-28 | 1985-11-16 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
-
1979
- 1979-12-12 JP JP16178779A patent/JPS5683940A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5788733A (en) * | 1980-09-22 | 1982-06-02 | Texas Instruments Inc | Method of forming pattern by sublimation |
| JPS60231372A (en) * | 1984-04-28 | 1985-11-16 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
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