KR950012831A - Semiconductor laser diode with large optical resonator structure - Google Patents

Semiconductor laser diode with large optical resonator structure Download PDF

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Publication number
KR950012831A
KR950012831A KR1019930020941A KR930020941A KR950012831A KR 950012831 A KR950012831 A KR 950012831A KR 1019930020941 A KR1019930020941 A KR 1019930020941A KR 930020941 A KR930020941 A KR 930020941A KR 950012831 A KR950012831 A KR 950012831A
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South Korea
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layer
type
laser diode
semiconductor laser
optical resonant
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KR1019930020941A
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Korean (ko)
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KR100278628B1 (en
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김택
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김광호
삼성전자 주식회사
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Abstract

본 발명에 따른 대 광공진기 구조를 갖는 반도체 레이저 다이오드는 n형 GaAs 기판(101)의 상부에 제1크래드층, 광 공진층, 활성층, 제2크래드층이 순차적으로 적층된 구조를 갖는 것으로서, 광 공진층은 n형 불순물이 도핑되는 AlGaAs로 구성된다. n형 AlGaAs 광 공진층은 도핑되는 도판트의 양이 작아 격자 결함을 보다 작게 유발하게 되고, 그에 따라 산란 손실과 같은 내부손실이 작아 고출력 동작에 적합한 특성을 갖게 된다.The semiconductor laser diode having a large optical resonator structure according to the present invention has a structure in which a first cladding layer, an optical resonant layer, an active layer, and a second cladding layer are sequentially stacked on an n-type GaAs substrate 101. The optical resonant layer is composed of AlGaAs doped with n-type impurities. The n-type AlGaAs optical resonant layer has a small amount of dopant to be doped to cause lattice defects, and thus has low internal losses such as scattering loss, which is suitable for high output operation.

Description

대 광공진기 구조를 갖는 반도체 레이저 다이오드Semiconductor laser diode with large optical resonator structure

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 종래기술에 따른 대 광공진기(large optical cavity : LOC) 구조의 반도체 레이저 다이오드의 단면도이다.1 is a cross-sectional view of a semiconductor laser diode of a large optical cavity (LOC) structure according to the prior art.

제2도는 본 발명에 따른 LOC 구조를 갖는 반도체 레이저 다이오드의 단면도이다.2 is a cross-sectional view of a semiconductor laser diode having a LOC structure according to the present invention.

제3도는 LOC 구조의 동작원리를 설명하기 위한 도면이다.3 is a view for explaining the operation principle of the LOC structure.

Claims (6)

반도체 기판; 상기 기판 상에 형성된 제1크래드층; 상기 제1크래드층의 상부에 형성되는 AlGaAs 광 공진층; 상기 AlGaAs 광 공진층의 상부에 순차적으로 형성된 활성층 및 제2크래드층을 구비하는 것을 특징으로 하는 반도체 레이저 다이오드.Semiconductor substrates; A first clad layer formed on the substrate; An AlGaAs optical resonant layer formed on the first clad layer; And an active layer and a second cladding layer sequentially formed on the AlGaAs optical resonant layer. 제1항에 있어서, 상기 기판은 n형 GaAs로 구성되고, 상기 제1크래드층 및 제2크래드층은 각각 n형 InGaAIP 및 p형 InGaAIP로 구성되며, 상기 활성층은 InGaP로 구성되고, 상기 AlGaAs 광 공진층은 n형 불순물이 도핑되어 형성된 것을 특징으로 하는 반도체 레이저 다이오드.The method of claim 1, wherein the substrate is composed of n-type GaAs, the first clad layer and the second clad layer is composed of n-type InGaAIP and p-type InGaAIP, respectively, and the active layer is composed of InGaP The AlGaAs optical resonant layer is a semiconductor laser diode, characterized in that formed by doping the n-type impurities. 제1항에 있어서, 상기 제2크래드층은 중앙부위가 돌출된 메사 구조를 갖는 것을 특징으로 하는 반도체 레이저 다이오드.The semiconductor laser diode of claim 1, wherein the second clad layer has a mesa structure with a protruding central portion. 제3항에 있어서, 상기 제2크래드층중 돌출부위의 상부에 적층된 p형 InGaP 통전용이층; 상기 제2크래드층중 p형 InGaP 통전용이층이 적층되지 않은 나머지 부위에 적충된 n형 GaAs 전류차단층; 상기 p형 InGaP 통전용이층 및 n형 GaAs 전류차단층로 이루어진 표면의 상부에 적충된 p형 GaAs 캡층; 및 상기 p형 GaAs 캡층의 상부 및 상기 기판의 하부에 각각 형성된 제1도전층 및 제2도전층을 더 구비하는 것을 특징으로 하는 반도체 레이저 다이오드.[4] The semiconductor device of claim 3, further comprising: a p-type InGaP passivation layer stacked on an upper portion of the second cladding layer; An n-type GaAs current blocking layer in which the p-type InGaP conducting double layer is not stacked in the second clad layer; A p-type GaAs cap layer deposited on an upper surface of the p-type InGaP conducting bilayer and an n-type GaAs current blocking layer; And a first conductive layer and a second conductive layer formed on an upper portion of the p-type GaAs cap layer and a lower portion of the substrate, respectively. 제1항에 있어서, 상기 기판과 상기 제1크래드층 사이에 형성된 GaAs 버퍼층을 더 구비하는 것을 특징으로 하는 반도체 레이저 다이오드.The semiconductor laser diode of claim 1, further comprising a GaAs buffer layer formed between the substrate and the first clad layer. 제1항에 있어서, 상기 AlGaAs 광 공진층은 n형 불순물이 도핑되는 Al0.7Ga0.3As로 구성되는 것을 특징으로 하는 반도체 레이저 다이오드.The semiconductor laser diode of claim 1, wherein the AlGaAs optical resonant layer is made of Al 0.7 Ga 0.3 As doped with n-type impurities. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930020941A 1993-10-09 1993-10-09 Semiconductor laser diode with large optical resonator structure KR100278628B1 (en)

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KR1019930020941A KR100278628B1 (en) 1993-10-09 1993-10-09 Semiconductor laser diode with large optical resonator structure

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KR1019930020941A KR100278628B1 (en) 1993-10-09 1993-10-09 Semiconductor laser diode with large optical resonator structure

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KR950012831A true KR950012831A (en) 1995-05-17
KR100278628B1 KR100278628B1 (en) 2001-02-01

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100657905B1 (en) * 2004-10-27 2006-12-14 삼성전자주식회사 Semiconductor Laser Diode with Optical Cavities

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100657905B1 (en) * 2004-10-27 2006-12-14 삼성전자주식회사 Semiconductor Laser Diode with Optical Cavities

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