JPS5615070A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5615070A JPS5615070A JP9141979A JP9141979A JPS5615070A JP S5615070 A JPS5615070 A JP S5615070A JP 9141979 A JP9141979 A JP 9141979A JP 9141979 A JP9141979 A JP 9141979A JP S5615070 A JPS5615070 A JP S5615070A
- Authority
- JP
- Japan
- Prior art keywords
- molybdenum
- silicide
- film
- semiconductor device
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 3
- 229910052750 molybdenum Inorganic materials 0.000 abstract 3
- 239000011733 molybdenum Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910021332 silicide Inorganic materials 0.000 abstract 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 239000003814 drug Substances 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To protect an electrode wire from externally oxidation and corrosion due to medicine in a semiconductor device by coating the periphery of a high melting point metal such as molybdenum, tungsten and the like with metal silicide to form the electrode wire. CONSTITUTION:A P-type silicon semiconductor substrate 1 is heat treated to form a silicon dioxide film 2 on the surface. A molybdenum layer 3 is coated on the film 2. The layer 3 is selectively etched by a photoetching process to form a molybdenum electrode 4. MOS diode element is heated in nitrogen atmosphere for 30min to treat the surface with silicide to form a molybdenum silicide film 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54091419A JPS6030110B2 (en) | 1979-07-18 | 1979-07-18 | Semiconductor device and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54091419A JPS6030110B2 (en) | 1979-07-18 | 1979-07-18 | Semiconductor device and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5615070A true JPS5615070A (en) | 1981-02-13 |
| JPS6030110B2 JPS6030110B2 (en) | 1985-07-15 |
Family
ID=14025842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54091419A Expired JPS6030110B2 (en) | 1979-07-18 | 1979-07-18 | Semiconductor device and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6030110B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5720453A (en) * | 1980-07-14 | 1982-02-02 | Toshiba Corp | Semiconductor device |
| JPS5846650A (en) * | 1981-09-16 | 1983-03-18 | Nippon Telegr & Teleph Corp <Ntt> | Structure of electrode wiring and its manufacture |
| JPS5846651A (en) * | 1981-09-16 | 1983-03-18 | Nippon Telegr & Teleph Corp <Ntt> | Structure of electrode wiring and its manufacture |
| JPS60193362A (en) * | 1984-03-14 | 1985-10-01 | Mitsubishi Electric Corp | Semiconductor device |
| JPS6362356A (en) * | 1986-09-03 | 1988-03-18 | Mitsubishi Electric Corp | Semiconductor device |
| JPS63124549A (en) * | 1986-11-14 | 1988-05-28 | Nec Corp | Semiconductor device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112176235A (en) * | 2020-09-14 | 2021-01-05 | 自贡硬质合金有限责任公司 | Molybdenum alloy and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51147273A (en) * | 1975-06-13 | 1976-12-17 | Fujitsu Ltd | Manufacturing process of semiconductor device |
-
1979
- 1979-07-18 JP JP54091419A patent/JPS6030110B2/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51147273A (en) * | 1975-06-13 | 1976-12-17 | Fujitsu Ltd | Manufacturing process of semiconductor device |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5720453A (en) * | 1980-07-14 | 1982-02-02 | Toshiba Corp | Semiconductor device |
| JPS5846650A (en) * | 1981-09-16 | 1983-03-18 | Nippon Telegr & Teleph Corp <Ntt> | Structure of electrode wiring and its manufacture |
| JPS5846651A (en) * | 1981-09-16 | 1983-03-18 | Nippon Telegr & Teleph Corp <Ntt> | Structure of electrode wiring and its manufacture |
| JPH0117255B2 (en) * | 1981-09-16 | 1989-03-29 | Nippon Telegraph & Telephone | |
| JPH0228893B2 (en) * | 1981-09-16 | 1990-06-27 | Nippon Telegraph & Telephone | |
| JPS60193362A (en) * | 1984-03-14 | 1985-10-01 | Mitsubishi Electric Corp | Semiconductor device |
| JPS6362356A (en) * | 1986-09-03 | 1988-03-18 | Mitsubishi Electric Corp | Semiconductor device |
| JPS63124549A (en) * | 1986-11-14 | 1988-05-28 | Nec Corp | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6030110B2 (en) | 1985-07-15 |
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