KR940003129A

KR940003129A - Semiconductor laser diode and manufacturing method

Info

Publication number: KR940003129A
Application number: KR1019920013597A
Authority: KR
Inventors: 김종석; 최원진
Original assignee: 이헌조; 주식회사 금성사
Priority date: 1992-07-29
Filing date: 1992-07-29
Publication date: 1994-02-19

Abstract

본 발명은 반도체 레이저 다이오드 및 제조방법에 관한 것으로 종래에는 전류제한층을 선택적으로 식각하여 콘택층을 재성장 시킬시 전류제한층 하부의 인(P)이 칼륨(Ga)과 결합하여 전류제한층위에 GaP층을 형성하여 인터페이스에 서로다른 격자 상수로 이동을 발생시켜 소자의 수명단축 및 소자의 특성을 저하시키는 문제점이 있었다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser diode and a manufacturing method. In the related art, when a current limiting layer is selectively etched to regrow a contact layer, phosphorus (P) under the current limiting layer is combined with potassium (Ga) to form GaP on the current limiting layer. Formation of a layer causes movement at different lattice constants in the interface, thereby shortening the lifespan of the device and reducing the device characteristics.

본 발명은 상기와 같은 종래의 문제점을 감안하여 전류제한층과 곤택층 사이에 식각방지층을 형성하고 이차 성장시 GAsH₃분위기에서 온도를 상승하여 제조함으로서 인터페이스에서 발생하는 GaP층을 방지하여 소자의 수명 연장 및 특성을 개선하는 효과가 있다.In view of the above-mentioned problems, the present invention forms an etch stop layer between the current limiting layer and the contact layer, and manufactures by increasing the temperature in the GAsH ₃ atmosphere during secondary growth to prevent the GaP layer generated at the interface, thereby increasing the lifespan of the device. There is an effect of improving the extension and properties.

Description

Semiconductor laser diode and manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도의 (가) 내지 (라)는 본 발명에 따른 반도체 레이저 다이오드 제조 공정도 및 단면도,(A) to (D) of Figure 2 is a manufacturing process diagram and cross-sectional view of a semiconductor laser diode according to the present invention,

제3도는 본 발명의 다른 실시 예시도.3 is another exemplary embodiment of the present invention.

Claims

On the GaAs substrate 1, a buffer layer 2, an N-type cladding layer 3, an active layer 4, a P-type cladding layer 5, and a P ⁺ type GaIn P layer 6 are formed, and the P ⁺ type GaIn The P-type electrode 11 and the N-type electrode under the GaAs substrate 1 on the contact layer 8, the etch stop layer 9, the current limiting layer 7, and the contact layer 8 on the P layer 6. 10) A method of manufacturing a semiconductor laser diode by forming.

The method of manufacturing a semiconductor laser diode according to claim 1, wherein the etch stop layer (9) is manufactured at several tens of degrees without electrical and optical effects.

A method according to claim 1, wherein the etch stop layer (9) is made of the same cognate element as the contact layer (8) and the current limiting layer (7).

In a composition of a semiconductor laser diode having a buffer layer (2), a clad layer (3, 5) active layer (4), a current limiting layer (7) and a contact layer (8) on a GaAs substrate (1), the contact layer (8) A semiconductor laser diode having an anti-etching layer 9 provided between a layer and a current limiting layer 7.

An N-type electrode 10 is formed below the GaAs substrate 1, and a buffer layer 2, an N-type cladding layer 3, an active layer 4, a P-type cladding layer 5, and a contact layer 8 are formed thereon. A semiconductor laser diode having an etch stop layer (9) and a current limiting layer (7), wherein a contact layer (8) and a P-type electrode (11) are provided on the current limiting layer (7).

※ Note: The disclosure is based on the initial application.