JPS5380986A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5380986A
JPS5380986A JP15705576A JP15705576A JPS5380986A JP S5380986 A JPS5380986 A JP S5380986A JP 15705576 A JP15705576 A JP 15705576A JP 15705576 A JP15705576 A JP 15705576A JP S5380986 A JPS5380986 A JP S5380986A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
film
temperature
theiinsulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15705576A
Other languages
Japanese (ja)
Other versions
JPS5744016B2 (en
Inventor
Toru Mochizuki
Kenji Shibata
Tomoyasu Inoue
Katsuo Koike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15705576A priority Critical patent/JPS5380986A/en
Publication of JPS5380986A publication Critical patent/JPS5380986A/en
Publication of JPS5744016B2 publication Critical patent/JPS5744016B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a MOSFET featuring a high stability and a high reliability, by forming a gate electrode of high fusing point Mo silicide onto the gate insulator film with a phosphorus diffusion layer formed under a high temperature and then covering theiinsulator film with an opening drilled through a high-temperature treatment.
COPYRIGHT: (C)1978,JPO&Japio
JP15705576A 1976-12-25 1976-12-25 Manufacture of semiconductor device Granted JPS5380986A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15705576A JPS5380986A (en) 1976-12-25 1976-12-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15705576A JPS5380986A (en) 1976-12-25 1976-12-25 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5380986A true JPS5380986A (en) 1978-07-17
JPS5744016B2 JPS5744016B2 (en) 1982-09-18

Family

ID=15641210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15705576A Granted JPS5380986A (en) 1976-12-25 1976-12-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5380986A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5546534A (en) * 1978-09-28 1980-04-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of manufacturing semiconductor device
JPS5650570A (en) * 1979-10-01 1981-05-07 Hitachi Ltd Manufacture of semiconductor device
JPS5779663A (en) * 1980-11-05 1982-05-18 Fujitsu Ltd Semiconductor device
DE3141195A1 (en) * 1980-11-07 1982-06-24 Hitachi, Ltd., Tokyo INTEGRATED SEMICONDUCTOR CIRCUIT AND METHOD FOR THEIR PRODUCTION
JPS59121855A (en) * 1982-12-15 1984-07-14 Fujitsu Ltd Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5546534A (en) * 1978-09-28 1980-04-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of manufacturing semiconductor device
JPS5650570A (en) * 1979-10-01 1981-05-07 Hitachi Ltd Manufacture of semiconductor device
JPS5779663A (en) * 1980-11-05 1982-05-18 Fujitsu Ltd Semiconductor device
JPS6044823B2 (en) * 1980-11-05 1985-10-05 富士通株式会社 Manufacturing method of semiconductor device
DE3141195A1 (en) * 1980-11-07 1982-06-24 Hitachi, Ltd., Tokyo INTEGRATED SEMICONDUCTOR CIRCUIT AND METHOD FOR THEIR PRODUCTION
JPS59121855A (en) * 1982-12-15 1984-07-14 Fujitsu Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS5744016B2 (en) 1982-09-18

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