JPS57117257A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57117257A
JPS57117257A JP338181A JP338181A JPS57117257A JP S57117257 A JPS57117257 A JP S57117257A JP 338181 A JP338181 A JP 338181A JP 338181 A JP338181 A JP 338181A JP S57117257 A JPS57117257 A JP S57117257A
Authority
JP
Japan
Prior art keywords
layer
crystal silicon
wiring
film
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP338181A
Other languages
Japanese (ja)
Inventor
Yoshitake Tsuruoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP338181A priority Critical patent/JPS57117257A/en
Publication of JPS57117257A publication Critical patent/JPS57117257A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To eliminate the necessity of making separate contact opening and connection by aluminum wiring, by providing a metal silicide layer in the border of silicon layers in making connection between wirings of different layers. CONSTITUTION:An oxide silicon film 2 is made by heat oxidation as the first interlayer insulation film on a single crystal silicon substrate. An N type multi crystal silicon oxide line layer 3 is formed by growing the multi crystal silicon film in the first layer doped with phosphor. A silicon oxide film 4 is grown over the layer 3 as a second interlayer insulation film. A contact hole is made at the place where the first layer wiring and the second layer wiring are connected. Pd is vapored over the entire surface of the substrate. A Pd2Si layer 6 is formed by the reaction of the poly crystal silicon and Pd at the contact hole. The second poly crystal silicon wiring layer 7 is grown in the second layer, doped with boron.
JP338181A 1981-01-13 1981-01-13 Semiconductor device Pending JPS57117257A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP338181A JPS57117257A (en) 1981-01-13 1981-01-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP338181A JPS57117257A (en) 1981-01-13 1981-01-13 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57117257A true JPS57117257A (en) 1982-07-21

Family

ID=11555768

Family Applications (1)

Application Number Title Priority Date Filing Date
JP338181A Pending JPS57117257A (en) 1981-01-13 1981-01-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57117257A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63124551A (en) * 1986-11-14 1988-05-28 Nec Corp Semiconductor integrated circuit device
JPS6425468A (en) * 1987-07-21 1989-01-27 Nec Corp Semiconductor device
JPH03166728A (en) * 1989-11-27 1991-07-18 Matsushita Electron Corp Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54123883A (en) * 1978-02-27 1979-09-26 Rca Corp Complementary mos device
JPS5635436A (en) * 1979-08-31 1981-04-08 Toshiba Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54123883A (en) * 1978-02-27 1979-09-26 Rca Corp Complementary mos device
JPS5635436A (en) * 1979-08-31 1981-04-08 Toshiba Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63124551A (en) * 1986-11-14 1988-05-28 Nec Corp Semiconductor integrated circuit device
JPS6425468A (en) * 1987-07-21 1989-01-27 Nec Corp Semiconductor device
JPH03166728A (en) * 1989-11-27 1991-07-18 Matsushita Electron Corp Semiconductor device

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