KR950021916A - Manufacturing method of laser diode - Google Patents

Manufacturing method of laser diode Download PDF

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Publication number
KR950021916A
KR950021916A KR1019930031532A KR930031532A KR950021916A KR 950021916 A KR950021916 A KR 950021916A KR 1019930031532 A KR1019930031532 A KR 1019930031532A KR 930031532 A KR930031532 A KR 930031532A KR 950021916 A KR950021916 A KR 950021916A
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KR
South Korea
Prior art keywords
layer
conductive type
uneven portion
laser diode
etching
Prior art date
Application number
KR1019930031532A
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Korean (ko)
Other versions
KR970003749B1 (en
Inventor
임시종
Original Assignee
이헌조
엘지전자 주식회사
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Priority to KR1019930031532A priority Critical patent/KR970003749B1/en
Publication of KR950021916A publication Critical patent/KR950021916A/en
Application granted granted Critical
Publication of KR970003749B1 publication Critical patent/KR970003749B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

본 발명은 레이저 다이오드의 제조방법에 관한 것으로, 제1도전형의 기판(1)상에 제1도전형의 클래드층(2), 활성층(3) 및 제2도전형의 클래드층(4)을 차례로 형성하는 공정과, 제2도전형의 클래드층(4)을 식각하여 중앙부분에 경사면이 (111)면 및 (110)면을 갖는 요철부를 형성하는 공정 및 상기 요부를 갖는 제2도전형의 클래드층(4)상에 전류제한층(5)을 에피택셜 성장시키는 공정을 포함하는 것을 제공한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a laser diode, wherein a cladding layer (2) of the first conductivity type, an active layer (3), and a cladding layer (4) of the second conductivity type are formed on a substrate (1) of the first conductivity type. A step of sequentially forming, a step of etching the clad layer 4 of the second conductive type to form an uneven portion having a (111) plane and a (110) plane on the central portion thereof, and a second conductive type having the recessed part. And epitaxially growing the current limiting layer 5 on the cladding layer 4.

이에 따라 클래드층과의 계면에 결함이 발생하는 일이 없고 표면이 평평한 전류 제한층이 형성되어 소자의 신뢰성이 향상되게 된다.As a result, a defect does not occur at the interface with the clad layer, and a current limiting layer having a flat surface is formed, thereby improving the reliability of the device.

Description

레이저다이오드의 제조방법Manufacturing method of laser diode

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 종래 레이저다이오드 구조도.1 is a structure diagram of a conventional laser diode.

제2도는 본 발명의 레이저다이오드 구조도.2 is a structure diagram of a laser diode of the present invention.

제3도는 본 발명의 레이저다이오드 구조도.3 is a structure diagram of a laser diode of the present invention.

제4도는 본 발명의 에천트 특성 테이블.4 is an etchant characteristic table of the present invention.

*도면의 주요부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *

1 : 기관2 : 클래드층1: Institution 2: Clad Layer

3 : 활성층4 : 클래드층3: active layer 4: cladding layer

5 : 전류제한층6 : 캡층5: current limit layer 6: cap layer

Claims (4)

제1도전형의 기판(1)상에 제1도전형의 클래드층(2), 활성층(3) 및 제2도전형의 클래드층(4)을 차례로 형성하는 공정과, 상기 제2도전형의 클래드층(4)의 소정부분을 식각하여 중앙부분에 경사면 (111)면 및 (110)면을 갖는 요철부를 형성하는 공정, 및 상기 요철부를 갖는 제2도전형의 클래드층(4)상에 전류제한층(5)을 에피택셜 성장시키는 공정을 포함하는 것을 특징으로 하는 레이저다이오드 제조방법.A step of sequentially forming a clad layer 2 of the first conductive type, an active layer 3, and a clad layer 4 of the second conductive type on the first conductive type substrate 1, and the second conductive type of Etching a predetermined portion of the cladding layer 4 to form an uneven portion having inclined surfaces 111 and 110 in its central portion, and a current on the clad layer 4 of the second conductive type having the uneven portion And a step of epitaxially growing the limiting layer (5). 제1항에 있어서, 상기 요철부의 경사면이 (111)면 및 (110)을 갖도록 제2도전형의 클래드층(4)을 식각하는 공정은 HCL : H2O2: H2O=40 : 4 : 1인 식각액을 이용하여 행하는 것을 특징으로 하는 레이저다이오드 제조방법.The process of etching the cladding layer 4 of the second conductive type so that the inclined surface of the uneven portion has (111) plane and (110) is HCL: H 2 O 2 : H 2 O = 40: 4 : A method for producing a laser diode, characterized in that it is performed using an etching solution of 1 person. 제1항에 있어서, 상기 요철부는 메사(Mesa)형태 또는 V홈 형태를 가짐을 특징으로 하는 레이저다이오드 제조방법.The method of claim 1, wherein the uneven portion has a mesa shape or a V groove shape. 제1항에 있어서, 상기 전류제한층은 MOCVD방법에 의해 성장시킴을 특징으로 하는 레이저다이오드 제조방법.The method of claim 1, wherein the current limiting layer is grown by MOCVD. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930031532A 1993-12-30 1993-12-30 Manufacture for laser diode KR970003749B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930031532A KR970003749B1 (en) 1993-12-30 1993-12-30 Manufacture for laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930031532A KR970003749B1 (en) 1993-12-30 1993-12-30 Manufacture for laser diode

Publications (2)

Publication Number Publication Date
KR950021916A true KR950021916A (en) 1995-07-26
KR970003749B1 KR970003749B1 (en) 1997-03-21

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ID=19374503

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930031532A KR970003749B1 (en) 1993-12-30 1993-12-30 Manufacture for laser diode

Country Status (1)

Country Link
KR (1) KR970003749B1 (en)

Also Published As

Publication number Publication date
KR970003749B1 (en) 1997-03-21

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