JPS5779663A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5779663A
JPS5779663A JP55155376A JP15537680A JPS5779663A JP S5779663 A JPS5779663 A JP S5779663A JP 55155376 A JP55155376 A JP 55155376A JP 15537680 A JP15537680 A JP 15537680A JP S5779663 A JPS5779663 A JP S5779663A
Authority
JP
Japan
Prior art keywords
electrodes
substrate
facilitate
oxide film
metal silicide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55155376A
Other languages
Japanese (ja)
Other versions
JPS6044823B2 (en
Inventor
Shinichi Inoue
Nobuo Toyokura
Hajime Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55155376A priority Critical patent/JPS6044823B2/en
Priority to IE259181A priority patent/IE52791B1/en
Priority to EP19810305257 priority patent/EP0051500B1/en
Priority to DE8181305257T priority patent/DE3173835D1/en
Publication of JPS5779663A publication Critical patent/JPS5779663A/en
Publication of JPS6044823B2 publication Critical patent/JPS6044823B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To make a resistance low and to facilitate an oxidation treatment by using a metal silicide containing effective impurities for a semiconductor layer as a mutual connector and electrode constituents.
CONSTITUTION: A metal silicide containing phosphorus, e.g., a molybdenum silicide is deposited on an Si substrate 21 having a field oxide film 22 selectively to permit source and drain electrodes 25, 26 to be formed. And, an oxide film is formed on the Si substrate exposed between the electrodes by means of a heat treatment, and impurities contained in the electrodes are diffused into the substrate to form source and drain regions 23, 24. Hereby, it is possible to make resistance low and to facilitate an oxidation treatment.
COPYRIGHT: (C)1982,JPO&Japio
JP55155376A 1980-11-05 1980-11-05 Manufacturing method of semiconductor device Expired JPS6044823B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP55155376A JPS6044823B2 (en) 1980-11-05 1980-11-05 Manufacturing method of semiconductor device
IE259181A IE52791B1 (en) 1980-11-05 1981-11-04 Semiconductor devices
EP19810305257 EP0051500B1 (en) 1980-11-05 1981-11-05 Semiconductor devices
DE8181305257T DE3173835D1 (en) 1980-11-05 1981-11-05 Semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55155376A JPS6044823B2 (en) 1980-11-05 1980-11-05 Manufacturing method of semiconductor device

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP16460284A Division JPS6063967A (en) 1984-08-06 1984-08-06 Manufacture of insulated gate type fet
JP16460384A Division JPS6063962A (en) 1984-08-06 1984-08-06 Manufacture of bi-polar transistor
JP59164604A Division JPS6063955A (en) 1984-08-06 1984-08-06 Manufacture of dynamic memory

Publications (2)

Publication Number Publication Date
JPS5779663A true JPS5779663A (en) 1982-05-18
JPS6044823B2 JPS6044823B2 (en) 1985-10-05

Family

ID=15604578

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55155376A Expired JPS6044823B2 (en) 1980-11-05 1980-11-05 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6044823B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59213172A (en) * 1983-05-19 1984-12-03 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPS59213171A (en) * 1983-05-19 1984-12-03 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6053077A (en) * 1983-07-29 1985-03-26 モトローラ　インコーポレーテッド Silicide bipolar transistor and method of producing same transistor
JPS60211871A (en) * 1984-04-05 1985-10-24 Nec Corp Semiconductor memory

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6322225U (en) * 1986-07-29 1988-02-13

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5340291A (en) * 1976-09-27 1978-04-12 Hitachi Ltd Manufacture of semiconductor device
JPS5380986A (en) * 1976-12-25 1978-07-17 Toshiba Corp Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5340291A (en) * 1976-09-27 1978-04-12 Hitachi Ltd Manufacture of semiconductor device
JPS5380986A (en) * 1976-12-25 1978-07-17 Toshiba Corp Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59213172A (en) * 1983-05-19 1984-12-03 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPS59213171A (en) * 1983-05-19 1984-12-03 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6053077A (en) * 1983-07-29 1985-03-26 モトローラ　インコーポレーテッド Silicide bipolar transistor and method of producing same transistor
JPS60211871A (en) * 1984-04-05 1985-10-24 Nec Corp Semiconductor memory

Also Published As

Publication number Publication date
JPS6044823B2 (en) 1985-10-05

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