KR900001075A - Manufacturing method of high power composite semiconductor laser diode - Google Patents

Manufacturing method of high power composite semiconductor laser diode Download PDF

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Publication number
KR900001075A
KR900001075A KR1019880006915A KR880006915A KR900001075A KR 900001075 A KR900001075 A KR 900001075A KR 1019880006915 A KR1019880006915 A KR 1019880006915A KR 880006915 A KR880006915 A KR 880006915A KR 900001075 A KR900001075 A KR 900001075A
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KR
South Korea
Prior art keywords
type
manufacturing
laser diode
semiconductor laser
layer
Prior art date
Application number
KR1019880006915A
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Korean (ko)
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KR910005315B1 (en
Inventor
송재경
이용운
Original Assignee
강진구
삼성반도체통신 주식회사
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Priority to KR1019880006915A priority Critical patent/KR910005315B1/en
Publication of KR900001075A publication Critical patent/KR900001075A/en
Application granted granted Critical
Publication of KR910005315B1 publication Critical patent/KR910005315B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H01S5/221—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials containing aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

내용 없음No content

Description

고출력 복합 반도체 레이저 다이오우드 제조방법Manufacturing method of high power composite semiconductor laser diode

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1(A)-(C)도는 본 발명에 따른 제조공정도.1 (A)-(C) is a manufacturing process diagram according to the present invention.

Claims (4)

반도체 레이저 다이오우드의 제조방법에 있어서, 상기 반도체 GaAs 제1도전형 기판상에 제2도전형의 AlGaAs전류 제한층을 에피택셜 성장시키는게 하는 제1공정과, 상기 기판면과 소정 각도를 갖게 깊은 브이형의 채널을 형성하는 제2공정과, 상기 기판상에 p형의 제1도전형의 AlGaAs클래딩층, 제1도전형의 AlGaAs저항성 접속층을 순차적으로 에피택셜 성장시키는 제3공정과, 상기 저항성 접속층상에 제2금속전극층을 형성하고 상기 제1도전형의 기판 아래에 제1금속전극층을 형성하는 제4공정을 구비하여 상기 공정의 연속으로 이루어짐을 특징으로 하는 반도체 레이저 다이오드의 제조방법.A method for manufacturing a semiconductor laser diode, comprising: a first step of epitaxially growing an AlGaAs current limiting layer of a second conductivity type on a semiconductor GaAs first conductivity type substrate, and a deep V type having a predetermined angle with the substrate surface And a third step of sequentially epitaxially growing a p-type first conductivity type AlGaAs cladding layer and a first conductivity type AlGaAs resistive connection layer on the substrate, and the resistive connection. And a fourth step of forming a second metal electrode layer on the layer and forming a first metal electrode layer under the substrate of the first conductive type, wherein the step is performed continuously. 제1항에 있어서, 제2공정의 브이형의 채널이 기판면과 45˚의 각도로 형성되어지는 것을 특징으로 하는 반도체 레이저 다이오드 제조방법.The method of manufacturing a semiconductor laser diode according to claim 1, wherein the V-shaped channel of the second step is formed at an angle of 45 [deg.] With the substrate surface. 제1항에 있어서, 제3공정의 상기 제1도전형의 클래딩층이 상기 제1도전형의 활성층보다 Al의 몰비가 더 크게 형성되도록 이루어짐을 특징으로 하는 반도체 레이저 다이오드의 제조방법.The method of manufacturing a semiconductor laser diode according to claim 1, wherein the cladding layer of the first conductive type in the third step is formed such that a molar ratio of Al is formed larger than the active layer of the first conductive type. 제3항에 있어서, 제1도전형의 p형으로 형성하고 제2도전형을 n형으로 형성하는 것을 특징으로 하는 반도체 레이저 다이오드의 제조방법.The method of manufacturing a semiconductor laser diode according to claim 3, wherein the first conductive type is formed in a p type and the second conductive type is formed in an n type. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019880006915A 1988-06-09 1988-06-09 High power complex semiconductor laser diode manufacture method KR910005315B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019880006915A KR910005315B1 (en) 1988-06-09 1988-06-09 High power complex semiconductor laser diode manufacture method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880006915A KR910005315B1 (en) 1988-06-09 1988-06-09 High power complex semiconductor laser diode manufacture method

Publications (2)

Publication Number Publication Date
KR900001075A true KR900001075A (en) 1990-01-31
KR910005315B1 KR910005315B1 (en) 1991-07-24

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880006915A KR910005315B1 (en) 1988-06-09 1988-06-09 High power complex semiconductor laser diode manufacture method

Country Status (1)

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KR (1) KR910005315B1 (en)

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Publication number Publication date
KR910005315B1 (en) 1991-07-24

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