JPS642364A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS642364A JPS642364A JP15834487A JP15834487A JPS642364A JP S642364 A JPS642364 A JP S642364A JP 15834487 A JP15834487 A JP 15834487A JP 15834487 A JP15834487 A JP 15834487A JP S642364 A JPS642364 A JP S642364A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- source
- gainas
- gate
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To lower source resistance, to remove the limitation of a short channel effect and to manufacture an SISFET and a MISFET having a short channel with high accuracy by forming source and drain regions by the same semiconductor layer and dividing the source and drain regions by a second conductor layer (an insulating layer) brought into contact with a first semiconductor layer.
CONSTITUTION: An undoped GaInAs layer 2 having a narrow band gap as a channel forming layer is epitaxial-grown onto a semi-insulating InP substrate 1 and an n+-GaInAs layer 13 in specified thickness as a source region and a drain region onto the layer 2. The layer 13 corresponding to a gate is etched selectively, and etched so as to be intruded into the layer 2. The source region 14 and the drain region 15 are shaped through said etching. An undoped AlInAs layer 3 as an insulating layer and an n+-GaInAs layer 4 having specified thickness as a gate electrode are grown through second epitaxial growth, and a photo-resist 18 is buried into a recessed section 17 corresponding to a gate section of the layer 4.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62-158344A JPH012364A (en) | 1987-06-25 | semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62-158344A JPH012364A (en) | 1987-06-25 | semiconductor equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS642364A true JPS642364A (en) | 1989-01-06 |
| JPH012364A JPH012364A (en) | 1989-01-06 |
Family
ID=
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