SE7908485L - SETTING CLIFT SEMICONDUCTOR DIASON LASER PLATOR - Google Patents

SETTING CLIFT SEMICONDUCTOR DIASON LASER PLATOR

Info

Publication number
SE7908485L
SE7908485L SE7908485A SE7908485A SE7908485L SE 7908485 L SE7908485 L SE 7908485L SE 7908485 A SE7908485 A SE 7908485A SE 7908485 A SE7908485 A SE 7908485A SE 7908485 L SE7908485 L SE 7908485L
Authority
SE
Sweden
Prior art keywords
wafer
diason
plator
clift
laser
Prior art date
Application number
SE7908485A
Other languages
Unknown language ( )
Swedish (sv)
Inventor
G R Woolhouse
H A Huggins
S J Anderson
F R Scholl
Original Assignee
Exxon Research Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/951,064 external-priority patent/US4237601A/en
Priority claimed from US05/951,074 external-priority patent/US4236296A/en
Application filed by Exxon Research Engineering Co filed Critical Exxon Research Engineering Co
Publication of SE7908485L publication Critical patent/SE7908485L/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30617—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Dicing (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

A substrate 10 having epitaxial layers 11, 12, 13, 14 forming double heterostructure lasers is subdivided by anisotropically etching V-grooves 22 in the lower face of the substrate and then mechanically cleaving or breaking along lines 20. The resulting bars are scribed and broken along lines 23 to form individual laser diodes. When the wafer is 3 to 5 mils thick the V-grooves preferably extend to 1 to 2 mils less than thickness of the wafer. When the wafer is 6 to 10 mils thick preferably a parallel-sided channel is first formed followed by V-grooving. The method results in cleaved faces with little mechanical damage in the active area and produces diode lasers of uniform length. <IMAGE>
SE7908485A 1978-10-13 1979-10-12 SETTING CLIFT SEMICONDUCTOR DIASON LASER PLATOR SE7908485L (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/951,064 US4237601A (en) 1978-10-13 1978-10-13 Method of cleaving semiconductor diode laser wafers
US05/951,074 US4236296A (en) 1978-10-13 1978-10-13 Etch method of cleaving semiconductor diode laser wafers

Publications (1)

Publication Number Publication Date
SE7908485L true SE7908485L (en) 1980-04-14

Family

ID=27130309

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7908485A SE7908485L (en) 1978-10-13 1979-10-12 SETTING CLIFT SEMICONDUCTOR DIASON LASER PLATOR

Country Status (8)

Country Link
CA (1) CA1140661A (en)
DE (1) DE2941476A1 (en)
FR (1) FR2438914A1 (en)
GB (1) GB2035684B (en)
IL (1) IL58443A0 (en)
IT (1) IT1123839B (en)
NL (1) NL7907625A (en)
SE (1) SE7908485L (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041478B2 (en) * 1979-09-10 1985-09-17 富士通株式会社 Manufacturing method of semiconductor laser device
CA1201520A (en) * 1982-09-10 1986-03-04 Charles A. Burrus, Jr. Fabrication of cleaved semiconductor lasers
DE3435306A1 (en) * 1984-09-26 1986-04-03 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING LASER DIODES WITH JUTTED INTEGRATED HEAT SINK
JPH01280388A (en) * 1988-05-06 1989-11-10 Sharp Corp Manufacture of semiconductor element
DE3826736A1 (en) * 1988-08-05 1990-02-08 Siemens Ag METHOD FOR SEPARATING LED CHIP ARRANGEMENTS MONOLITHICALLY PRODUCED ON A SEMICONDUCTOR SUB Wafer
JPH07176827A (en) * 1993-08-20 1995-07-14 Mitsubishi Electric Corp Manufacture of semiconductor laser with modulator
US5418190A (en) * 1993-12-30 1995-05-23 At&T Corp. Method of fabrication for electro-optical devices
DE102017117136B4 (en) 2017-07-28 2022-09-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Method of manufacturing a plurality of laser diodes and laser diode

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3471923A (en) * 1966-12-09 1969-10-14 Rca Corp Method of making diode arrays

Also Published As

Publication number Publication date
FR2438914A1 (en) 1980-05-09
IT7926486A0 (en) 1979-10-12
CA1140661A (en) 1983-02-01
IT1123839B (en) 1986-04-30
GB2035684A (en) 1980-06-18
DE2941476A1 (en) 1980-04-24
NL7907625A (en) 1980-04-15
IL58443A0 (en) 1980-01-31
GB2035684B (en) 1983-08-03

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