KR940001499A

KR940001499A - Manufacturing method and structure of semiconductor laser diode

Info

Publication number: KR940001499A
Application number: KR1019920010025A
Authority: KR
Inventors: 양민
Original assignee: 이헌조; 주식회사 금성사
Priority date: 1992-06-10
Filing date: 1992-06-10
Publication date: 1994-01-11

Abstract

본 밭명은 구동전류를 낮추어 소비전력을 줄일 수 있고 주위온도 변화에 대해서 적은 영향을 받는 신뢰성이 높은 반도체 레이저 다이오드를 얻을 수 있게 한것에 목적을 둔 것이다.The purpose of this field is to reduce the power consumption by reducing the drive current and to obtain a highly reliable semiconductor laser diode which is less affected by the change in ambient temperature.

상기와 같은 목적을 가진 본 발명은 양자 우물구조외 활성층 성장을 LPE법으로 성장시키고, 메사형태와 기판을 사용하여 메사위와 아래부분의 에칭 성장율이 다른점을 이용하여 메사 윗부분에 매우 얇은 활성층을 얻도록 한것을 특징으로 한다.In the present invention having the above object, the active layer growth outside the quantum well structure is grown by the LPE method, and a very thin active layer is obtained on the upper part of the mesa by using the mesa type and the etching growth rate of the lower part of the mesa using the substrate. It is characterized by that.

Description

Manufacturing method and structure of semiconductor laser diode

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 종래의 반도체 레이저 다이오드의 구조도,1 is a structural diagram of a conventional semiconductor laser diode,

제2도의 (가) 내지 (라)는 본 발명의 반도체 레이저 다이오드외 제조 공정도,(A) to (D) of Figure 2 is a manufacturing process diagram other than the semiconductor laser diode of the present invention,

제3도는 제2도의 “A”부분 확대도,3 is an enlarged view of portion “A” of FIG.

제4도는 본 발명의 반도체 레이저 다이오드의 구조도.4 is a structural diagram of a semiconductor laser diode of the present invention.

Claims

An n-GaAs layer growing step of growing an n-GaAs layer 2 by an LPE method on a p-GaAs substrate 1 etched in a mesa form, and a V-groove (a photolithography method) on the n-GaAs layer 2. 3) forming the V-groove (3) forming step, p-Al _0.45 Ga _0.55 As layer (4), p-Al _0.14 Ga _0.86 As layer (5) and p-Al _{0.45 on the} n-GaAs layer (2) An LPE growth plant in which Ga _0.55 As layer 6 and n-GaAs 7 are sequentially grown by LPE method, and n-electrode 8 is formed on the surface of n-GaAs layer 7 to form n-GaAs substrate. (1) A method of manufacturing a semiconductor laser diode, which is produced by an electrode forming step of forming a p-electrode 9 on a surface.

The n-GaAs layer 2 grown on the p-GaAs substrate 1 in mesa form, the V groove 3 formed in the center of the n-GaAs layer, the n-GaAs layer 2 and the V groove 3 P-Al _0.45 Ga _0.55 As layer (4), p-Al _0.14 Ga _0.86 As layer (5), p-Al _0.45 Ga _0.55 As layer (6) and n-GaAs (7) And a layer formed on the surface of the semiconductor layer and the substrate.

The thickness of the upper thickness d ₁ , the inclined surface thickness d ₂ , and the lower thickness d _{3 of the} n-GaAs layer 2 grown on the mesa-type p-GaAs substrate 1 is determined. Structure of a semiconductor laser diode, characterized in that formed in different thickness.

4. The structure of a semiconductor laser diode according to claim 3, wherein the thickness of the n-GaAs layer (2) is d ₁ < d ₂ < d ₃ .

※ Note: The disclosure is based on the initial application.