KR950012831A - Semiconductor laser diode with large optical resonator structure - Google Patents
Semiconductor laser diode with large optical resonator structure Download PDFInfo
- Publication number
- KR950012831A KR950012831A KR1019930020941A KR930020941A KR950012831A KR 950012831 A KR950012831 A KR 950012831A KR 1019930020941 A KR1019930020941 A KR 1019930020941A KR 930020941 A KR930020941 A KR 930020941A KR 950012831 A KR950012831 A KR 950012831A
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- laser diode
- semiconductor laser
- optical resonant
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- Semiconductor Lasers (AREA)
Abstract
본 발명에 따른 대 광공진기 구조를 갖는 반도체 레이저 다이오드는 n형 GaAs 기판(101)의 상부에 제1크래드층, 광 공진층, 활성층, 제2크래드층이 순차적으로 적층된 구조를 갖는 것으로서, 광 공진층은 n형 불순물이 도핑되는 AlGaAs로 구성된다. n형 AlGaAs 광 공진층은 도핑되는 도판트의 양이 작아 격자 결함을 보다 작게 유발하게 되고, 그에 따라 산란 손실과 같은 내부손실이 작아 고출력 동작에 적합한 특성을 갖게 된다.The semiconductor laser diode having a large optical resonator structure according to the present invention has a structure in which a first cladding layer, an optical resonant layer, an active layer, and a second cladding layer are sequentially stacked on an n-type GaAs substrate 101. The optical resonant layer is composed of AlGaAs doped with n-type impurities. The n-type AlGaAs optical resonant layer has a small amount of dopant to be doped to cause lattice defects, and thus has low internal losses such as scattering loss, which is suitable for high output operation.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도는 종래기술에 따른 대 광공진기(large optical cavity : LOC) 구조의 반도체 레이저 다이오드의 단면도이다.1 is a cross-sectional view of a semiconductor laser diode of a large optical cavity (LOC) structure according to the prior art.
제2도는 본 발명에 따른 LOC 구조를 갖는 반도체 레이저 다이오드의 단면도이다.2 is a cross-sectional view of a semiconductor laser diode having a LOC structure according to the present invention.
제3도는 LOC 구조의 동작원리를 설명하기 위한 도면이다.3 is a view for explaining the operation principle of the LOC structure.
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930020941A KR100278628B1 (en) | 1993-10-09 | 1993-10-09 | Semiconductor laser diode with large optical resonator structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930020941A KR100278628B1 (en) | 1993-10-09 | 1993-10-09 | Semiconductor laser diode with large optical resonator structure |
Publications (2)
Publication Number | Publication Date |
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KR950012831A true KR950012831A (en) | 1995-05-17 |
KR100278628B1 KR100278628B1 (en) | 2001-02-01 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019930020941A KR100278628B1 (en) | 1993-10-09 | 1993-10-09 | Semiconductor laser diode with large optical resonator structure |
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KR (1) | KR100278628B1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100657905B1 (en) * | 2004-10-27 | 2006-12-14 | 삼성전자주식회사 | Semiconductor Laser Diode with Optical Cavities |
-
1993
- 1993-10-09 KR KR1019930020941A patent/KR100278628B1/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100657905B1 (en) * | 2004-10-27 | 2006-12-14 | 삼성전자주식회사 | Semiconductor Laser Diode with Optical Cavities |
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Publication number | Publication date |
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KR100278628B1 (en) | 2001-02-01 |
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