JPS6435933A - Manufacture of multilayer interconnection semiconductor device - Google Patents

Manufacture of multilayer interconnection semiconductor device

Info

Publication number
JPS6435933A
JPS6435933A JP19176887A JP19176887A JPS6435933A JP S6435933 A JPS6435933 A JP S6435933A JP 19176887 A JP19176887 A JP 19176887A JP 19176887 A JP19176887 A JP 19176887A JP S6435933 A JPS6435933 A JP S6435933A
Authority
JP
Japan
Prior art keywords
film
insulating film
electrode wiring
adhered
protrusion part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19176887A
Other languages
Japanese (ja)
Inventor
Tadashi Nishigori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP19176887A priority Critical patent/JPS6435933A/en
Publication of JPS6435933A publication Critical patent/JPS6435933A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To form an upper electrode wiring having no possibility of the cutting at stepped parts and a local increase in resistance by a method wherein, after a lower electrode wiring having a conductive protrusion part is formed, an insulating film is adhered and an etchback is performed to form a flat interlayer insulating film including contact hole parts as well. CONSTITUTION:A conducting film 11 is adhered on an Si substrate 1 and thereafter, after the film 11 is patterned into a prescribed form, an electrode wiring is formed to form a lower electrode wiring (a first layer Al wiring) 8 provided with a conductive protrusion part 14 and after an insulating film and a resist film are adhered, an etchback is performed to form a second interlayer insulating film 9' having contact holes 6 and 7 filled with the protrusion part 14. Thereby, as the surface of the film 9' is flattened by the etchback process, a problem of a step coverage is not generated and a very good contact can be made.
JP19176887A 1987-07-30 1987-07-30 Manufacture of multilayer interconnection semiconductor device Pending JPS6435933A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19176887A JPS6435933A (en) 1987-07-30 1987-07-30 Manufacture of multilayer interconnection semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19176887A JPS6435933A (en) 1987-07-30 1987-07-30 Manufacture of multilayer interconnection semiconductor device

Publications (1)

Publication Number Publication Date
JPS6435933A true JPS6435933A (en) 1989-02-07

Family

ID=16280194

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19176887A Pending JPS6435933A (en) 1987-07-30 1987-07-30 Manufacture of multilayer interconnection semiconductor device

Country Status (1)

Country Link
JP (1) JPS6435933A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006021756A (en) * 2004-07-07 2006-01-26 Cwa Constructions Sa Aerial cable cabin

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006021756A (en) * 2004-07-07 2006-01-26 Cwa Constructions Sa Aerial cable cabin

Similar Documents

Publication Publication Date Title
EP0238282A3 (en) Hybrid ic device and method for manufacturing same
EP0310108A3 (en) Interconnection structure of a semiconductor device and method of manufacturing the same
JPS6450443A (en) Semiconductor device
KR960004095B1 (en) Manufacturing method of metal plug in contact-hole
EP0177105A3 (en) Method for providing a semiconductor device with planarized contacts
EP0218437A3 (en) A microelectronics apparatus and method of interconnecting wiring planes
EP0406025A3 (en) Method for fabricating a semiconductor device in which an insulating layer thereof has a uniform thickness
JPS6435933A (en) Manufacture of multilayer interconnection semiconductor device
TW346658B (en) Method for manufacturing capacitor for semiconductor device
TW353217B (en) Method of producing semiconductor device having a multi-layer wiring structure
EP0347792A3 (en) Multi-layer wirings on a semiconductor device and fabrication method
JPS6420640A (en) Semiconductor device and manufacture thereof
JPS55113344A (en) Electrode wiring and its manufacture
JPS6425551A (en) Semiconductor device
JPS6484735A (en) Manufacture of semiconductor device
JPS6437037A (en) Manufacture of semiconductor device
JPS6484722A (en) Manufacture of semiconductor device
WO1995028000A3 (en) Method of manufacturing a semiconductor device with a multilayer wiring structure containing narrow vias
JPS5789239A (en) Semiconductor integrated circuit
JPS57166048A (en) Semiconductor integrated circuit
TW370716B (en) Structure and method for manufacturing interconnects
JPS6482548A (en) Formation of interconnection pattern
JPS5797649A (en) Manufacture of semiconductor device
JPS6445141A (en) Manufacture of semiconductor device
JPS6450444A (en) Manufacture of semiconductor device