JPS55141754A - Semiconductor element - Google Patents
Semiconductor elementInfo
- Publication number
- JPS55141754A JPS55141754A JP4932779A JP4932779A JPS55141754A JP S55141754 A JPS55141754 A JP S55141754A JP 4932779 A JP4932779 A JP 4932779A JP 4932779 A JP4932779 A JP 4932779A JP S55141754 A JPS55141754 A JP S55141754A
- Authority
- JP
- Japan
- Prior art keywords
- film
- stepwise
- metallic
- substrate
- mesa type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 230000002093 peripheral effect Effects 0.000 abstract 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To prevent the contact between a semiconductor substrate and a metallic electrode in a semiconductor element by forming a stepwise portion on the peripheral edge on the top of the substrate formed in mesa type and then forming an insulating film, metallic film and metallic electrode on the stepwise and flat top portions. CONSTITUTION:The surface of a semiconductor substrate 1 is formed in mesa type, and a small stepwise portion is formed on the peripheral edge on the mesa type top thereof. Then, an insulating film 2 is coated on the stepwise and flat top portions, and single or multilayer metallic films 3 are coated on the substrate 1 in the central opening of the film 2 and the film 2 at the periphery of the opening thereof. Then, a metallic electrode having substantially the same size as the flat top portion and thicker than the film 3 such as, for example, a silver electrode 4 is formed on the film 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4932779A JPS55141754A (en) | 1979-04-20 | 1979-04-20 | Semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4932779A JPS55141754A (en) | 1979-04-20 | 1979-04-20 | Semiconductor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55141754A true JPS55141754A (en) | 1980-11-05 |
| JPS6226592B2 JPS6226592B2 (en) | 1987-06-09 |
Family
ID=12827881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4932779A Granted JPS55141754A (en) | 1979-04-20 | 1979-04-20 | Semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55141754A (en) |
-
1979
- 1979-04-20 JP JP4932779A patent/JPS55141754A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6226592B2 (en) | 1987-06-09 |
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