KR930009179A

KR930009179A - Manufacturing method of laser diode

Info

Publication number: KR930009179A
Application number: KR1019910017752A
Authority: KR
Inventors: 임시종
Original assignee: 이헌조; 주식회사 금성사
Priority date: 1991-10-10
Filing date: 1991-10-10
Publication date: 1993-05-22
Also published as: KR0179017B1

Abstract

본 발명은 레이저 다이오드의 제조방법과 관련된 것으로서, 종래에는 이러한 레이저 다이오드 제조공정이 적어도 3회의 에페공정, 1회의 포토에칭 공정, 선택성장의 SiO₂공정등 많은 제조 공정을 수반하므로서 그 제조과정이 복잡한 것이었고, 한편으로는 소위 CCD를 고려한 설계가 아니므로 초고출력을 얻는데 상당한 제약이 뒤따른다는 문제점등이 있었으나 , 본 발명에서는 이러한 종래 기술의 문제점을 개선할 수 있도록 단순한 공정에 COD등의 현상을 배제하므로서 초고출력 레이저 다이오드를 얻을 수 있도록, n-GaAs기판(11)을 기재로 하여 그위에 n-AlxGaAs clad층(12), p-AlyGAAs층(13), p-AlxGaAs clad층(14), n-GaAs층(15)을 차례로 성층시키는 제1공정과, n-GaAs층(15)에 역사다리꼴 면적의 골을 내는 포토에칭의 제2공정 및 그위에 다시 p-AlxGaAs층(16)과 p-GaAs Cap층(17)을 성층시키는 제3공정으로 된 레이저 다이오드의 제조방법을 제공하는데 있다.The present invention relates to a method of manufacturing a laser diode, which is conventionally complicated because such a laser diode manufacturing process involves many manufacturing processes, such as at least three epee processes, one photoetching process, and a selective growth SiO ₂ process. On the other hand, there is a problem that there is a considerable limitation in obtaining ultra-high output because it is not a design considering the CCD, but the present invention excludes a phenomenon such as COD in a simple process to improve the problems of the prior art. The n-AlxGaAs clad layer 12, the p-AlyGAAs layer 13, the p-AlxGaAs clad layer 14, n on the n-GaAs substrate 11 as a base material so that an ultra-high power laser diode can be obtained. A first step of sequentially stacking the GaAs layer 15, a second step of photoetching in which the n-GaAs layer 15 has an inverted trapezoidal area, and again the p-AlxGaAs layer 16 and the p- Castle GaAs Cap Layer (17) The present invention provides a method of manufacturing a laser diode in a third step of lamination.

Description

Manufacturing method of laser diode

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 종래의 레이저 다이오드 구조를 나타낸 참고도.1 is a reference diagram showing a conventional laser diode structure.

제2도는 본발명에 의한 제조된 레이저 다이오드의 참고 사시도.2 is a reference perspective view of a laser diode manufactured according to the present invention.

제3도는 제2도의 A-A선 단면도.3 is a cross-sectional view taken along the line A-A of FIG.

제4도는 제2도의 B-B선 단면도.4 is a cross-sectional view taken along the line B-B in FIG.

Claims

a first step of sequentially forming an n-AlxGaAs clad layer 12, a p-AlyGAAs layer 13, a p-AlxGaAs clad layer 14, and an n-GaAs layer 15 on the n-GaAs substrate 11; , the second process of photoetching the V-groove in the n-GaAs layer 15 and etching the cleaved surface portion to a predetermined depth, and again the p-AlxGaAs layer 16 and the p-GaAs Cap layer 17 A method for manufacturing a laser diode, comprising a manufacturing method including a third step of stratifying a layer).

2. The laser according to claim 1, wherein the first process can be an LPE, a MOVCD, or an MBE method, and in the case of the MOCVD or MBE method, the p-AlyGaAs layer 13, which is an active layer, is used as a QW or MQW. Method of manufacturing a diode.

The method according to claim 1 or 3, wherein in the second step, the etching depth and the etching width at the cleaved surface can be adjusted to suppress heat generation, and the etching depth is at least 0.1-10 mu m and the etching is performed at 2-50 mu m. Method for producing a laser diode, characterized in that the range.

※ Note: The disclosure is based on the initial application.