JPS57141968A - Insulated gate type field effect transistor - Google Patents

Insulated gate type field effect transistor

Info

Publication number
JPS57141968A
JPS57141968A JP56103073A JP10307381A JPS57141968A JP S57141968 A JPS57141968 A JP S57141968A JP 56103073 A JP56103073 A JP 56103073A JP 10307381 A JP10307381 A JP 10307381A JP S57141968 A JPS57141968 A JP S57141968A
Authority
JP
Japan
Prior art keywords
film
oxide film
openings
electrode
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56103073A
Other languages
Japanese (ja)
Other versions
JPS6118350B2 (en
Inventor
Taiichi Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56103073A priority Critical patent/JPS57141968A/en
Publication of JPS57141968A publication Critical patent/JPS57141968A/en
Publication of JPS6118350B2 publication Critical patent/JPS6118350B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To prevent short circuits between electrodes and to eliminate the break of electrode wires by flattening the surface, by embedding a heat oxide film in the area between a gate electrode, a source electrode, and a drain electrode which comprise polycrystal Si, respectively, and are formed on a semiconductor substrate. CONSTITUTION:A thick field oxide film 12 is provided at the peripheral part of the semiconductor substrate 1. A thin oxide film is deposited on the surface of the substrate 1 to form gate oxide film 14. Openings 13-15 corresponding to source and drain regions are provided on both sides of the film 14 so that its central part remains. Then a thick polycrystal Si film 16 is grown on the entire surface, and coated by an Si3N4 film 17 and an SiO2 film 18. They are left on only the gate region and openings 13 and 15, and the other area is removed. Thereafter, impurities are diffused in the substrate 1 on both sides of the openings 13 and 15, the source region 2 and the drain region 3, which are divided into two parts, are formed and heat treated, and an oxide film 23 is formed in the remaining Si film 16 so as to bury the parts. At the same time, the regions 2 and 3 which are divided by the heat treatment is incorporated to form a unitary body.
JP56103073A 1981-07-01 1981-07-01 Insulated gate type field effect transistor Granted JPS57141968A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56103073A JPS57141968A (en) 1981-07-01 1981-07-01 Insulated gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56103073A JPS57141968A (en) 1981-07-01 1981-07-01 Insulated gate type field effect transistor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP47010360A Division JPS58190B2 (en) 1972-01-27 1972-01-27 Transistor

Publications (2)

Publication Number Publication Date
JPS57141968A true JPS57141968A (en) 1982-09-02
JPS6118350B2 JPS6118350B2 (en) 1986-05-12

Family

ID=14344468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56103073A Granted JPS57141968A (en) 1981-07-01 1981-07-01 Insulated gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS57141968A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6161466A (en) * 1984-09-03 1986-03-29 Fujitsu Ltd Manufacturing method for semiconductor devices
US6323524B1 (en) * 1997-05-20 2001-11-27 Advanced Micro Devices, Inc. Semiconductor device having a vertical active region and method of manufacture thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6161466A (en) * 1984-09-03 1986-03-29 Fujitsu Ltd Manufacturing method for semiconductor devices
US6323524B1 (en) * 1997-05-20 2001-11-27 Advanced Micro Devices, Inc. Semiconductor device having a vertical active region and method of manufacture thereof

Also Published As

Publication number Publication date
JPS6118350B2 (en) 1986-05-12

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