JPS6439040A - Formation of contact hole - Google Patents
Formation of contact holeInfo
- Publication number
- JPS6439040A JPS6439040A JP19487787A JP19487787A JPS6439040A JP S6439040 A JPS6439040 A JP S6439040A JP 19487787 A JP19487787 A JP 19487787A JP 19487787 A JP19487787 A JP 19487787A JP S6439040 A JPS6439040 A JP S6439040A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- etching
- contact hole
- reactive ion
- resist layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent damage due to reactive ion etching by anisotropically etching an insulating film on the substrate surface except to a part thereof. CONSTITUTION:By coating silicon oxide insulating film 2 on a semiconductor substrate 1 which forms a requested element area with a resist layer 3, the part where a contact hole is formed is removed by photoetching. Then, by performing anisotropic etching with a resist layer 3 as a mask, a recess part 4 is formed leaving a part of an insulating film 2. Then, after removing the resist layer 3, a deposited insulating film 5 is adhered. Then a deposited insulating film 5 is etched by reactive ion etching and a sidewall layer 7 is formed on the sidewall of a contact hole 6. The insulating film 2 remaining at this time is also removed by etching simultaneously. Furthermore, after sputtering an aluminum layer on the entire surface, an aluminum electrode 8 is formed by patterning. It prevents damage due to reactive ion etching.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19487787A JPS6439040A (en) | 1987-08-04 | 1987-08-04 | Formation of contact hole |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19487787A JPS6439040A (en) | 1987-08-04 | 1987-08-04 | Formation of contact hole |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6439040A true JPS6439040A (en) | 1989-02-09 |
Family
ID=16331799
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19487787A Pending JPS6439040A (en) | 1987-08-04 | 1987-08-04 | Formation of contact hole |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6439040A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04364034A (en) * | 1991-06-11 | 1992-12-16 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60227422A (en) * | 1984-04-26 | 1985-11-12 | Nec Corp | Manufacture of semiconductor device |
JPS6286715A (en) * | 1985-10-11 | 1987-04-21 | Matsushita Electronics Corp | Manufacture of semiconductor device |
-
1987
- 1987-08-04 JP JP19487787A patent/JPS6439040A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60227422A (en) * | 1984-04-26 | 1985-11-12 | Nec Corp | Manufacture of semiconductor device |
JPS6286715A (en) * | 1985-10-11 | 1987-04-21 | Matsushita Electronics Corp | Manufacture of semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04364034A (en) * | 1991-06-11 | 1992-12-16 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
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