JPS5478683A - Manufacture of semiconductor laser - Google Patents

Manufacture of semiconductor laser

Info

Publication number
JPS5478683A
JPS5478683A JP14625377A JP14625377A JPS5478683A JP S5478683 A JPS5478683 A JP S5478683A JP 14625377 A JP14625377 A JP 14625377A JP 14625377 A JP14625377 A JP 14625377A JP S5478683 A JPS5478683 A JP S5478683A
Authority
JP
Japan
Prior art keywords
layer
type
heat treatment
region
type gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14625377A
Other languages
Japanese (ja)
Inventor
Katsuhiko Nishida
Shinsuke Ueno
Rangu.Roi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14625377A priority Critical patent/JPS5478683A/en
Publication of JPS5478683A publication Critical patent/JPS5478683A/en
Pending legal-status Critical Current

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Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To control a diffusion depth with high precision by providing a striped impurity region, shallow enough not to reach an active layer, to a semiconductor wafer previously and by carrying out a high-temperature heat treatment after irradiating the region with ion particles over a heat treatment.
CONSTITUTION: On N-type GaAs substrate 10, N-type Al0.3Ga0.7As layer 11, N-type GaAs active layer 12, P-type Al0.3Ga0.7 layer 13, and N-type GaAs layer 14 are stacked and liquid-phase-epitaxy-grown. Next, SiO2 film 15 is adhered onto layer 14, striped grooves perpendicular to the cleavage surface are provided by using a photo resist, and Zn is diffused through them to form region 16 whose edge 17 stays inside layer 13. Then, film 15 is removed, metal-wire masks 18 are mounted at intervals perpendicular to grooves, and protons are applied over a heat treatment of 500°C until they reach layer 11. Next, they are annealed at 550°C for about 15 minutes to recover damages from the irradiation and after mask 18 is removed, P-type and N-type electrodes 20 and 21 are fitted and cleaved, thereby obtaining individual lasers.
COPYRIGHT: (C)1979,JPO&Japio
JP14625377A 1977-12-05 1977-12-05 Manufacture of semiconductor laser Pending JPS5478683A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14625377A JPS5478683A (en) 1977-12-05 1977-12-05 Manufacture of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14625377A JPS5478683A (en) 1977-12-05 1977-12-05 Manufacture of semiconductor laser

Publications (1)

Publication Number Publication Date
JPS5478683A true JPS5478683A (en) 1979-06-22

Family

ID=15403551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14625377A Pending JPS5478683A (en) 1977-12-05 1977-12-05 Manufacture of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5478683A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002261387A (en) * 2001-02-28 2002-09-13 Sharp Corp Semiconductor laser element and its fabricating method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002261387A (en) * 2001-02-28 2002-09-13 Sharp Corp Semiconductor laser element and its fabricating method

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