JPS556866A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS556866A
JPS556866A JP7953378A JP7953378A JPS556866A JP S556866 A JPS556866 A JP S556866A JP 7953378 A JP7953378 A JP 7953378A JP 7953378 A JP7953378 A JP 7953378A JP S556866 A JPS556866 A JP S556866A
Authority
JP
Japan
Prior art keywords
portions
capacity
silicon dioxide
dioxide films
thick silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7953378A
Other languages
Japanese (ja)
Inventor
Mitsuru Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7953378A priority Critical patent/JPS556866A/en
Publication of JPS556866A publication Critical patent/JPS556866A/en
Pending legal-status Critical Current

Links

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  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To integrate an integrated circuit necessary for making up a number of capacity portions to a high degree, and to enlarge the capacity of the integrated circuit, by forming capacity portions so as to cover the upper surfaces of thick silicon dioxide films or other circuit elements.
CONSTITUTION: Thick silicon dioxide films 12 are partially built up on a surface of a P type silicon substrate 11, N type silicon ranges 13 are formed on portions where the thick silicon dioxide films 12 are not made up and insulators 15 and metallic matter 16 are built up. Thus, capacity portions are constituted which pure metal 14 and the metallic matter 16 form pair electrodes and the insulators 15 function as dielectric matter.
COPYRIGHT: (C)1980,JPO&Japio
JP7953378A 1978-06-29 1978-06-29 Semiconductor device Pending JPS556866A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7953378A JPS556866A (en) 1978-06-29 1978-06-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7953378A JPS556866A (en) 1978-06-29 1978-06-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS556866A true JPS556866A (en) 1980-01-18

Family

ID=13692623

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7953378A Pending JPS556866A (en) 1978-06-29 1978-06-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS556866A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58215067A (en) * 1982-06-08 1983-12-14 Nec Corp Semiconductor integrated circuit device
JPS6377165A (en) * 1986-09-19 1988-04-07 Mitsubishi Electric Corp Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52114285A (en) * 1976-03-22 1977-09-24 Hitachi Ltd Mis type semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52114285A (en) * 1976-03-22 1977-09-24 Hitachi Ltd Mis type semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58215067A (en) * 1982-06-08 1983-12-14 Nec Corp Semiconductor integrated circuit device
JPH0328828B2 (en) * 1982-06-08 1991-04-22 Nippon Electric Co
JPS6377165A (en) * 1986-09-19 1988-04-07 Mitsubishi Electric Corp Semiconductor device

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