IL58443A0 - Method of cleaving semiconductor wafers - Google Patents
Method of cleaving semiconductor wafersInfo
- Publication number
- IL58443A0 IL58443A0 IL58443A IL5844379A IL58443A0 IL 58443 A0 IL58443 A0 IL 58443A0 IL 58443 A IL58443 A IL 58443A IL 5844379 A IL5844379 A IL 5844379A IL 58443 A0 IL58443 A0 IL 58443A0
- Authority
- IL
- Israel
- Prior art keywords
- semiconductor wafers
- cleaving
- cleaving semiconductor
- wafers
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30617—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/951,064 US4237601A (en) | 1978-10-13 | 1978-10-13 | Method of cleaving semiconductor diode laser wafers |
US05/951,074 US4236296A (en) | 1978-10-13 | 1978-10-13 | Etch method of cleaving semiconductor diode laser wafers |
Publications (1)
Publication Number | Publication Date |
---|---|
IL58443A0 true IL58443A0 (en) | 1980-01-31 |
Family
ID=27130309
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL58443A IL58443A0 (en) | 1978-10-13 | 1979-10-12 | Method of cleaving semiconductor wafers |
Country Status (8)
Country | Link |
---|---|
CA (1) | CA1140661A (en) |
DE (1) | DE2941476A1 (en) |
FR (1) | FR2438914A1 (en) |
GB (1) | GB2035684B (en) |
IL (1) | IL58443A0 (en) |
IT (1) | IT1123839B (en) |
NL (1) | NL7907625A (en) |
SE (1) | SE7908485L (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6041478B2 (en) * | 1979-09-10 | 1985-09-17 | 富士通株式会社 | Manufacturing method of semiconductor laser device |
CA1201520A (en) * | 1982-09-10 | 1986-03-04 | Charles A. Burrus, Jr. | Fabrication of cleaved semiconductor lasers |
DE3435306A1 (en) * | 1984-09-26 | 1986-04-03 | Siemens AG, 1000 Berlin und 8000 München | METHOD FOR PRODUCING LASER DIODES WITH JUTTED INTEGRATED HEAT SINK |
JPH01280388A (en) * | 1988-05-06 | 1989-11-10 | Sharp Corp | Manufacture of semiconductor element |
DE3826736A1 (en) * | 1988-08-05 | 1990-02-08 | Siemens Ag | METHOD FOR SEPARATING LED CHIP ARRANGEMENTS MONOLITHICALLY PRODUCED ON A SEMICONDUCTOR SUB Wafer |
JPH07176827A (en) * | 1993-08-20 | 1995-07-14 | Mitsubishi Electric Corp | Manufacture of semiconductor laser with modulator |
US5418190A (en) * | 1993-12-30 | 1995-05-23 | At&T Corp. | Method of fabrication for electro-optical devices |
DE102017117136B4 (en) | 2017-07-28 | 2022-09-22 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Method of manufacturing a plurality of laser diodes and laser diode |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3471923A (en) * | 1966-12-09 | 1969-10-14 | Rca Corp | Method of making diode arrays |
-
1979
- 1979-10-12 IL IL58443A patent/IL58443A0/en unknown
- 1979-10-12 CA CA000337513A patent/CA1140661A/en not_active Expired
- 1979-10-12 GB GB7935539A patent/GB2035684B/en not_active Expired
- 1979-10-12 DE DE19792941476 patent/DE2941476A1/en not_active Withdrawn
- 1979-10-12 FR FR7925411A patent/FR2438914A1/fr active Pending
- 1979-10-12 IT IT26486/79A patent/IT1123839B/en active
- 1979-10-12 SE SE7908485A patent/SE7908485L/en not_active Application Discontinuation
- 1979-10-15 NL NL7907625A patent/NL7907625A/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
NL7907625A (en) | 1980-04-15 |
IT7926486A0 (en) | 1979-10-12 |
FR2438914A1 (en) | 1980-05-09 |
GB2035684A (en) | 1980-06-18 |
SE7908485L (en) | 1980-04-14 |
DE2941476A1 (en) | 1980-04-24 |
GB2035684B (en) | 1983-08-03 |
CA1140661A (en) | 1983-02-01 |
IT1123839B (en) | 1986-04-30 |
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