JPS6414967A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6414967A JPS6414967A JP17149187A JP17149187A JPS6414967A JP S6414967 A JPS6414967 A JP S6414967A JP 17149187 A JP17149187 A JP 17149187A JP 17149187 A JP17149187 A JP 17149187A JP S6414967 A JPS6414967 A JP S6414967A
- Authority
- JP
- Japan
- Prior art keywords
- film
- irregularity
- mask
- interlayer insulating
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 230000004888 barrier function Effects 0.000 abstract 2
- 239000011229 interlayer Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To make it possible to simultaneously form a Schottky barrier diode, having excellent characteristics of rectification, with a low degree of irregularity in characteristics, together with a MOS transistor. CONSTITUTION:An interlayer insulating film 14 is formed on a substrate, and after a contact hole 15 has been formed, a polysilicon film 16 of 300-500Angstrom in thickness is formed on the whole surface of the substrate. Then, the film 16 alone on the region of the N-well 2', on which a Schottky barrier diode will be formed, is removed by conducting selective etching using a mask 24. Then, a refixed interlayer insulating film 14 is selectively removed using a mask 25, and an aperture part 26 is formed on a guard ring 22. Accordingly, as no film 16 is left on the interface of an aluminum Schottky electrode 21 and the N-well 2', the material is relatively alloyed uniform, the reverse- directioned leak current generated by a local breakdown due to field concentration can be reduced, and the abovementioned irregularity can also be reduced to a small value.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17149187A JPS6414967A (en) | 1987-07-08 | 1987-07-08 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17149187A JPS6414967A (en) | 1987-07-08 | 1987-07-08 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6414967A true JPS6414967A (en) | 1989-01-19 |
Family
ID=15924079
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17149187A Pending JPS6414967A (en) | 1987-07-08 | 1987-07-08 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6414967A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8018021B2 (en) | 2006-07-05 | 2011-09-13 | Samsung Electronics Co., Ltd. | Schottky diode and method of fabricating the same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5534447A (en) * | 1978-08-31 | 1980-03-11 | Fujitsu Ltd | Preparation of semicinductor device |
-
1987
- 1987-07-08 JP JP17149187A patent/JPS6414967A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5534447A (en) * | 1978-08-31 | 1980-03-11 | Fujitsu Ltd | Preparation of semicinductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8018021B2 (en) | 2006-07-05 | 2011-09-13 | Samsung Electronics Co., Ltd. | Schottky diode and method of fabricating the same |
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