JPS6439027A - Formation of electrode - Google Patents

Formation of electrode

Info

Publication number
JPS6439027A
JPS6439027A JP19488087A JP19488087A JPS6439027A JP S6439027 A JPS6439027 A JP S6439027A JP 19488087 A JP19488087 A JP 19488087A JP 19488087 A JP19488087 A JP 19488087A JP S6439027 A JPS6439027 A JP S6439027A
Authority
JP
Japan
Prior art keywords
resist layer
insulating film
metal wiring
wiring layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19488087A
Other languages
Japanese (ja)
Other versions
JP2983543B2 (en
Inventor
Shoji Sakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP62194880A priority Critical patent/JP2983543B2/en
Publication of JPS6439027A publication Critical patent/JPS6439027A/en
Application granted granted Critical
Publication of JP2983543B2 publication Critical patent/JP2983543B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To improve the resolution of a resist layer for assuring a fine pattern metal wiring layer by covering an electrode wiring layer with an insulating film having a greater ratio of etching selection, and removing the resist layer by etching with use of both the resist layer and insulating film as a mask. CONSTITUTION:There are laminated in succession a metal wiring layer 3 with aluminum deposited by sputtering on an oxide film 2 covering a semiconductor substrate 1 surface therewith, an insulating film 4 having a greater ratio of etching selection to aluminum covering the metal wiring layer 3 therewith, and a patterned resist layer 5 deposited on the insulating film 4. Then, the insulating film 4 is dry-etched with use of the resist layer 5 as a mask. Moreover, the metal wiring layer 3 is etched with use of the resist layer 5 and the insulating film 4 as a mask. Thus, resolution of the resist layer is improved, thereby assuring a fine pattern metal wiring layer followed by a simplified removal process of the resist layer.
JP62194880A 1987-08-04 1987-08-04 Electrode formation method Expired - Lifetime JP2983543B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62194880A JP2983543B2 (en) 1987-08-04 1987-08-04 Electrode formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62194880A JP2983543B2 (en) 1987-08-04 1987-08-04 Electrode formation method

Publications (2)

Publication Number Publication Date
JPS6439027A true JPS6439027A (en) 1989-02-09
JP2983543B2 JP2983543B2 (en) 1999-11-29

Family

ID=16331853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62194880A Expired - Lifetime JP2983543B2 (en) 1987-08-04 1987-08-04 Electrode formation method

Country Status (1)

Country Link
JP (1) JP2983543B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006080276A1 (en) * 2005-01-28 2006-08-03 Ulvac, Inc. Capacitance element manufacturing method and etching method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006080276A1 (en) * 2005-01-28 2006-08-03 Ulvac, Inc. Capacitance element manufacturing method and etching method
JPWO2006080276A1 (en) * 2005-01-28 2008-06-19 株式会社アルバック Capacitance element manufacturing method, etching method
DE112006000261B4 (en) * 2005-01-28 2014-05-08 Ulvac, Inc. Method for producing a capacitive element by means of etching

Also Published As

Publication number Publication date
JP2983543B2 (en) 1999-11-29

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term