JPS5527661A - Method of manufacturing semiconductor device - Google Patents
Method of manufacturing semiconductor deviceInfo
- Publication number
- JPS5527661A JPS5527661A JP10108578A JP10108578A JPS5527661A JP S5527661 A JPS5527661 A JP S5527661A JP 10108578 A JP10108578 A JP 10108578A JP 10108578 A JP10108578 A JP 10108578A JP S5527661 A JPS5527661 A JP S5527661A
- Authority
- JP
- Japan
- Prior art keywords
- spacer
- semiconductor substrate
- insulator film
- film
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To prevent poor contact with a semiconductor substrate by covering the semiconductor substrate with the first spacer of an insulator film to protect the surface of the semiconductor substrate from being stained by sensitive resin films and developers.
CONSTITUTION: Impurity diffusion regions 13 are formed on a semiconductor substrate 11 on which an insulator film 12 with openings is formed, and on the substrate, the first spacer 14 of an insulator film whose etched speed is faster than that of the insulator film 12 is formed all over the surface. Further on the spacer, the second spacer 15 of an insulator film is formed by an ordinary photoetching method, and then the light sensitive resin film is removed. Next, the first spacer 14 is etched using the second spacer 15 as a mask, a conductive film 17 is formed all over, and an etching mask 18 is formed in a pattern inverse to the second spacer 15. Next, the exposed part of the conductive film 17 is etched, and removing the etching mask 18, a conductive film pattern 19 is formed.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10108578A JPS5527661A (en) | 1978-08-18 | 1978-08-18 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10108578A JPS5527661A (en) | 1978-08-18 | 1978-08-18 | Method of manufacturing semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5527661A true JPS5527661A (en) | 1980-02-27 |
JPS628941B2 JPS628941B2 (en) | 1987-02-25 |
Family
ID=14291251
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10108578A Granted JPS5527661A (en) | 1978-08-18 | 1978-08-18 | Method of manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5527661A (en) |
-
1978
- 1978-08-18 JP JP10108578A patent/JPS5527661A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS628941B2 (en) | 1987-02-25 |
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