FR2438914A1 - - Google Patents

Info

Publication number
FR2438914A1
FR2438914A1 FR7925411A FR7925411A FR2438914A1 FR 2438914 A1 FR2438914 A1 FR 2438914A1 FR 7925411 A FR7925411 A FR 7925411A FR 7925411 A FR7925411 A FR 7925411A FR 2438914 A1 FR2438914 A1 FR 2438914A1
Authority
FR
France
Prior art keywords
rules
substrate
tablet
produce
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR7925411A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ExxonMobil Technology and Engineering Co
Original Assignee
Exxon Research and Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/951,064 external-priority patent/US4237601A/en
Priority claimed from US05/951,074 external-priority patent/US4236296A/en
Application filed by Exxon Research and Engineering Co filed Critical Exxon Research and Engineering Co
Publication of FR2438914A1 publication Critical patent/FR2438914A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30617—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving

Abstract

PROCEDE DE FENDAGE D'UNE PASTILLE SEMI-CONDUCTRICE CONSISTANT EN UN SUBSTRAT 10 DONT AU MOINS UNE PARTIE DE LA SURFACE EST METALLISEE ET EN PLUSIEURS COUCHES SEMI-CONDUCTRICES 11 A 14 DEPOSEE SUR AU MOINS UNE PARTIE DE LA SURFACE OPPOSEE ET DONT AU MOINS L'UNE 12 EMET UNE RADIATION ELECTROMAGNETIQUE COHERENTE LORSQU'ELLE EST SOUS TENSION CONVENABLEMENT POLARISEE. LE PROCEDE CONSISTE A ATTAQUER LE SUBSTRAT PAR UN AGENT ANISOTROPIQUE DE MANIERE A FORMER DES GORGES EN V 22 DANS LA PASTILLE, PUIS A FENDRE MECANIQUEMENT LA PASTILLE LE LONG DE LIGNES 20 DE MANIERE A FORMER DES REGLETTES DE DIODES EN PRODUISANT AINSI DES FACETTES NE PRESENTANT PRATIQUEMENT AUCUNE MARQUE DE DETERIORATION LE LONG DU PLAN DE FENDAGE ET A PRODUIRE DES REGLETTES DE DIODES AYANT DES LARGEURS SENSIBLEMENT EGALES ENTRE FACETTES D'EMISSION LASER. APPLICATION A LA PRODUCTION DE DIODES ELECTROLUMINESCENTES A HETEROSTRUCTURE DOUBLE DE GAAS-(AL, GA)AS.PROCESS FOR SPLITTING A SEMI-CONDUCTIVE PELLET CONSISTING OF A SUBSTRATE 10 OF WHICH AT LEAST PART OF THE SURFACE IS METALLIZED AND IN SEVERAL SEMI-CONDUCTIVE LAYERS 11 TO 14 DEPOSITED ON AT LEAST PART OF THE OPPOSITE SURFACE AND OF WHICH AT LEAST L 'A 12 EMITS COHERENT ELECTROMAGNETIC RADIATION WHEN LIVE PROPERLY POLARIZED. THE PROCESS CONSISTS OF ATTACKING THE SUBSTRATE BY AN ANISOTROPIC AGENT SO AS TO FORM V-THROATS 22 IN THE TABLET, THEN IN MECHANICALLY CRACKING THE TABLET ALONG LINES 20 SO AS TO FORM DIODES RULES BY PRESETTING NOT TO PRODUCE THEN. PRACTICALLY NO MARKS OF DETERIORATION ALONG THE SPLITTING PLANE AND TO PRODUCE DIODE RULES HAVING SENSITIVELY EQUAL WIDTHS BETWEEN LASER EMISSION FACETS. APPLICATION TO THE PRODUCTION OF DOUBLE HETEROSTRUCTURED LIGHT DIODES FROM GAAS- (AL, GA) AS.

FR7925411A 1978-10-13 1979-10-12 Pending FR2438914A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/951,064 US4237601A (en) 1978-10-13 1978-10-13 Method of cleaving semiconductor diode laser wafers
US05/951,074 US4236296A (en) 1978-10-13 1978-10-13 Etch method of cleaving semiconductor diode laser wafers

Publications (1)

Publication Number Publication Date
FR2438914A1 true FR2438914A1 (en) 1980-05-09

Family

ID=27130309

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7925411A Pending FR2438914A1 (en) 1978-10-13 1979-10-12

Country Status (8)

Country Link
CA (1) CA1140661A (en)
DE (1) DE2941476A1 (en)
FR (1) FR2438914A1 (en)
GB (1) GB2035684B (en)
IL (1) IL58443A0 (en)
IT (1) IT1123839B (en)
NL (1) NL7907625A (en)
SE (1) SE7908485L (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0108475A2 (en) * 1982-09-10 1984-05-16 Western Electric Company, Incorporated Fabrication of cleaved semiconductor lasers
EP0341034A2 (en) * 1988-05-06 1989-11-08 Sharp Kabushiki Kaisha A method for the production of semiconductor devices
US4929300A (en) * 1988-08-05 1990-05-29 Siemens Aktiengesellschaft Process for the separation of monolithic LED chip arrangements generated on a semiconductor substrate wafer

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041478B2 (en) * 1979-09-10 1985-09-17 富士通株式会社 Manufacturing method of semiconductor laser device
DE3435306A1 (en) * 1984-09-26 1986-04-03 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING LASER DIODES WITH JUTTED INTEGRATED HEAT SINK
JPH07176827A (en) * 1993-08-20 1995-07-14 Mitsubishi Electric Corp Manufacture of semiconductor laser with modulator
US5418190A (en) * 1993-12-30 1995-05-23 At&T Corp. Method of fabrication for electro-optical devices
DE102017117136B4 (en) 2017-07-28 2022-09-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Method of manufacturing a plurality of laser diodes and laser diode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3471923A (en) * 1966-12-09 1969-10-14 Rca Corp Method of making diode arrays

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3471923A (en) * 1966-12-09 1969-10-14 Rca Corp Method of making diode arrays

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/71 *
EXBK/77 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0108475A2 (en) * 1982-09-10 1984-05-16 Western Electric Company, Incorporated Fabrication of cleaved semiconductor lasers
EP0108475A3 (en) * 1982-09-10 1985-08-21 Western Electric Company, Incorporated Fabrication of cleaved semiconductor lasers
EP0341034A2 (en) * 1988-05-06 1989-11-08 Sharp Kabushiki Kaisha A method for the production of semiconductor devices
EP0341034A3 (en) * 1988-05-06 1990-08-22 Sharp Kabushiki Kaisha A method for the production of semiconductor devices
US4929300A (en) * 1988-08-05 1990-05-29 Siemens Aktiengesellschaft Process for the separation of monolithic LED chip arrangements generated on a semiconductor substrate wafer

Also Published As

Publication number Publication date
DE2941476A1 (en) 1980-04-24
IT1123839B (en) 1986-04-30
CA1140661A (en) 1983-02-01
SE7908485L (en) 1980-04-14
GB2035684B (en) 1983-08-03
IT7926486A0 (en) 1979-10-12
NL7907625A (en) 1980-04-15
GB2035684A (en) 1980-06-18
IL58443A0 (en) 1980-01-31

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