JPS6425552A - Pattern forming method - Google Patents
Pattern forming methodInfo
- Publication number
- JPS6425552A JPS6425552A JP18105487A JP18105487A JPS6425552A JP S6425552 A JPS6425552 A JP S6425552A JP 18105487 A JP18105487 A JP 18105487A JP 18105487 A JP18105487 A JP 18105487A JP S6425552 A JPS6425552 A JP S6425552A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- conductor film
- resist
- thereafter
- resist pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To perform highly accurate patterning at a good yield rate, by protecting the corrosion of a first conductor film due to chemical etching of a second conductor film by the inverted pattern of a first resist pattern, i.e., the mask pattern of the second conductor film. CONSTITUTION:The pattern of a first conductor film (e.g., Al) 2 is formed on a substrate 1. A first resist pattern 3 is formed on the film 2. Thereafter, a second conductor film 4 is attached on the substrate 1. Then, a second resist pattern 5 is formed on the second conductor film 4. Thereafter, the device is immersed into aqua-regia based solution. The second conductor film 4 at the exposed part is removed. Then the first resist pattern 3 and the second resist pattern 5 are dissolved and removed with a resist stripper. Thereafter, the device is washed with methanol. The resist stripper is dissolved and removed. Only a second conductor film pattern 3' is made to remain. The pattern of the second conductor film is formed on the first conductor film pattern 1. Thus the minute pattern can be obtained highly accurately at a good yield rate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18105487A JPS6425552A (en) | 1987-07-22 | 1987-07-22 | Pattern forming method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18105487A JPS6425552A (en) | 1987-07-22 | 1987-07-22 | Pattern forming method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6425552A true JPS6425552A (en) | 1989-01-27 |
Family
ID=16093970
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18105487A Pending JPS6425552A (en) | 1987-07-22 | 1987-07-22 | Pattern forming method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6425552A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5230319A (en) * | 1990-10-05 | 1993-07-27 | Toyota Jidosha Kabushiki Kaisha | Apparatus for detecting malfunction in evaporated fuel purge system |
US5237979A (en) * | 1991-09-02 | 1993-08-24 | Toyota Jidosha Kabushiki Kaisha | Evaporative fuel control apparatus of internal combustion engine |
-
1987
- 1987-07-22 JP JP18105487A patent/JPS6425552A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5230319A (en) * | 1990-10-05 | 1993-07-27 | Toyota Jidosha Kabushiki Kaisha | Apparatus for detecting malfunction in evaporated fuel purge system |
US5237979A (en) * | 1991-09-02 | 1993-08-24 | Toyota Jidosha Kabushiki Kaisha | Evaporative fuel control apparatus of internal combustion engine |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5548935A (en) | Forming of electrode pattern | |
JPS5669835A (en) | Method for forming thin film pattern | |
JPS6425552A (en) | Pattern forming method | |
JPS57193031A (en) | Manufacture of mask substrate for exposing x-ray | |
JPS57202535A (en) | Formation of negative resist pattern | |
JPS53123089A (en) | Production of semiconductor device | |
JPS6421450A (en) | Production of mask | |
JPS6411399A (en) | Etching of thin film pattern | |
JPS5541721A (en) | Carrier tape for semiconductor device | |
JPS56155551A (en) | Semiconductor device | |
JPS53101975A (en) | Treating method of semiconductor substrates | |
JPS5678141A (en) | Method of forming electrode for semiconductor device | |
JPS5638476A (en) | Etching method of thick film | |
JPS5329673A (en) | Production of semiconductor device | |
JPS5622428A (en) | Polyimide pattern forming method | |
JPS56296A (en) | Production of watch or clock dial plate | |
JPS53128279A (en) | Production of semiconductor device | |
JPS57135745A (en) | Method of etching thin films of ceric oxide | |
JPS57202737A (en) | Formation of minute structure | |
JPS52127174A (en) | Minute patern formation method | |
JPS5459082A (en) | Double-sided pattern forming method for semiconductor wafer | |
JPS57204157A (en) | Manufacture of wiring section for mounting chip | |
JPS57211785A (en) | Electrode formation of semiconductor device | |
JPS56108880A (en) | Selectively etching method for silicon oxide film | |
JPS5478661A (en) | Manufacture of metal projection |