JPS5468188A - Production of semiconductor laser - Google Patents

Production of semiconductor laser

Info

Publication number
JPS5468188A
JPS5468188A JP13551477A JP13551477A JPS5468188A JP S5468188 A JPS5468188 A JP S5468188A JP 13551477 A JP13551477 A JP 13551477A JP 13551477 A JP13551477 A JP 13551477A JP S5468188 A JPS5468188 A JP S5468188A
Authority
JP
Japan
Prior art keywords
layer
film
sio
thickness
approximately
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13551477A
Other languages
Japanese (ja)
Other versions
JPS6125233B2 (en
Inventor
Shinsuke Ueno
Katsuhiko Nishida
Rangu.Roi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13551477A priority Critical patent/JPS5468188A/en
Publication of JPS5468188A publication Critical patent/JPS5468188A/en
Publication of JPS6125233B2 publication Critical patent/JPS6125233B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To diffuse Zn selectively only into a prescribed part of the impurity diffusion region.
CONSTITUTION: Approximately 3 μm-thickness n-type Al0.3Ga0.7 layer 11, approximately 0.2 μm-thickness n-type GaAs active layer 12, approximately 2 μm-thickness P-type Al03Ga0.7As layer 13 and approximately 1 μm-thickness n-type GaAs layer 14 are grown on n-type GaAs substrate 10 by the liquid phase growing method. Zn 16 is diffused at 600°C through 15 μm-width and 250 μm-interval stripes which are opened in SiO2 film 15, which is caused to adhere onto the fourth layer, in the direction vertical to the cleavage plane by the photo resistor technique, and diffusion front 17 is controlled in the halfway position of the third layer. Next, SiO2 film 15 is removed; and after a SiO2 film as a dielectric film is caused to adhere onto all the surface with a thickness of 3000Å, a SiO2 stripe-shaped film is formed across the stripe. This wafer is sealed in a quartz ampul in a vaccum degree below 10-6Torr and is subjected to heat treatment for three hours in the furnace at 750°C, so that Zn in the part except the SiO2 film is diffused rapidly and the front reaches the first layer.
COPYRIGHT: (C)1979,JPO&Japio
JP13551477A 1977-11-10 1977-11-10 Production of semiconductor laser Granted JPS5468188A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13551477A JPS5468188A (en) 1977-11-10 1977-11-10 Production of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13551477A JPS5468188A (en) 1977-11-10 1977-11-10 Production of semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5468188A true JPS5468188A (en) 1979-06-01
JPS6125233B2 JPS6125233B2 (en) 1986-06-14

Family

ID=15153534

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13551477A Granted JPS5468188A (en) 1977-11-10 1977-11-10 Production of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5468188A (en)

Also Published As

Publication number Publication date
JPS6125233B2 (en) 1986-06-14

Similar Documents

Publication Publication Date Title
Tsang et al. Growth of GaAs‐Ga1− x Al x As over preferentially etched channels by molecular beam epitaxy: A technique for two‐dimensional thin‐film definition
JPS54154977A (en) Semiconductor device and its manufacture
JPS54152878A (en) Structure of semiconductor laser element and its manufacture
JPS5468188A (en) Production of semiconductor laser
JPS54152879A (en) Structure of semiconductor laser element and its manufacture
JPS5468187A (en) Producting of semiconductor laser
JPS5574195A (en) Manufacturing semiconductor laser
JPS6215876A (en) Manufacture of semiconductor light emitting device
JPS55165689A (en) Preparation of light emission semiconductor device
JPS5724591A (en) Manufacture of semiconductor laser device
JPS55115375A (en) Light detector element
JPS5712588A (en) Manufacture of buried type heterojunction laser element
JPS5654086A (en) Manufacture of semiconductor laser apparatus
JPS54128268A (en) Multi-diffusion method of impurity
Feldman et al. Liquid phase epitaxial growth of InGaAsP and InP on mesa-patterned InP substrates
JPS5534482A (en) Manufacturing method for semiconductor laser
JPS6164183A (en) Manufacture of semiconductor light-emitting element
JPS54106174A (en) Semiconductor device and its manufacture
JPS54115087A (en) Double hetero junction laser of stripe type
JPS6422072A (en) Manufacture of pin type semiconductor photodetector
JPS6468979A (en) Formation of light emitting device using gaalas wafer
JPS5478683A (en) Manufacture of semiconductor laser
JPS5478682A (en) Manufactre of semiconductor laser
JPS6421990A (en) Manufacture of semiconductor light-emitting device
JPH02264489A (en) Manufacture of buried type semiconductor device