JPS5745228A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5745228A
JPS5745228A JP55120044A JP12004480A JPS5745228A JP S5745228 A JPS5745228 A JP S5745228A JP 55120044 A JP55120044 A JP 55120044A JP 12004480 A JP12004480 A JP 12004480A JP S5745228 A JPS5745228 A JP S5745228A
Authority
JP
Japan
Prior art keywords
film
electrode
alloyed
particles
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55120044A
Other languages
Japanese (ja)
Inventor
Kaoru Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP55120044A priority Critical patent/JPS5745228A/en
Publication of JPS5745228A publication Critical patent/JPS5745228A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To form an electrode having a low contact resistance for the subject semiconductor device by a method wherein a selected etching is performed successively on the high melting point metal film, provided on a semiconductor substrate, and an Al-Si alloyed film and a heating treatment is performed after a pattern has been formed. CONSTITUTION:After a Ti film 5 and the Al-Si alloyed film 6 have been successively coated on the P type Si substrate 1 having an N<+> layer 3 using a sputtering method or the like, the Al contained in he alloyed film 6 is removed (7 indicates Si particles) using an acid having phosphoric acid as a principal ingredient, the Si particles 7 and the Ti film 5 are selectively removed using a plasma etching of CF4 and the like, then a heat treatment is performed at the temperature of 450 deg.C for thirty minutes in dry N2 atmosphere, and an electrode is formed. Through these procedures, junction breakdown and an increase of leak current are prevented and an electrode having a low contact resistance can be formed.
JP55120044A 1980-08-29 1980-08-29 Manufacture of semiconductor device Pending JPS5745228A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55120044A JPS5745228A (en) 1980-08-29 1980-08-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55120044A JPS5745228A (en) 1980-08-29 1980-08-29 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5745228A true JPS5745228A (en) 1982-03-15

Family

ID=14776501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55120044A Pending JPS5745228A (en) 1980-08-29 1980-08-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5745228A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0243024A2 (en) * 1986-04-11 1987-10-28 AT&T Corp. Metallized semiconductor device including an interface layer
JPS62283643A (en) * 1986-05-02 1987-12-09 アドバンスト・マイクロ・デイバイシズ・インコ−ポレ−テツド Metallic contact system

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5380966A (en) * 1976-12-27 1978-07-17 Hitachi Ltd Manufacture of electrode fdr semiconductor device
JPS5583253A (en) * 1978-12-19 1980-06-23 Fujitsu Ltd Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5380966A (en) * 1976-12-27 1978-07-17 Hitachi Ltd Manufacture of electrode fdr semiconductor device
JPS5583253A (en) * 1978-12-19 1980-06-23 Fujitsu Ltd Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0243024A2 (en) * 1986-04-11 1987-10-28 AT&T Corp. Metallized semiconductor device including an interface layer
JPS62283643A (en) * 1986-05-02 1987-12-09 アドバンスト・マイクロ・デイバイシズ・インコ−ポレ−テツド Metallic contact system

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