JPS6437037A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6437037A
JPS6437037A JP19395687A JP19395687A JPS6437037A JP S6437037 A JPS6437037 A JP S6437037A JP 19395687 A JP19395687 A JP 19395687A JP 19395687 A JP19395687 A JP 19395687A JP S6437037 A JPS6437037 A JP S6437037A
Authority
JP
Japan
Prior art keywords
contact hole
conductive layer
silicide film
film
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19395687A
Other languages
Japanese (ja)
Inventor
Toshihiro Inada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP19395687A priority Critical patent/JPS6437037A/en
Publication of JPS6437037A publication Critical patent/JPS6437037A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent an upper conductive layer from disconnection at a contact hole by a method wherein the contact hole is filled with silicide film. CONSTITUTION:An interlayer insulating film 2 is formed on a lower conductive layer 1. A contact hole 2a is provided to expose a part of the lower conductive layer 1, with a photoresist film serving as a mask. A silicide film 4 is then formed on the interlayer insulating film 2 and on the hole-provided lower conductive layer 1. A process follows wherein a photoresist 5 is applied to the silicide film 4, and then the photoresist 5 and the silicide film 4 are removed, with a portion of the silicide film 4 retained in the contact hole 2a. An upper conducting wire 6 is formed flat on the flattened surface of the interlayer insulating film 2. This design prevents disconnection involving the contact hole 2a.
JP19395687A 1987-08-03 1987-08-03 Manufacture of semiconductor device Pending JPS6437037A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19395687A JPS6437037A (en) 1987-08-03 1987-08-03 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19395687A JPS6437037A (en) 1987-08-03 1987-08-03 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6437037A true JPS6437037A (en) 1989-02-07

Family

ID=16316554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19395687A Pending JPS6437037A (en) 1987-08-03 1987-08-03 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6437037A (en)

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