JPS6450444A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6450444A
JPS6450444A JP62206265A JP20626587A JPS6450444A JP S6450444 A JPS6450444 A JP S6450444A JP 62206265 A JP62206265 A JP 62206265A JP 20626587 A JP20626587 A JP 20626587A JP S6450444 A JPS6450444 A JP S6450444A
Authority
JP
Japan
Prior art keywords
insulating film
semiconductor device
opening
semiconductor
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62206265A
Other languages
Japanese (ja)
Inventor
Minoru Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP62206265A priority Critical patent/JPS6450444A/en
Publication of JPS6450444A publication Critical patent/JPS6450444A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To plan a highly integrated circuit by providing an opening in the diffused layer area of a semiconductor device, drilling an insulating film directly under a diffused layer opening and burying a wiring substance between layers after the semiconductor device on the insulating film. CONSTITUTION:A second hole connected to the diffused area 2 of a semiconductor device formed under an insulting film 6 is provided in the insulating film 6 directly under a first opening with providing a first opening in a part of the diffused area 7 composed of a high concentration impurity which forms the semiconductor device shaped in a single crystal semiconductor film on an insulating film 6. And a wiring substance 5 between the layers of small electric resistance 5 is buried in the first and the second opening. The substance 5 of the small electric resistance is a metal or a semiconductor in which sheet resistance is 50OMEGA or less. Thus, when the wiring between semiconductor devices layered through the insulating film 6 is formed, the bad influence for shaping a semiconductor film in which the semiconductor device on the insulating film 6 is formed can be reduced. Therefore, a highly integrated circuit an be obtained.
JP62206265A 1987-08-21 1987-08-21 Manufacture of semiconductor device Pending JPS6450444A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62206265A JPS6450444A (en) 1987-08-21 1987-08-21 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62206265A JPS6450444A (en) 1987-08-21 1987-08-21 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6450444A true JPS6450444A (en) 1989-02-27

Family

ID=16520466

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62206265A Pending JPS6450444A (en) 1987-08-21 1987-08-21 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6450444A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8008667B2 (en) 2007-07-11 2011-08-30 Mitsubishi Electric Corporation Semiconductor device including a transparent semiconductor layer for viewing an underlying transistor in a semiconductor substrate

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61129852A (en) * 1984-11-28 1986-06-17 Seiko Epson Corp Semiconductor device
JPS62134922A (en) * 1985-12-09 1987-06-18 Toshiba Corp Manufacture of semiconductor device
JPS62203359A (en) * 1986-03-03 1987-09-08 Mitsubishi Electric Corp Laminated semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61129852A (en) * 1984-11-28 1986-06-17 Seiko Epson Corp Semiconductor device
JPS62134922A (en) * 1985-12-09 1987-06-18 Toshiba Corp Manufacture of semiconductor device
JPS62203359A (en) * 1986-03-03 1987-09-08 Mitsubishi Electric Corp Laminated semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8008667B2 (en) 2007-07-11 2011-08-30 Mitsubishi Electric Corporation Semiconductor device including a transparent semiconductor layer for viewing an underlying transistor in a semiconductor substrate

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