JPS6439040A - Formation of contact hole - Google Patents

Formation of contact hole

Info

Publication number
JPS6439040A
JPS6439040A JP19487787A JP19487787A JPS6439040A JP S6439040 A JPS6439040 A JP S6439040A JP 19487787 A JP19487787 A JP 19487787A JP 19487787 A JP19487787 A JP 19487787A JP S6439040 A JPS6439040 A JP S6439040A
Authority
JP
Japan
Prior art keywords
insulating film
etching
contact hole
reactive ion
resist layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19487787A
Other languages
Japanese (ja)
Inventor
Shoji Sakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP19487787A priority Critical patent/JPS6439040A/en
Publication of JPS6439040A publication Critical patent/JPS6439040A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent damage due to reactive ion etching by anisotropically etching an insulating film on the substrate surface except to a part thereof. CONSTITUTION:By coating silicon oxide insulating film 2 on a semiconductor substrate 1 which forms a requested element area with a resist layer 3, the part where a contact hole is formed is removed by photoetching. Then, by performing anisotropic etching with a resist layer 3 as a mask, a recess part 4 is formed leaving a part of an insulating film 2. Then, after removing the resist layer 3, a deposited insulating film 5 is adhered. Then a deposited insulating film 5 is etched by reactive ion etching and a sidewall layer 7 is formed on the sidewall of a contact hole 6. The insulating film 2 remaining at this time is also removed by etching simultaneously. Furthermore, after sputtering an aluminum layer on the entire surface, an aluminum electrode 8 is formed by patterning. It prevents damage due to reactive ion etching.
JP19487787A 1987-08-04 1987-08-04 Formation of contact hole Pending JPS6439040A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19487787A JPS6439040A (en) 1987-08-04 1987-08-04 Formation of contact hole

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19487787A JPS6439040A (en) 1987-08-04 1987-08-04 Formation of contact hole

Publications (1)

Publication Number Publication Date
JPS6439040A true JPS6439040A (en) 1989-02-09

Family

ID=16331799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19487787A Pending JPS6439040A (en) 1987-08-04 1987-08-04 Formation of contact hole

Country Status (1)

Country Link
JP (1) JPS6439040A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04364034A (en) * 1991-06-11 1992-12-16 Mitsubishi Electric Corp Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60227422A (en) * 1984-04-26 1985-11-12 Nec Corp Manufacture of semiconductor device
JPS6286715A (en) * 1985-10-11 1987-04-21 Matsushita Electronics Corp Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60227422A (en) * 1984-04-26 1985-11-12 Nec Corp Manufacture of semiconductor device
JPS6286715A (en) * 1985-10-11 1987-04-21 Matsushita Electronics Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04364034A (en) * 1991-06-11 1992-12-16 Mitsubishi Electric Corp Manufacture of semiconductor device

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