JPS5461876A - Etching method of insulation film of semiconductor device - Google Patents
Etching method of insulation film of semiconductor deviceInfo
- Publication number
- JPS5461876A JPS5461876A JP12900477A JP12900477A JPS5461876A JP S5461876 A JPS5461876 A JP S5461876A JP 12900477 A JP12900477 A JP 12900477A JP 12900477 A JP12900477 A JP 12900477A JP S5461876 A JPS5461876 A JP S5461876A
- Authority
- JP
- Japan
- Prior art keywords
- insulation film
- etched
- film
- overhungs
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To smooth the serrations of the etched side walls of insulation film simply by adding a simple process.
CONSTITUTION: When a photo resist mask 3 is provided on the insulation film 1 of a Si substrate 2 and the film 1 is etched, overhungs 3a are produced. Since the overhungs 3a are likely to be slightly developed owing to turning about of light at the time of exposure, redeveloping causes the end face to retreat (t), thus magnifying the etched hole and exposing the side wall end face 1A of the side. Etching again through the photo resist mask 3 causes the sharp edges to be selectively removed, forming side walls 1B, 1B'. Next, the mask is removed and an Al vapor deposition film is formed. These eliminate disconnection becuase the surface is smooth.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52129004A JPS5824949B2 (en) | 1977-10-26 | 1977-10-26 | Insulating film etching method for semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52129004A JPS5824949B2 (en) | 1977-10-26 | 1977-10-26 | Insulating film etching method for semiconductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5461876A true JPS5461876A (en) | 1979-05-18 |
JPS5824949B2 JPS5824949B2 (en) | 1983-05-24 |
Family
ID=14998763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52129004A Expired JPS5824949B2 (en) | 1977-10-26 | 1977-10-26 | Insulating film etching method for semiconductor devices |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5824949B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06120201A (en) * | 1992-10-08 | 1994-04-28 | Ibm Japan Ltd | Wet etching method of semiconductor device |
JP2014132624A (en) * | 2012-12-04 | 2014-07-17 | Nichia Chem Ind Ltd | Semiconductor element manufacturing method |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52126184A (en) * | 1976-04-15 | 1977-10-22 | Sony Corp | Preparation of semiconductor device |
-
1977
- 1977-10-26 JP JP52129004A patent/JPS5824949B2/en not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52126184A (en) * | 1976-04-15 | 1977-10-22 | Sony Corp | Preparation of semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06120201A (en) * | 1992-10-08 | 1994-04-28 | Ibm Japan Ltd | Wet etching method of semiconductor device |
JP2014132624A (en) * | 2012-12-04 | 2014-07-17 | Nichia Chem Ind Ltd | Semiconductor element manufacturing method |
Also Published As
Publication number | Publication date |
---|---|
JPS5824949B2 (en) | 1983-05-24 |
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