JPS6480076A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6480076A JPS6480076A JP23682487A JP23682487A JPS6480076A JP S6480076 A JPS6480076 A JP S6480076A JP 23682487 A JP23682487 A JP 23682487A JP 23682487 A JP23682487 A JP 23682487A JP S6480076 A JPS6480076 A JP S6480076A
- Authority
- JP
- Japan
- Prior art keywords
- film
- deposited
- drain regions
- substrate
- intermediate insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
PURPOSE:To avoid the breakdown of basic structure of element by a method wherein a sidewall film and an intermediate insulating film respectively made of materials different in the etching selectivity are adopted. CONSTITUTION:An intermediate insulating film 28 is deposited on overall surface of a substrate 21; contact holes 29 are made in the film 28 on a low concentration doped region 24; and high concentration ion is implanted in the substrate 21 to form source.drain regions 30. Next, when the holes 29 meet with the sidewall film 27 in gate electrode 25 side, the film 27 is hardly etched away by properly selecting the selective etching ratio of the film 27 to the film 25 since the applicable material of the film 27 is different from that of the film 28 in the etching selectivity. Finally, after reflowing the ion implanted layers for rounding the shape of contact parts partly for the heat-treatment to activate the ion implanted layers, the wiring layers 30 are deposited and patterned to be connected to the source.drain regions 30 through the contact holes 28.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23682487A JPS6480076A (en) | 1987-09-21 | 1987-09-21 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23682487A JPS6480076A (en) | 1987-09-21 | 1987-09-21 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6480076A true JPS6480076A (en) | 1989-03-24 |
Family
ID=17006327
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23682487A Pending JPS6480076A (en) | 1987-09-21 | 1987-09-21 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6480076A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008514019A (en) * | 2004-09-21 | 2008-05-01 | フリースケール セミコンダクター インコーポレイテッド | Semiconductor device and method of forming the same |
-
1987
- 1987-09-21 JP JP23682487A patent/JPS6480076A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008514019A (en) * | 2004-09-21 | 2008-05-01 | フリースケール セミコンダクター インコーポレイテッド | Semiconductor device and method of forming the same |
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