IT7926486A0 - METHOD OF CUTTING SLIDES FOR SEMICONDUCTOR LASER DIODES. - Google Patents

METHOD OF CUTTING SLIDES FOR SEMICONDUCTOR LASER DIODES.

Info

Publication number
IT7926486A0
IT7926486A0 IT7926486A IT2648679A IT7926486A0 IT 7926486 A0 IT7926486 A0 IT 7926486A0 IT 7926486 A IT7926486 A IT 7926486A IT 2648679 A IT2648679 A IT 2648679A IT 7926486 A0 IT7926486 A0 IT 7926486A0
Authority
IT
Italy
Prior art keywords
semiconductor laser
laser diodes
cutting slides
slides
cutting
Prior art date
Application number
IT7926486A
Other languages
Italian (it)
Other versions
IT1123839B (en
Inventor
Stephen J Anderson
Geoffrey R Woolhouse
Frederick W Scholl
Harold A Huggins
David W Collins
Original Assignee
Exxon Research Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/951,074 external-priority patent/US4236296A/en
Priority claimed from US05/951,064 external-priority patent/US4237601A/en
Application filed by Exxon Research Engineering Co filed Critical Exxon Research Engineering Co
Publication of IT7926486A0 publication Critical patent/IT7926486A0/en
Application granted granted Critical
Publication of IT1123839B publication Critical patent/IT1123839B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30617—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Dicing (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
IT26486/79A 1978-10-13 1979-10-12 METAL CUTTING METHOD FOR SEMICONDUCTOR LASER DIODES IT1123839B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/951,074 US4236296A (en) 1978-10-13 1978-10-13 Etch method of cleaving semiconductor diode laser wafers
US05/951,064 US4237601A (en) 1978-10-13 1978-10-13 Method of cleaving semiconductor diode laser wafers

Publications (2)

Publication Number Publication Date
IT7926486A0 true IT7926486A0 (en) 1979-10-12
IT1123839B IT1123839B (en) 1986-04-30

Family

ID=27130309

Family Applications (1)

Application Number Title Priority Date Filing Date
IT26486/79A IT1123839B (en) 1978-10-13 1979-10-12 METAL CUTTING METHOD FOR SEMICONDUCTOR LASER DIODES

Country Status (8)

Country Link
CA (1) CA1140661A (en)
DE (1) DE2941476A1 (en)
FR (1) FR2438914A1 (en)
GB (1) GB2035684B (en)
IL (1) IL58443A0 (en)
IT (1) IT1123839B (en)
NL (1) NL7907625A (en)
SE (1) SE7908485L (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041478B2 (en) * 1979-09-10 1985-09-17 富士通株式会社 Manufacturing method of semiconductor laser device
CA1201520A (en) * 1982-09-10 1986-03-04 Charles A. Burrus, Jr. Fabrication of cleaved semiconductor lasers
DE3435306A1 (en) * 1984-09-26 1986-04-03 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING LASER DIODES WITH JUTTED INTEGRATED HEAT SINK
JPH01280388A (en) * 1988-05-06 1989-11-10 Sharp Corp Manufacture of semiconductor element
DE3826736A1 (en) * 1988-08-05 1990-02-08 Siemens Ag METHOD FOR SEPARATING LED CHIP ARRANGEMENTS MONOLITHICALLY PRODUCED ON A SEMICONDUCTOR SUB Wafer
JPH07176827A (en) * 1993-08-20 1995-07-14 Mitsubishi Electric Corp Manufacture of semiconductor laser with modulator
US5418190A (en) * 1993-12-30 1995-05-23 At&T Corp. Method of fabrication for electro-optical devices
DE102017117136B4 (en) * 2017-07-28 2022-09-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Method of manufacturing a plurality of laser diodes and laser diode

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3471923A (en) * 1966-12-09 1969-10-14 Rca Corp Method of making diode arrays

Also Published As

Publication number Publication date
GB2035684A (en) 1980-06-18
IT1123839B (en) 1986-04-30
FR2438914A1 (en) 1980-05-09
IL58443A0 (en) 1980-01-31
GB2035684B (en) 1983-08-03
SE7908485L (en) 1980-04-14
CA1140661A (en) 1983-02-01
DE2941476A1 (en) 1980-04-24
NL7907625A (en) 1980-04-15

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