JPS5516467A - Method of patterning of insulating inorganic film - Google Patents
Method of patterning of insulating inorganic filmInfo
- Publication number
- JPS5516467A JPS5516467A JP8957478A JP8957478A JPS5516467A JP S5516467 A JPS5516467 A JP S5516467A JP 8957478 A JP8957478 A JP 8957478A JP 8957478 A JP8957478 A JP 8957478A JP S5516467 A JPS5516467 A JP S5516467A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode material
- opening
- photoresist
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To prevent deterioration of the electrode material by adopting such a production process having the steps of forming a first resist film of a predetermined pattern, forming an inorganic film over the entire surface, forming a second resist film and then effecting an etching on the inorganic film.
CONSTITUTION: An electrode material 3 is formed on a semiconductor substrate 1 coated with an insulating film 2 and a first photoresist film 6 is formed on the electrode material 3 and then patterned in such a manner that the photorresist film 6 remains on the area where the opening is to be formed. Then, the entire surface is coated by, for example, a silicon oxide film 4 which is then coated with a second photoresist film 5 such that the opening of the second photoresist film 5 is positioned in the area where the first resist film 6 remains. Then, the oxide film 4 is etched under the mask of the second photoresist film 5 to form an opening. Then, the first and the second photoresist films 6, 5 are removed by an immersion in a solvent. By so doing, the direct contact between the electrode material 3 and the oxide film 4 is avoided to prevent undesirable phenomenon such as degradation or dissolving of the electrode material 3 at the opening, remaining of the oxide film and so forth.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8957478A JPS5516467A (en) | 1978-07-21 | 1978-07-21 | Method of patterning of insulating inorganic film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8957478A JPS5516467A (en) | 1978-07-21 | 1978-07-21 | Method of patterning of insulating inorganic film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5516467A true JPS5516467A (en) | 1980-02-05 |
Family
ID=13974564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8957478A Pending JPS5516467A (en) | 1978-07-21 | 1978-07-21 | Method of patterning of insulating inorganic film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5516467A (en) |
-
1978
- 1978-07-21 JP JP8957478A patent/JPS5516467A/en active Pending
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