JPS5732623A - Fabricating method of semiconductor device - Google Patents
Fabricating method of semiconductor deviceInfo
- Publication number
- JPS5732623A JPS5732623A JP10729280A JP10729280A JPS5732623A JP S5732623 A JPS5732623 A JP S5732623A JP 10729280 A JP10729280 A JP 10729280A JP 10729280 A JP10729280 A JP 10729280A JP S5732623 A JPS5732623 A JP S5732623A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- layer
- oxide layer
- silicon oxide
- polycrystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 6
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 abstract 1
- 239000005977 Ethylene Substances 0.000 abstract 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 235000011149 sulphuric acid Nutrition 0.000 abstract 1
- 239000001117 sulphuric acid Substances 0.000 abstract 1
- WYXIGTJNYDDFFH-UHFFFAOYSA-Q triazanium;borate Chemical compound [NH4+].[NH4+].[NH4+].[O-]B([O-])[O-] WYXIGTJNYDDFFH-UHFFFAOYSA-Q 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
Abstract
PURPOSE:To fabricate a self-matching polycrystal pattern by a method wherein a silicon a silicon nitride film on a polycrystal silicon layer formed over an opening aperture area is deposited and anodized partly to change to a silicon oxide layer, and the whole device is etched besides this silicon oxide layer as a mask. CONSTITUTION:A silicon oxide layer 102 is formed on a silicon substrate 101, and an opening 103 is provided. Then, a polycrystal layer 104 and a silicon nitride layer 300Angstrom -500Angstrom thick is set up, and a silicon nitride layer 105 on the opening is anodized in the solution of ethylene glycolic ammonium borate family to change to a silicon oxide layer 106. Subsequently, using this silicon oxide layer 106 as the mask, it is etched in a thermal sulphuric acid family solution only for the part of the silicon nitride layer. Furthermore, removing the polycrystal nitride layer 104 selectively by etching except the mask of the silicon oxide layer 106 the desired pattern of polycrystalline silicon layer 104 is remained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10729280A JPS5732623A (en) | 1980-08-05 | 1980-08-05 | Fabricating method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10729280A JPS5732623A (en) | 1980-08-05 | 1980-08-05 | Fabricating method of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5732623A true JPS5732623A (en) | 1982-02-22 |
Family
ID=14455395
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10729280A Pending JPS5732623A (en) | 1980-08-05 | 1980-08-05 | Fabricating method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5732623A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5895285U (en) * | 1981-12-18 | 1983-06-28 | 大平洋機工株式会社 | Solidification treatment equipment for powdered waste |
-
1980
- 1980-08-05 JP JP10729280A patent/JPS5732623A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5895285U (en) * | 1981-12-18 | 1983-06-28 | 大平洋機工株式会社 | Solidification treatment equipment for powdered waste |
| JPS6134079Y2 (en) * | 1981-12-18 | 1986-10-04 |
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