JPS6425468A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6425468A JPS6425468A JP62182743A JP18274387A JPS6425468A JP S6425468 A JPS6425468 A JP S6425468A JP 62182743 A JP62182743 A JP 62182743A JP 18274387 A JP18274387 A JP 18274387A JP S6425468 A JPS6425468 A JP S6425468A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- region
- layer
- contact
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 239000004020 conductor Substances 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 230000002457 bidirectional effect Effects 0.000 abstract 1
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To simplify the design of wirings by bringing a polycrystalline silicon layer into contact with a thin silicon film through a fine region, and performing bidirectional conduction through a conductor layer. CONSTITUTION:An N-type region 1 on a single crystalline silicon substrate 115 is connected through the opening 11 of a silicon oxide film 10 to an N-type polycrystalline silicon 5. Then, a thin P-type silicon film 3 is brought into contact with the upper face of the silicon 5. In this case, a conductor layer 9 is provided directly on a contact region to conduct in bidirections. Thus, the contact region of the silicon 5 with the film 3 may be extremely small, and the region of the layer 9 may be minimum in manufacturing process. Further, since the layer 9 can provide sufficient effect even with a reduced thickness, it is easy to form an insulating layer 12 on the top, and other wirings may be provided freely on the top of the region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62182743A JPH0750746B2 (en) | 1987-07-21 | 1987-07-21 | Memory cell for complementary MOS static RAM |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62182743A JPH0750746B2 (en) | 1987-07-21 | 1987-07-21 | Memory cell for complementary MOS static RAM |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6425468A true JPS6425468A (en) | 1989-01-27 |
| JPH0750746B2 JPH0750746B2 (en) | 1995-05-31 |
Family
ID=16123659
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62182743A Expired - Lifetime JPH0750746B2 (en) | 1987-07-21 | 1987-07-21 | Memory cell for complementary MOS static RAM |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0750746B2 (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57117257A (en) * | 1981-01-13 | 1982-07-21 | Nec Corp | Semiconductor device |
| JPS58206139A (en) * | 1982-05-26 | 1983-12-01 | Nec Corp | Semiconductor integrated circuit |
| JPS5935450A (en) * | 1982-08-23 | 1984-02-27 | Nec Corp | Semiconductor device |
| JPS6031242A (en) * | 1983-07-30 | 1985-02-18 | Mitsubishi Electric Corp | Semiconductor device |
| JPS61271826A (en) * | 1985-05-27 | 1986-12-02 | Nec Corp | Manufacture of semiconductor device |
-
1987
- 1987-07-21 JP JP62182743A patent/JPH0750746B2/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57117257A (en) * | 1981-01-13 | 1982-07-21 | Nec Corp | Semiconductor device |
| JPS58206139A (en) * | 1982-05-26 | 1983-12-01 | Nec Corp | Semiconductor integrated circuit |
| JPS5935450A (en) * | 1982-08-23 | 1984-02-27 | Nec Corp | Semiconductor device |
| JPS6031242A (en) * | 1983-07-30 | 1985-02-18 | Mitsubishi Electric Corp | Semiconductor device |
| JPS61271826A (en) * | 1985-05-27 | 1986-12-02 | Nec Corp | Manufacture of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0750746B2 (en) | 1995-05-31 |
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