JPS6422045A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6422045A JPS6422045A JP17943587A JP17943587A JPS6422045A JP S6422045 A JPS6422045 A JP S6422045A JP 17943587 A JP17943587 A JP 17943587A JP 17943587 A JP17943587 A JP 17943587A JP S6422045 A JPS6422045 A JP S6422045A
- Authority
- JP
- Japan
- Prior art keywords
- film
- tungsten
- sio2
- cvd
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To facilitate the film generation causing no slits by performing the element isolation by removing a desired amount of the organic thin film, second insulating film and first insulating film, and forming a buried wiring. CONSTITUTION:After a groove is formed in the surface of an Si substrate 11, it is oxidized to form an SiO2 film 12 which is a first insulating film. Then, a tungsten film 13, a conductive film, is formed on the whole surface. After etching the tungsten film 13 to form a CVD-SiO2 film 14 which is a second insulating film, a resist film 15, an organic film, is formed, the surface of which is made flat and etched back. Thereafter, the CVD-SiO2 film is removed as necessary to make contact with the tungsten film 13, and the tungsten film 13 is used as a wiring. With this, the groove part is filled with the tungsten films 13, 23, 33, so that the ratio of the depth and the width becomes 1 or less, thereby enabling the film generation which causes no slits in the CVD-SiO2 films 14, 24, 34 to be formed later.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17943587A JPS6422045A (en) | 1987-07-17 | 1987-07-17 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17943587A JPS6422045A (en) | 1987-07-17 | 1987-07-17 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6422045A true JPS6422045A (en) | 1989-01-25 |
Family
ID=16065814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17943587A Pending JPS6422045A (en) | 1987-07-17 | 1987-07-17 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6422045A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0460861A2 (en) * | 1990-05-31 | 1991-12-11 | Canon Kabushiki Kaisha | Device separation structure and semiconductor device improved in wiring structure |
| JP2000031268A (en) * | 1998-06-29 | 2000-01-28 | Samsung Electron Co Ltd | Transistor minimized in narrow channel effect and forming method of transistor with electric field penetration shutoff film |
| JP2006080295A (en) * | 2004-09-09 | 2006-03-23 | Sony Corp | Manufacturing method of wiring board and of semiconductor module |
-
1987
- 1987-07-17 JP JP17943587A patent/JPS6422045A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0460861A2 (en) * | 1990-05-31 | 1991-12-11 | Canon Kabushiki Kaisha | Device separation structure and semiconductor device improved in wiring structure |
| JP2000031268A (en) * | 1998-06-29 | 2000-01-28 | Samsung Electron Co Ltd | Transistor minimized in narrow channel effect and forming method of transistor with electric field penetration shutoff film |
| JP2006080295A (en) * | 2004-09-09 | 2006-03-23 | Sony Corp | Manufacturing method of wiring board and of semiconductor module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR890015376A (en) | Electrical connection method for electronic device | |
| DE69034023D1 (en) | Method for producing a semiconductor device with a conductive layer | |
| JPS6467945A (en) | Wiring layer formed on buried dielectric and manufacture thereof | |
| JPS54589A (en) | Burying method of insulator | |
| JPS5791535A (en) | Manufacture of semiconductor device | |
| JPS6422045A (en) | Manufacture of semiconductor device | |
| JPS54108582A (en) | Manufacture of silicon type field effect transistor | |
| JPS57145340A (en) | Manufacture of semiconductor device | |
| JPS5763842A (en) | Preparation of semiconductor integrated circuit | |
| JPS5710936A (en) | Forming method for contact hole | |
| JPS57204146A (en) | Manufacture of semiconductor device | |
| JPS6484735A (en) | Manufacture of semiconductor device | |
| JPS572545A (en) | Manufacture of semiconductor device | |
| KR970053376A (en) | Device Separating Method of Semiconductor Device | |
| JPS5512775A (en) | Manufacturing method of semiconductor | |
| KR930024095A (en) | Manufacturing method of contact hole with improved profile | |
| JPS55105340A (en) | Semiconductor device and its manufacturing method | |
| JPS5687346A (en) | Manufacture of semiconductor device | |
| JPS5735340A (en) | Manufacture of semiconductor device | |
| JPS55130140A (en) | Fabricating method of semiconductor device | |
| JPS55154747A (en) | Manufacture of semiconductor integrated circuit device | |
| JPS53116787A (en) | Production of semiconductor device | |
| JPS649639A (en) | Manufacture of insulating film for element isolation of semiconductor device | |
| JPS57184232A (en) | Manufacture of semiconductor device | |
| JPS5379473A (en) | Manufacture of semiconductor device |