KR930022647A

KR930022647A - Manufacturing method of laser diode

Info

Publication number: KR930022647A
Application number: KR1019920006445A
Authority: KR
Inventors: 박주성
Original assignee: 김광호; 삼성전자 주식회사
Priority date: 1992-04-17
Filing date: 1992-04-17
Publication date: 1993-11-24
Also published as: KR950011996B1

Abstract

제1클레드층, 활성층, 제2클레드층 및 캡층을 구비하는 LD의 제조방법에 있어서, 활성층에 소량의 In을 첨가하여 활성층의 τcrss를 증가시켜 활성층과 제1 및 제2클레드층 및 캡층내에 전위, 빈격자점 그리고 핀홀등의 결함생성을 방지하였다. 따라서 LD내에서 전자나 정공의 트랩으로 작용하는 전위, 빈격자점 및 핀홀등의 결함이 감소하여 LD의 광효율 및 신뢰성을 향상시킬 수 있다.In the manufacturing method of the LD having the first cladding layer, the active layer, the second cladding layer and the cap layer, by adding a small amount of In to the active layer to increase the τcrss of the active layer to the active layer and the first and second cladding layer and Defects such as dislocations, void lattice points, and pinholes were prevented in the cap layer. Therefore, defects such as potentials, void lattice points, and pinholes acting as traps of electrons or holes in the LD can be reduced, thereby improving the light efficiency and reliability of the LD.

Description

Manufacturing method of laser diode

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1(a)~(b)도는 종래 레이저다이오드의 제조공정도.1 (a) to (b) is a manufacturing process diagram of a conventional laser diode.

제2(a)~(c)도는 이 발명에 따른 레이저다이오드의 제조 공정도이다.2 (a) to (c) are manufacturing process diagrams of the laser diode according to the present invention.

Claims

Forming a first cladding layer of a first conductivity type on a semiconductor substrate of a first conductivity type, forming an active layer on the first cladding layer, and a second conductive type second layer on the active layer Forming a clad layer, forming a cap layer of a second conductivity type on the surface of the second clad layer, and forming an insulating layer on the cap layer, and then etching a predetermined portion of the insulating layer. Forming a connection window so that a portion of the cap layer is exposed; forming a second conductive electrode on the surface of the insulating layer and the cap layer; and forming an electrode of the first conductive type on the lower surface of the semiconductor substrate. A method of manufacturing a laser diode having a step, wherein the active layer is formed by containing In at a molar ratio of 10% or less.

The method of manufacturing a laser diode according to claim 1, wherein the semiconductor substrate is a GaAs substrate, the first and second clad layers are AlGaAs layers, the active layer is InAlGaAs, and the cap layer is GaAs.

The method of manufacturing a laser diode according to claim 1, wherein the insulating layer is formed of one insulating material arbitrarily selected from bacteria comprising silicon oxide and silicon nitride.

The method of claim 1, wherein the first cladding layer, the active layer, the second cladding layer, and the cap layer are formed by one method arbitrarily selected from the group consisting of LPE and MOCVD.

※ Note: The disclosure is based on the initial application.