KR970003749B1 - Manufacture for laser diode - Google Patents

Manufacture for laser diode Download PDF

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Publication number
KR970003749B1
KR970003749B1 KR1019930031532A KR930031532A KR970003749B1 KR 970003749 B1 KR970003749 B1 KR 970003749B1 KR 1019930031532 A KR1019930031532 A KR 1019930031532A KR 930031532 A KR930031532 A KR 930031532A KR 970003749 B1 KR970003749 B1 KR 970003749B1
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KR
South Korea
Prior art keywords
layer
laser diode
conductive type
plane
clad layer
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KR1019930031532A
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Korean (ko)
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KR950021916A (en
Inventor
임시종
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엘지전자 주식회사
구자홍
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Priority to KR1019930031532A priority Critical patent/KR970003749B1/en
Publication of KR950021916A publication Critical patent/KR950021916A/en
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Publication of KR970003749B1 publication Critical patent/KR970003749B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE

Abstract

(a) The first conduction type clad layer(2) and the second conduction type active layer(3) is formed on the first conduction type subsrate(1). (b) After the second conduction type clad layer(4) is formed on the active layer, the upper part of inclined plane is etched to contain (110)plane and the inclined plane is etched to contain (111)plane. (c) After the clad layer is etched, the current limit layer(5) of even plane is formed by growing the current limit layer of the first conduction type. (d) The second conduction type cap layer(6) is formed on the current limit layer.

Description

레이저다이오드의 제조방법Manufacturing method of laser diode

제1도는 종래 레이저다이오드 구조도.1 is a structure diagram of a conventional laser diode.

제2도는 본 발명의 레이저다이오드 구조도.2 is a structure diagram of a laser diode of the present invention.

제3도는 본 발명의 레이저다이오드 구조도.3 is a structure diagram of a laser diode of the present invention.

제4도는 본 발명의 에천트 특성 테이블.4 is an etchant characteristic table of the present invention.

*도면의 주요부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *

1 : 기관2 : 클래드층1: Institution 2: Clad Layer

3 : 활성층4 : 클래드층3: active layer 4: cladding layer

5 : 전류제한층6 : 캡층5: current limit layer 6: cap layer

본 발명은 레이저다이오드의 제조방법에 관한 것으로, 특히 클래드층과 전류제한층 계면의 결함발생을 억제하여 소자의 신뢰성을 향상시키는 레이저다이오드의 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a laser diode, and more particularly, to a method of manufacturing a laser diode which improves reliability of a device by suppressing defects between the cladding layer and the current limiting layer.

제1도는 종래 미쯔비시사등에서 MOCVD(Metal Organic Chemical Vapor Deposition) 방법을 이용하여 제조한 레이저다이오드 구조를 나타낸 것으로, 이의 제조방법을 설명하면 다음과 같다.FIG. 1 illustrates a laser diode structure manufactured by Mitsubishi Corporation using MOCVD (Metal Organic Chemical Vapor Deposition) method. The manufacturing method thereof is as follows.

우선, 기판(1)위에 클래드층(2), 활성층(3), 클래드층(4)을 순차적으로 에피택셜(Epitaxial) 성장시킨다.First, the cladding layer 2, the active layer 3, and the cladding layer 4 are sequentially epitaxially grown on the substrate 1.

이때 클래드층(4)은 제1도에 도시된 중간부분의 두께만큼 성장시킨 다음 양측부위를 식각하여 메사(Mesa)형태를 형성한 후, MOCVD를 이용한 선택적 성장(Selective Growth)을 통해 전류제한층(5)을 형성하고, 캡층(6)을 형성한다.At this time, the cladding layer 4 is grown to the thickness of the middle portion shown in FIG. 1, and then both sides are etched to form a mesa shape, and then the current limiting layer is formed through selective growth using MOCVD. (5) is formed and the cap layer 6 is formed.

상기한 종래 방법에 있어서, 클래드층(4)을 식각하게 되면 클래드층(4)의 양측부위가 (111)면이 노출되어 상대적으로 (100)면보다 에피택셜 성장속도가 빨라져 선택적 성장시킨 전류제한층(5)이 제1도에 도시된 바와같이 굴곡진 형태로 형성되게 된다.In the above-described conventional method, when the cladding layer 4 is etched, both sides of the cladding layer 4 are exposed to the (111) plane so that the epitaxial growth rate is relatively faster than the (100) plane. (5) is to be formed in a curved shape as shown in FIG.

이 굴곡으로 인해 클래드층(4)와 전류제한층(5)사이에 핀홀(Pin hole), 크랙 (Crack)등이 발생하여 누설(Leakage)의 발생원으로 작용하므로 소차의 신뢰성을 저하시키게 되고, 칩제작 후 조립할 경우 굴곡으로 인해 소자의 조립이 어려운 문제점이 있다.Due to this bending, pinholes, cracks, etc. are generated between the cladding layer 4 and the current limiting layer 5, which acts as a source of leakage. When assembling after fabrication, there is a problem in that the assembly of the device is difficult due to bending.

본 발명은 상술한 문제를 해결하기 위한 것으로, 클래드층과 전류제한층 계면의 결함발생을 억제시켜 소자의 신뢰성을 향상시키는 레이저다이오드 제조방법을 제공함에 그 목적이 있다.SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object thereof is to provide a method of manufacturing a laser diode which improves the reliability of a device by suppressing the occurrence of defects at the interface between the cladding layer and the current limiting layer.

상기 목적을 달성하기 위해 본 발명의 레이저다이오드는 제1도전형의 기판(1)상에 제1도전형의 클래드층(2), 활성층(3) 및 제2도전형의 클래드층(4)을 차례로 형성하는 공정과, 상기 제2도전형의 클래드층(4)의 소정부분을 식각하여 중앙부분에 경사면(111)면 및 (110)면을 갖는 요철부를 형성하는 공정, 및 상기 요철부를 갖는 제2도전형의 클래드층(4)상에 전류제한층(5)을 에피택셜 성장시키는 공정을 포함하는 것을 특징으로 한다.In order to achieve the above object, the laser diode of the present invention uses the first conductive cladding layer 2, the active layer 3, and the second conductive cladding layer 4 on the first conductive substrate 1. A step of sequentially forming, a step of forming a concave-convex portion having an inclined surface (111) surface and a (110) surface in a central portion by etching a predetermined portion of the clad layer (4) of the second conductive type; And epitaxially growing the current limiting layer 5 on the two-conductive cladding layer 4.

이하, 첨부된 도면을 참조하여 본 발명을 상세히 설명한다.Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.

제2도에 본 발명에 의한 반도체 레이저다이오드를 나타내었는바, 이를 참조하여 본 발명의 레이저다이오드 제조방법을 설명한다.2 shows a semiconductor laser diode according to the present invention, a method of manufacturing the laser diode of the present invention will be described.

먼저, 제1도전형의 기판(1)상에 제1도전형의 클래드층(2)과 제2도전형의 활성층(3)(양자우물 Quantum Well)구조일 수도 있다)을 차례로 형성한다.First, the clad layer 2 of the first conductivity type and the active layer 3 (which may have a quantum well quantum well structure) of the first conductivity type are sequentially formed on the substrate 1 of the first conductivity type.

이어서 상기 활성층(3)상에 제2도전형의 클래드층(4)을 형성한 후, 그양측부위를 식각하는바, 제2도에 도시된 바와같이 경사면의 상부는 (110)면을 가지며 경사면은 (111)면을 갖도록 식각을 행한다.Subsequently, after the cladding layer 4 of the second conductive type is formed on the active layer 3, both sides thereof are etched. As shown in FIG. 2, the upper part of the inclined surface has a (110) plane and an inclined surface. The etching is performed to have a (111) plane.

이와 같은 형태로 만들기 위해서는 HCL : H2O2: H2O=40 : 4 : 1의 식각액을 이용하여 상기 클래드층(4)을 식각한다.(제4도 참조)In order to achieve this configuration, the cladding layer 4 is etched using an etching solution of HCL: H 2 O 2 : H 2 O = 40: 4: 1 (see FIG. 4).

MOCVD방법을 이용하여 결정성장을 행하면 그 성장속도가 (111)면>(110)면>(100)면의 순서로 빠르므로 상기한 바와 같이 클래드층(4)을 식각한 다음 제1도 전형의 전류제한층(5)을 성장시키면 경사면 상부는 (110)면으로 되어 있어 (111)면으로 된 경사면보다 성장속도가 느려 도면에 나타난 바와 같이 평평한 면을 갖는 전류제한층(5)이 형성된다.When the crystal growth is performed using the MOCVD method, the growth rate is high in the order of (111) plane> (110) plane> (100) plane, so that the cladding layer 4 is etched as described above, When the current limiting layer 5 is grown, the upper part of the inclined surface becomes the (110) plane, and the growth rate is slower than that of the (111) plane, thereby forming a current limiting layer 5 having a flat surface as shown in the drawing.

이어 상기 형성된 전류제한층(5)위에 제2도전형의 캡층(6)을 형성한다.Subsequently, a cap layer 6 of the second conductive type is formed on the formed current limiting layer 5.

본 발명은 상술한 메사형태뿐 아니라 V홈(Groove)형태등 식각에 의해 (111)면이 생기는 경사면을 갖는 모든 구조에 적용할 수 있다.The present invention can be applied to any structure having an inclined surface in which the (111) plane is formed by etching as well as the mesa shape described above as well as the V groove shape.

또한 본 발명은 제3도에 도시된 바와같이 경사면(110)면이 2번 노출되도록 클래드층(4)을 식각하는 것도 가능하며, 이 경우에는 더욱 평평한 표면을 얻을 수 있다.In addition, in the present invention, as shown in FIG. 3, the cladding layer 4 may be etched so that the inclined surface 110 is exposed twice. In this case, a flatter surface may be obtained.

본 발명은 GaAs/AlGaAs계뿐 아니라, InGaAIP/InGaP계, CdZnSe계등 MOCVD를 이용하면 모든 레이저다이오드 제조에 적용할 수 있다.The present invention can be applied to all laser diode manufacturing using MOCVD as well as GaAs / AlGaAs system, InGaAIP / InGaP system, CdZnSe system and the like.

이상 상술한 바와 같이 본 발명에 의하면, 전류제한층의 표면을 평평하게 형성할 수 있을뿐 아니라, 클래드층과의 계면에 결함이 발생되지 않게 되므로 소자의 신뢰성을 확보할 수 있으며, 평평한 표면으로 인해 소자의 조립도 용이해진다.As described above, according to the present invention, not only the surface of the current limiting layer can be formed flat, but also defects are not generated at the interface with the clad layer, thereby ensuring the reliability of the device. Assembly of the device also becomes easy.

Claims (4)

제1도전형의 기판(1)상에 제1도전형의 클래드층(2), 활성층(3) 및 제2도전형의 클래드층(4)을 차례로 형성하는 공정과, 상기 제2도전형의 클래드층(4)의 소정부분을 식각하여 중앙부분에 경사면 (111)면 및 (110)면을 갖는 요철부를 형성하는 공정, 및 상기 요철부를 갖는 제2도전형의 클래드층(4)상에 전류제한층(5)을 에피택셜 성장시키는 공정을 포함하는 것을 특징으로 하는 레이저다이오드 제조방법.A step of sequentially forming a clad layer 2 of the first conductive type, an active layer 3, and a clad layer 4 of the second conductive type on the first conductive type substrate 1, and the second conductive type of Etching a predetermined portion of the cladding layer 4 to form an uneven portion having inclined surfaces 111 and 110 in its central portion, and a current on the clad layer 4 of the second conductive type having the uneven portion And a step of epitaxially growing the limiting layer (5). 제1항에 있어서, 상기 요철부의 경사면이 (111)면 및 (110)을 갖도록 제2도전형의 클래드층(4)을 식각하는 공정은 HCL : H2O2: H2O=40 : 4 : 1의 식각액을 이용하여 행하는 것을 특징으로 하는 레이저다이오드 제조방법.The process of etching the clad layer 4 of the second conductive type so that the inclined surface of the uneven portion has (111) planes and (110) is HCL: H 2 O 2 : H 2 O = 40: 4 : A method of manufacturing a laser diode, characterized by performing using an etchant of 1. 제1항에 있어서, 상기 요철부는 메사(Mesa)형태 또는 V홈 형태를 가짐을 특징으로 하는 레이저다이오드 제조방법.The method of claim 1, wherein the uneven portion has a mesa shape or a V groove shape. 제1항에 있어서, 상기 전류제한층은 MOCVD방법에 의해 성장시킴을 특징으로 하는 레이저다이오드 제조방법.The method of claim 1, wherein the current limiting layer is grown by MOCVD.
KR1019930031532A 1993-12-30 1993-12-30 Manufacture for laser diode KR970003749B1 (en)

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KR1019930031532A KR970003749B1 (en) 1993-12-30 1993-12-30 Manufacture for laser diode

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KR950021916A KR950021916A (en) 1995-07-26
KR970003749B1 true KR970003749B1 (en) 1997-03-21

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