JPS5577166A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5577166A
JPS5577166A JP15137178A JP15137178A JPS5577166A JP S5577166 A JPS5577166 A JP S5577166A JP 15137178 A JP15137178 A JP 15137178A JP 15137178 A JP15137178 A JP 15137178A JP S5577166 A JPS5577166 A JP S5577166A
Authority
JP
Japan
Prior art keywords
type
fet
resistance
source
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15137178A
Other languages
Japanese (ja)
Inventor
Yoshiki Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP15137178A priority Critical patent/JPS5577166A/en
Publication of JPS5577166A publication Critical patent/JPS5577166A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain distortion-free and stable input-and-output characteristics by connecting a resistance element to the source of an FET on the same substrate. CONSTITUTION:When n<+>-type drain and source regions 3 and 4, an n<+>-type source electrode S lead-out layer and an n<->-type resistance layer R are formed on a p-type substrate 2, an internal feedback type FET is formed. In this mechanism, voltage appearing across the two ends of the resistance R becomes a backward bias to gate electrode and operates so that negative feedback is applied at all times. As a result, the FET device's characteristics will be improved upon the square law of input-and- output transfer characteristics, and therefore, a stable device of good linear characteristics can be obtained.
JP15137178A 1978-12-06 1978-12-06 Semiconductor device Pending JPS5577166A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15137178A JPS5577166A (en) 1978-12-06 1978-12-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15137178A JPS5577166A (en) 1978-12-06 1978-12-06 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5577166A true JPS5577166A (en) 1980-06-10

Family

ID=15517085

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15137178A Pending JPS5577166A (en) 1978-12-06 1978-12-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5577166A (en)

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