JPS5638476A - Etching method of thick film - Google Patents

Etching method of thick film

Info

Publication number
JPS5638476A
JPS5638476A JP11410279A JP11410279A JPS5638476A JP S5638476 A JPS5638476 A JP S5638476A JP 11410279 A JP11410279 A JP 11410279A JP 11410279 A JP11410279 A JP 11410279A JP S5638476 A JPS5638476 A JP S5638476A
Authority
JP
Japan
Prior art keywords
thick film
film
resist film
unnecessary portion
org
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11410279A
Other languages
Japanese (ja)
Other versions
JPS5915510B2 (en
Inventor
Ikuo Tomita
Tateo Sugano
Yutaka Watanabe
Hisayasu Matsuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP54114102A priority Critical patent/JPS5915510B2/en
Publication of JPS5638476A publication Critical patent/JPS5638476A/en
Publication of JPS5915510B2 publication Critical patent/JPS5915510B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To form minute thick film patterns, by a metod wherein a thick film and a photoresist layer insoluble in an org. solvent are formed on a substrate and the resist film corresponding to an unnecessary portion of the thick film is removed by exposing and developing and, thereafter, etching is carried out by a solution containing terpineol in a predetermined cocn.
CONSTITUTION: A thick film 2 and a resist film 3 insoluble in an org. solvent are formed on an insulating substrate 1. In order to remove an unnesessary portion of the thick film 2, the resist film 3 is exposed and developed to remove the resist film 3 corresponding to the unnesessary portion of the thick film 2 to expose the unnecessary portion. Subsequently, the unnecessary portion of the thick film is etched. To carry out this etching procedure, an etching solution of an org. solvent containing 5W100% of terpineol (containing α-,β- and γ-isomer mixture) is immersed in a spongelike member and puffed or sprayed and blowed on under high pressure to melt and remove said unnecessary portion. By peeling and baking the resist film 3 remaining on the thick film 2, the highly accurate patterning is easily carried out.
COPYRIGHT: (C)1981,JPO&Japio
JP54114102A 1979-09-07 1979-09-07 Thick film etching method Expired JPS5915510B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54114102A JPS5915510B2 (en) 1979-09-07 1979-09-07 Thick film etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54114102A JPS5915510B2 (en) 1979-09-07 1979-09-07 Thick film etching method

Publications (2)

Publication Number Publication Date
JPS5638476A true JPS5638476A (en) 1981-04-13
JPS5915510B2 JPS5915510B2 (en) 1984-04-10

Family

ID=14629163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54114102A Expired JPS5915510B2 (en) 1979-09-07 1979-09-07 Thick film etching method

Country Status (1)

Country Link
JP (1) JPS5915510B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008171790A (en) * 2007-01-08 2008-07-24 Tatung Co Manufacturing method of field emission element spacer, and spacer base material

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5382189A (en) * 1976-12-27 1978-07-20 Hamasawa Kogyo:Kk Solar cell
JPS5461887A (en) * 1977-10-26 1979-05-18 Sharp Corp Solar battery device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5382189A (en) * 1976-12-27 1978-07-20 Hamasawa Kogyo:Kk Solar cell
JPS5461887A (en) * 1977-10-26 1979-05-18 Sharp Corp Solar battery device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008171790A (en) * 2007-01-08 2008-07-24 Tatung Co Manufacturing method of field emission element spacer, and spacer base material

Also Published As

Publication number Publication date
JPS5915510B2 (en) 1984-04-10

Similar Documents

Publication Publication Date Title
JPS5548935A (en) Forming of electrode pattern
JPS5569265A (en) Pattern-forming method
JPS5669835A (en) Method for forming thin film pattern
JPS5638476A (en) Etching method of thick film
JPS57183030A (en) Manufacture of semiconductor device
JPS5494881A (en) Exposure method
JPS5623746A (en) Manufacture of semiconductor device
JPS5414165A (en) Selective oxidation method for semiconductor substrate
JPS56137632A (en) Pattern forming
GB1535995A (en) Photolithographic production of resistance elements
JPS5541728A (en) Pattern formation by thick film paste
US4042387A (en) Photolithographic method of making microcircuits using glycerine in photoresist stripping solution
JPS5277671A (en) Method and equipment of masking
JPS5557229A (en) Method for forming patterned conductor layer
JPS5516466A (en) Photoetching method
JPS55162232A (en) Forming thin film pattern
JPS558013A (en) Semiconductor device manufacturing method
JPS5572052A (en) Preparation of semiconductor device
JPS52127173A (en) Pattern formation method
JPS6425552A (en) Pattern forming method
JPS5461876A (en) Etching method of insulation film of semiconductor device
JPS5427367A (en) Manufacture of microwave circuit pattern
JPS53128279A (en) Production of semiconductor device
JPS57118641A (en) Lifting-off method
JPS5518096A (en) Manufacture of semiconductor device