GB2035684B - Subdividing semiconductor wafers - Google Patents
Subdividing semiconductor wafersInfo
- Publication number
- GB2035684B GB2035684B GB7935539A GB7935539A GB2035684B GB 2035684 B GB2035684 B GB 2035684B GB 7935539 A GB7935539 A GB 7935539A GB 7935539 A GB7935539 A GB 7935539A GB 2035684 B GB2035684 B GB 2035684B
- Authority
- GB
- United Kingdom
- Prior art keywords
- subdividing
- semiconductor wafers
- wafers
- semiconductor
- subdividing semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 235000012431 wafers Nutrition 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30617—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Dicing (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/951,064 US4237601A (en) | 1978-10-13 | 1978-10-13 | Method of cleaving semiconductor diode laser wafers |
US05/951,074 US4236296A (en) | 1978-10-13 | 1978-10-13 | Etch method of cleaving semiconductor diode laser wafers |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2035684A GB2035684A (en) | 1980-06-18 |
GB2035684B true GB2035684B (en) | 1983-08-03 |
Family
ID=27130309
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB7935539A Expired GB2035684B (en) | 1978-10-13 | 1979-10-12 | Subdividing semiconductor wafers |
Country Status (8)
Country | Link |
---|---|
CA (1) | CA1140661A (en) |
DE (1) | DE2941476A1 (en) |
FR (1) | FR2438914A1 (en) |
GB (1) | GB2035684B (en) |
IL (1) | IL58443A0 (en) |
IT (1) | IT1123839B (en) |
NL (1) | NL7907625A (en) |
SE (1) | SE7908485L (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6041478B2 (en) * | 1979-09-10 | 1985-09-17 | 富士通株式会社 | Manufacturing method of semiconductor laser device |
CA1201520A (en) * | 1982-09-10 | 1986-03-04 | Charles A. Burrus, Jr. | Fabrication of cleaved semiconductor lasers |
DE3435306A1 (en) * | 1984-09-26 | 1986-04-03 | Siemens AG, 1000 Berlin und 8000 München | METHOD FOR PRODUCING LASER DIODES WITH JUTTED INTEGRATED HEAT SINK |
JPH01280388A (en) * | 1988-05-06 | 1989-11-10 | Sharp Corp | Manufacture of semiconductor element |
DE3826736A1 (en) * | 1988-08-05 | 1990-02-08 | Siemens Ag | METHOD FOR SEPARATING LED CHIP ARRANGEMENTS MONOLITHICALLY PRODUCED ON A SEMICONDUCTOR SUB Wafer |
JPH07176827A (en) * | 1993-08-20 | 1995-07-14 | Mitsubishi Electric Corp | Manufacture of semiconductor laser with modulator |
US5418190A (en) * | 1993-12-30 | 1995-05-23 | At&T Corp. | Method of fabrication for electro-optical devices |
DE102017117136B4 (en) * | 2017-07-28 | 2022-09-22 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Method of manufacturing a plurality of laser diodes and laser diode |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3471923A (en) * | 1966-12-09 | 1969-10-14 | Rca Corp | Method of making diode arrays |
-
1979
- 1979-10-12 FR FR7925411A patent/FR2438914A1/fr active Pending
- 1979-10-12 GB GB7935539A patent/GB2035684B/en not_active Expired
- 1979-10-12 DE DE19792941476 patent/DE2941476A1/en not_active Withdrawn
- 1979-10-12 SE SE7908485A patent/SE7908485L/en not_active Application Discontinuation
- 1979-10-12 IL IL58443A patent/IL58443A0/en unknown
- 1979-10-12 CA CA000337513A patent/CA1140661A/en not_active Expired
- 1979-10-12 IT IT26486/79A patent/IT1123839B/en active
- 1979-10-15 NL NL7907625A patent/NL7907625A/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
IT7926486A0 (en) | 1979-10-12 |
NL7907625A (en) | 1980-04-15 |
IL58443A0 (en) | 1980-01-31 |
DE2941476A1 (en) | 1980-04-24 |
GB2035684A (en) | 1980-06-18 |
CA1140661A (en) | 1983-02-01 |
IT1123839B (en) | 1986-04-30 |
SE7908485L (en) | 1980-04-14 |
FR2438914A1 (en) | 1980-05-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
732 | Registration of transactions, instruments or events in the register (sect. 32/1977) | ||
PCNP | Patent ceased through non-payment of renewal fee |