JPS5478683A - Manufacture of semiconductor laser - Google Patents
Manufacture of semiconductor laserInfo
- Publication number
- JPS5478683A JPS5478683A JP14625377A JP14625377A JPS5478683A JP S5478683 A JPS5478683 A JP S5478683A JP 14625377 A JP14625377 A JP 14625377A JP 14625377 A JP14625377 A JP 14625377A JP S5478683 A JPS5478683 A JP S5478683A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- heat treatment
- region
- type gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE: To control a diffusion depth with high precision by providing a striped impurity region, shallow enough not to reach an active layer, to a semiconductor wafer previously and by carrying out a high-temperature heat treatment after irradiating the region with ion particles over a heat treatment.
CONSTITUTION: On N-type GaAs substrate 10, N-type Al0.3Ga0.7As layer 11, N-type GaAs active layer 12, P-type Al0.3Ga0.7 layer 13, and N-type GaAs layer 14 are stacked and liquid-phase-epitaxy-grown. Next, SiO2 film 15 is adhered onto layer 14, striped grooves perpendicular to the cleavage surface are provided by using a photo resist, and Zn is diffused through them to form region 16 whose edge 17 stays inside layer 13. Then, film 15 is removed, metal-wire masks 18 are mounted at intervals perpendicular to grooves, and protons are applied over a heat treatment of 500°C until they reach layer 11. Next, they are annealed at 550°C for about 15 minutes to recover damages from the irradiation and after mask 18 is removed, P-type and N-type electrodes 20 and 21 are fitted and cleaved, thereby obtaining individual lasers.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14625377A JPS5478683A (en) | 1977-12-05 | 1977-12-05 | Manufacture of semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14625377A JPS5478683A (en) | 1977-12-05 | 1977-12-05 | Manufacture of semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5478683A true JPS5478683A (en) | 1979-06-22 |
Family
ID=15403551
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14625377A Pending JPS5478683A (en) | 1977-12-05 | 1977-12-05 | Manufacture of semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5478683A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002261387A (en) * | 2001-02-28 | 2002-09-13 | Sharp Corp | Semiconductor laser element and its fabricating method |
-
1977
- 1977-12-05 JP JP14625377A patent/JPS5478683A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002261387A (en) * | 2001-02-28 | 2002-09-13 | Sharp Corp | Semiconductor laser element and its fabricating method |
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