JPS57117257A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57117257A JPS57117257A JP338181A JP338181A JPS57117257A JP S57117257 A JPS57117257 A JP S57117257A JP 338181 A JP338181 A JP 338181A JP 338181 A JP338181 A JP 338181A JP S57117257 A JPS57117257 A JP S57117257A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- crystal silicon
- wiring
- film
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To eliminate the necessity of making separate contact opening and connection by aluminum wiring, by providing a metal silicide layer in the border of silicon layers in making connection between wirings of different layers. CONSTITUTION:An oxide silicon film 2 is made by heat oxidation as the first interlayer insulation film on a single crystal silicon substrate. An N type multi crystal silicon oxide line layer 3 is formed by growing the multi crystal silicon film in the first layer doped with phosphor. A silicon oxide film 4 is grown over the layer 3 as a second interlayer insulation film. A contact hole is made at the place where the first layer wiring and the second layer wiring are connected. Pd is vapored over the entire surface of the substrate. A Pd2Si layer 6 is formed by the reaction of the poly crystal silicon and Pd at the contact hole. The second poly crystal silicon wiring layer 7 is grown in the second layer, doped with boron.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP338181A JPS57117257A (en) | 1981-01-13 | 1981-01-13 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP338181A JPS57117257A (en) | 1981-01-13 | 1981-01-13 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57117257A true JPS57117257A (en) | 1982-07-21 |
Family
ID=11555768
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP338181A Pending JPS57117257A (en) | 1981-01-13 | 1981-01-13 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57117257A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63124551A (en) * | 1986-11-14 | 1988-05-28 | Nec Corp | Semiconductor integrated circuit device |
JPS6425468A (en) * | 1987-07-21 | 1989-01-27 | Nec Corp | Semiconductor device |
JPH03166728A (en) * | 1989-11-27 | 1991-07-18 | Matsushita Electron Corp | Semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54123883A (en) * | 1978-02-27 | 1979-09-26 | Rca Corp | Complementary mos device |
JPS5635436A (en) * | 1979-08-31 | 1981-04-08 | Toshiba Corp | Semiconductor device |
-
1981
- 1981-01-13 JP JP338181A patent/JPS57117257A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54123883A (en) * | 1978-02-27 | 1979-09-26 | Rca Corp | Complementary mos device |
JPS5635436A (en) * | 1979-08-31 | 1981-04-08 | Toshiba Corp | Semiconductor device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63124551A (en) * | 1986-11-14 | 1988-05-28 | Nec Corp | Semiconductor integrated circuit device |
JPS6425468A (en) * | 1987-07-21 | 1989-01-27 | Nec Corp | Semiconductor device |
JPH03166728A (en) * | 1989-11-27 | 1991-07-18 | Matsushita Electron Corp | Semiconductor device |
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