KR960002991A

KR960002991A - Compound Semiconductor Laser Diode and Manufacturing Method Thereof

Info

Publication number: KR960002991A
Application number: KR1019940015229A
Authority: KR
Inventors: 이종원
Original assignee: 김광호; 삼성전자 주식회사
Priority date: 1994-06-29
Filing date: 1994-06-29
Publication date: 1996-01-26

Abstract

본 발명은 화합물 반도체 레이저 다이오드 및 그 제조방법에 관한 것으로,상세하게는 InGaP 의 3원 혼정계와 InGaA1P의 4원 혼정계를 사용하여 600nm대의 발진 파장을 가지며,낮은 임계 구동 전류와 낮은 비점수차를 가지는 굴절율 도파형의 화합물 반도체 레이저 다이오드 및 그 제조 방법에 관한 것이다.The present invention relates to a compound semiconductor laser diode and a method of manufacturing the same. In detail, the InGaP ternary crystal system and InGaA1P ternary crystal system have an oscillation wavelength of 600 nm, and have a low critical driving current and low astigmatism. The present invention relates to a compound semiconductor laser diode having a refractive index waveguide and a method of manufacturing the same.

즉,본 발명에 따른 화합물 레이저 다이오드는 제2상부 크래드층을 역메사형으로 하방으로 돌출케하여 통전 채널을 구성하고 그 상부는 평탄화된 구조로 하여 성장 공정을 2차로 단축함으로써,공정의 단순화로 생산성이 향상되며,A1성분을 포함한 층들을 대기에 노출함이 없이 제작공정이 진행되어 A1의 산화에 의한 결정성 저하(소자의 성능 저하)를 방지할 수 있으며,평탄성이 높아 다이본딩을 실시하기 쉬운 장점이 있다.That is, the compound laser diode according to the present invention protrudes the second upper clad layer downward in a reverse mesa shape to form a conduction channel, and the upper portion thereof has a flattened structure, thereby shortening the growth process secondarily, thereby simplifying the process. Productivity is improved, and the manufacturing process is progressed without exposing the layer containing A1 component to the atmosphere, thereby preventing deterioration of crystallinity (degradation of device) due to oxidation of A1, and having high flatness to perform die bonding. There is an easy advantage.

Description

Compound Semiconductor Laser Diode and Manufacturing Method Thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 종래의 SBR 구조의 화합물 반도체 레이저 다이오드의 수직 단면도이다.1 is a vertical sectional view of a compound semiconductor laser diode of a conventional SBR structure.

제2도는 본 발명에 따른 화합물 반도체 레이저 다이오드의 수직 단면도이다.2 is a vertical cross-sectional view of the compound semiconductor laser diode according to the present invention.

Claims

A compound semiconductor laser diode having a laser oscillation layer in which a lower clad layer, an active layer, and an upper clad layer are sequentially stacked between a substrate and a cap layer, wherein the upper clad layer includes a first upper clad layer and a second upper part. It is separated into a clad layer, a conductive etch stop layer is interposed between the first upper clad layer and the second upper clad layer, and a current blocking having a channel having a predetermined width in the center of the etch stop layer. A layer is formed, and a central portion thereof is an energizing channel capable of supplying electricity, and the second upper clad layer is grown in the channel to be stacked on the current blocking layer while filling the channel, and the upper surface of the second upper clad layer The compound semiconductor laser diode which is laminated | stacked sequentially the easy pass layer and the cap layer.

The compound semiconductor laser diode of claim 1, wherein the upper and lower clad layers have a lower refractive index than the active layer.

The method of claim 1, wherein the substrate is n-GaAs, the lower clad layer is n-In _0.5 (Ga _0.3 A1 _0.7 ) _0.5 P of a four-way mixed crystal system, and the active layer is undoped-InGaP of a three-way mixed crystal system, The first upper cladding layer is p-In _0.5 (Ga _0.3 A1 _0.7 ) _0.5 P of a four-way mixed crystal system, and the second upper cladding layer is p-In _0.5 (Ga _0.3 A1 _0.7 ) _0.5 P, the current blocking layer Silver n-GaAs, The conductive layer is p-InGaP, The cap layer is a compound semiconductor laser diode, characterized in that formed of p-GaAs.

The n-type impurity is doped in the current blocking layer, and the etch stop layer is doped in p-type, so that the current blocking layer is blocked by a potential barrier by a pn reverse junction. A compound semiconductor laser diode.

The compound semiconductor laser diode of claim 1, wherein an upper surface of the second upper clad layer has a flat surface.

A first growth step of sequentially growing and laminating a lower clad layer, an active layer, an upper first clad layer, an etch stop layer, and a current blocking layer on an upper surface of the substrate by an epitaxy process; Etching the predetermined width of the center portion of the current blocking layer to an etch stop layer to form a conduction channel, and filling the conduction channel formed in the etching step, wherein the second upper clad layer, an easily conducting layer, and a cap layer are formed. And a second growth step of sequentially growing and stacking the compound semiconductor laser diodes.

The method of claim 6, wherein in the etching step, the current blocking layer is etched in a reverse mesa direction by a wet etching method.

※ Note: The disclosure is based on the original application.