JPS57141968A - Insulated gate type field effect transistor - Google Patents
Insulated gate type field effect transistorInfo
- Publication number
- JPS57141968A JPS57141968A JP56103073A JP10307381A JPS57141968A JP S57141968 A JPS57141968 A JP S57141968A JP 56103073 A JP56103073 A JP 56103073A JP 10307381 A JP10307381 A JP 10307381A JP S57141968 A JPS57141968 A JP S57141968A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- openings
- electrode
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Landscapes
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To prevent short circuits between electrodes and to eliminate the break of electrode wires by flattening the surface, by embedding a heat oxide film in the area between a gate electrode, a source electrode, and a drain electrode which comprise polycrystal Si, respectively, and are formed on a semiconductor substrate. CONSTITUTION:A thick field oxide film 12 is provided at the peripheral part of the semiconductor substrate 1. A thin oxide film is deposited on the surface of the substrate 1 to form gate oxide film 14. Openings 13-15 corresponding to source and drain regions are provided on both sides of the film 14 so that its central part remains. Then a thick polycrystal Si film 16 is grown on the entire surface, and coated by an Si3N4 film 17 and an SiO2 film 18. They are left on only the gate region and openings 13 and 15, and the other area is removed. Thereafter, impurities are diffused in the substrate 1 on both sides of the openings 13 and 15, the source region 2 and the drain region 3, which are divided into two parts, are formed and heat treated, and an oxide film 23 is formed in the remaining Si film 16 so as to bury the parts. At the same time, the regions 2 and 3 which are divided by the heat treatment is incorporated to form a unitary body.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56103073A JPS57141968A (en) | 1981-07-01 | 1981-07-01 | Insulated gate type field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56103073A JPS57141968A (en) | 1981-07-01 | 1981-07-01 | Insulated gate type field effect transistor |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP47010360A Division JPS58190B2 (en) | 1972-01-27 | 1972-01-27 | Transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57141968A true JPS57141968A (en) | 1982-09-02 |
JPS6118350B2 JPS6118350B2 (en) | 1986-05-12 |
Family
ID=14344468
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56103073A Granted JPS57141968A (en) | 1981-07-01 | 1981-07-01 | Insulated gate type field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57141968A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6161466A (en) * | 1984-09-03 | 1986-03-29 | Fujitsu Ltd | Manufacturing method for semiconductor devices |
US6323524B1 (en) * | 1997-05-20 | 2001-11-27 | Advanced Micro Devices, Inc. | Semiconductor device having a vertical active region and method of manufacture thereof |
-
1981
- 1981-07-01 JP JP56103073A patent/JPS57141968A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6161466A (en) * | 1984-09-03 | 1986-03-29 | Fujitsu Ltd | Manufacturing method for semiconductor devices |
US6323524B1 (en) * | 1997-05-20 | 2001-11-27 | Advanced Micro Devices, Inc. | Semiconductor device having a vertical active region and method of manufacture thereof |
Also Published As
Publication number | Publication date |
---|---|
JPS6118350B2 (en) | 1986-05-12 |
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