JPS6450444A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6450444A JPS6450444A JP62206265A JP20626587A JPS6450444A JP S6450444 A JPS6450444 A JP S6450444A JP 62206265 A JP62206265 A JP 62206265A JP 20626587 A JP20626587 A JP 20626587A JP S6450444 A JPS6450444 A JP S6450444A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- semiconductor device
- opening
- semiconductor
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To plan a highly integrated circuit by providing an opening in the diffused layer area of a semiconductor device, drilling an insulating film directly under a diffused layer opening and burying a wiring substance between layers after the semiconductor device on the insulating film. CONSTITUTION:A second hole connected to the diffused area 2 of a semiconductor device formed under an insulting film 6 is provided in the insulating film 6 directly under a first opening with providing a first opening in a part of the diffused area 7 composed of a high concentration impurity which forms the semiconductor device shaped in a single crystal semiconductor film on an insulating film 6. And a wiring substance 5 between the layers of small electric resistance 5 is buried in the first and the second opening. The substance 5 of the small electric resistance is a metal or a semiconductor in which sheet resistance is 50OMEGA or less. Thus, when the wiring between semiconductor devices layered through the insulating film 6 is formed, the bad influence for shaping a semiconductor film in which the semiconductor device on the insulating film 6 is formed can be reduced. Therefore, a highly integrated circuit an be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62206265A JPS6450444A (en) | 1987-08-21 | 1987-08-21 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62206265A JPS6450444A (en) | 1987-08-21 | 1987-08-21 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6450444A true JPS6450444A (en) | 1989-02-27 |
Family
ID=16520466
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62206265A Pending JPS6450444A (en) | 1987-08-21 | 1987-08-21 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6450444A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8008667B2 (en) | 2007-07-11 | 2011-08-30 | Mitsubishi Electric Corporation | Semiconductor device including a transparent semiconductor layer for viewing an underlying transistor in a semiconductor substrate |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61129852A (en) * | 1984-11-28 | 1986-06-17 | Seiko Epson Corp | Semiconductor device |
JPS62134922A (en) * | 1985-12-09 | 1987-06-18 | Toshiba Corp | Manufacture of semiconductor device |
JPS62203359A (en) * | 1986-03-03 | 1987-09-08 | Mitsubishi Electric Corp | Laminated semiconductor device |
-
1987
- 1987-08-21 JP JP62206265A patent/JPS6450444A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61129852A (en) * | 1984-11-28 | 1986-06-17 | Seiko Epson Corp | Semiconductor device |
JPS62134922A (en) * | 1985-12-09 | 1987-06-18 | Toshiba Corp | Manufacture of semiconductor device |
JPS62203359A (en) * | 1986-03-03 | 1987-09-08 | Mitsubishi Electric Corp | Laminated semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8008667B2 (en) | 2007-07-11 | 2011-08-30 | Mitsubishi Electric Corporation | Semiconductor device including a transparent semiconductor layer for viewing an underlying transistor in a semiconductor substrate |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6450443A (en) | Semiconductor device | |
JPS5756958A (en) | Semiconductor device | |
JPS6450444A (en) | Manufacture of semiconductor device | |
JPS6417446A (en) | Semiconductor device and manufacture thereof | |
JPS6445120A (en) | Semiconductor device | |
JPS57166048A (en) | Semiconductor integrated circuit | |
JPS56165320A (en) | Formation of multilayer electrodes of semiconductor device | |
JPS57201050A (en) | Multilayer wiring structure | |
JPS5732655A (en) | Semiconductor integrated circuit device | |
JPS57132341A (en) | Multilayer wiring structure in semiconductor device | |
JPS57181142A (en) | Manufacture of semiconductor device | |
EP0228183A3 (en) | Method for manufacturing semiconductor device | |
JPS5615052A (en) | Semiconductor device with multilayer wiring | |
JPS6450568A (en) | Semiconductor device | |
JPS6435933A (en) | Manufacture of multilayer interconnection semiconductor device | |
JPS57206049A (en) | Manufacture of semiconductor device | |
JPS6433971A (en) | Thin film transistor | |
JPS5271994A (en) | Semiconductor integrated circuit device | |
JPS6415955A (en) | Semiconductor integrated circuit device | |
JPS6419759A (en) | Semiconductor integrated circuit | |
JPS6437037A (en) | Manufacture of semiconductor device | |
JPS55130145A (en) | Semiconductor integrated circuit device | |
JPS5749254A (en) | Semiconductor device | |
JPS56118378A (en) | Semiconductor device | |
JPS6489334A (en) | Semiconductor integrated circuit device |