JPS5380986A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5380986A JPS5380986A JP15705576A JP15705576A JPS5380986A JP S5380986 A JPS5380986 A JP S5380986A JP 15705576 A JP15705576 A JP 15705576A JP 15705576 A JP15705576 A JP 15705576A JP S5380986 A JPS5380986 A JP S5380986A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- film
- temperature
- theiinsulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To obtain a MOSFET featuring a high stability and a high reliability, by forming a gate electrode of high fusing point Mo silicide onto the gate insulator film with a phosphorus diffusion layer formed under a high temperature and then covering theiinsulator film with an opening drilled through a high-temperature treatment.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15705576A JPS5380986A (en) | 1976-12-25 | 1976-12-25 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15705576A JPS5380986A (en) | 1976-12-25 | 1976-12-25 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5380986A true JPS5380986A (en) | 1978-07-17 |
JPS5744016B2 JPS5744016B2 (en) | 1982-09-18 |
Family
ID=15641210
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15705576A Granted JPS5380986A (en) | 1976-12-25 | 1976-12-25 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5380986A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5546534A (en) * | 1978-09-28 | 1980-04-01 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Method of manufacturing semiconductor device |
JPS5650570A (en) * | 1979-10-01 | 1981-05-07 | Hitachi Ltd | Manufacture of semiconductor device |
JPS5779663A (en) * | 1980-11-05 | 1982-05-18 | Fujitsu Ltd | Semiconductor device |
DE3141195A1 (en) * | 1980-11-07 | 1982-06-24 | Hitachi, Ltd., Tokyo | INTEGRATED SEMICONDUCTOR CIRCUIT AND METHOD FOR THEIR PRODUCTION |
JPS59121855A (en) * | 1982-12-15 | 1984-07-14 | Fujitsu Ltd | Semiconductor device |
-
1976
- 1976-12-25 JP JP15705576A patent/JPS5380986A/en active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5546534A (en) * | 1978-09-28 | 1980-04-01 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Method of manufacturing semiconductor device |
JPS5650570A (en) * | 1979-10-01 | 1981-05-07 | Hitachi Ltd | Manufacture of semiconductor device |
JPS5779663A (en) * | 1980-11-05 | 1982-05-18 | Fujitsu Ltd | Semiconductor device |
JPS6044823B2 (en) * | 1980-11-05 | 1985-10-05 | 富士通株式会社 | Manufacturing method of semiconductor device |
DE3141195A1 (en) * | 1980-11-07 | 1982-06-24 | Hitachi, Ltd., Tokyo | INTEGRATED SEMICONDUCTOR CIRCUIT AND METHOD FOR THEIR PRODUCTION |
JPS59121855A (en) * | 1982-12-15 | 1984-07-14 | Fujitsu Ltd | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5744016B2 (en) | 1982-09-18 |
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