JPS56134733A - Production of semiconductor - Google Patents

Production of semiconductor

Info

Publication number
JPS56134733A
JPS56134733A JP3979180A JP3979180A JPS56134733A JP S56134733 A JPS56134733 A JP S56134733A JP 3979180 A JP3979180 A JP 3979180A JP 3979180 A JP3979180 A JP 3979180A JP S56134733 A JPS56134733 A JP S56134733A
Authority
JP
Japan
Prior art keywords
film
surrounding wall
contact hole
resist
insulator film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3979180A
Other languages
Japanese (ja)
Inventor
Kazuo Ito
Masahiko Denda
Natsuo Tsubouchi
Shinichi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3979180A priority Critical patent/JPS56134733A/en
Publication of JPS56134733A publication Critical patent/JPS56134733A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To prevent cracking and disconnection in a wiring conductive film by making the surrounding wall of a contact hole like a staircase. CONSTITUTION:An insulator film 3 is formed on the surface of an n type substrate 1 provided with a p type diffused film 2. Then, with a resist mask 5, the insulator film 3 on an n type region is selectively etched to form a concave section 8 at a depth 1/2 of the film thickness for instance. After removal of the resist 5, a resist mask 9 is formed with a surrounding wall for a window 4a inside the surrounding wall of the concave section 8 and the insulator film 3 is etched to form a contact hole 11. After the removal of the resist 7, a wiring conductive film 12 is formed and connected to the surface of the p type diffused layer 2. In this contact hole 11, the step on the surrounding wall represents a staircase at a height almost 1/2 of the thickness of the insulator film 3, preventing cracking and disconnection in the wiring conductive film 12.
JP3979180A 1980-03-25 1980-03-25 Production of semiconductor Pending JPS56134733A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3979180A JPS56134733A (en) 1980-03-25 1980-03-25 Production of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3979180A JPS56134733A (en) 1980-03-25 1980-03-25 Production of semiconductor

Publications (1)

Publication Number Publication Date
JPS56134733A true JPS56134733A (en) 1981-10-21

Family

ID=12562766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3979180A Pending JPS56134733A (en) 1980-03-25 1980-03-25 Production of semiconductor

Country Status (1)

Country Link
JP (1) JPS56134733A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011165799A (en) * 2010-02-08 2011-08-25 Showa Denko Kk Flip-chip light emitting diode and method for manufacturing the same, and light emitting diode lamp

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011165799A (en) * 2010-02-08 2011-08-25 Showa Denko Kk Flip-chip light emitting diode and method for manufacturing the same, and light emitting diode lamp

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