JPS5461876A - Etching method of insulation film of semiconductor device - Google Patents

Etching method of insulation film of semiconductor device

Info

Publication number
JPS5461876A
JPS5461876A JP12900477A JP12900477A JPS5461876A JP S5461876 A JPS5461876 A JP S5461876A JP 12900477 A JP12900477 A JP 12900477A JP 12900477 A JP12900477 A JP 12900477A JP S5461876 A JPS5461876 A JP S5461876A
Authority
JP
Japan
Prior art keywords
insulation film
etched
film
overhungs
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12900477A
Other languages
Japanese (ja)
Other versions
JPS5824949B2 (en
Inventor
Koji Fujimoto
Hiroaki Shimizu
Nobuhiro Okuda
Keizo Sakiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP52129004A priority Critical patent/JPS5824949B2/en
Publication of JPS5461876A publication Critical patent/JPS5461876A/en
Publication of JPS5824949B2 publication Critical patent/JPS5824949B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To smooth the serrations of the etched side walls of insulation film simply by adding a simple process.
CONSTITUTION: When a photo resist mask 3 is provided on the insulation film 1 of a Si substrate 2 and the film 1 is etched, overhungs 3a are produced. Since the overhungs 3a are likely to be slightly developed owing to turning about of light at the time of exposure, redeveloping causes the end face to retreat (t), thus magnifying the etched hole and exposing the side wall end face 1A of the side. Etching again through the photo resist mask 3 causes the sharp edges to be selectively removed, forming side walls 1B, 1B'. Next, the mask is removed and an Al vapor deposition film is formed. These eliminate disconnection becuase the surface is smooth.
COPYRIGHT: (C)1979,JPO&Japio
JP52129004A 1977-10-26 1977-10-26 Insulating film etching method for semiconductor devices Expired JPS5824949B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52129004A JPS5824949B2 (en) 1977-10-26 1977-10-26 Insulating film etching method for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52129004A JPS5824949B2 (en) 1977-10-26 1977-10-26 Insulating film etching method for semiconductor devices

Publications (2)

Publication Number Publication Date
JPS5461876A true JPS5461876A (en) 1979-05-18
JPS5824949B2 JPS5824949B2 (en) 1983-05-24

Family

ID=14998763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52129004A Expired JPS5824949B2 (en) 1977-10-26 1977-10-26 Insulating film etching method for semiconductor devices

Country Status (1)

Country Link
JP (1) JPS5824949B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06120201A (en) * 1992-10-08 1994-04-28 Ibm Japan Ltd Wet etching method of semiconductor device
JP2014132624A (en) * 2012-12-04 2014-07-17 Nichia Chem Ind Ltd Semiconductor element manufacturing method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52126184A (en) * 1976-04-15 1977-10-22 Sony Corp Preparation of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52126184A (en) * 1976-04-15 1977-10-22 Sony Corp Preparation of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06120201A (en) * 1992-10-08 1994-04-28 Ibm Japan Ltd Wet etching method of semiconductor device
JP2014132624A (en) * 2012-12-04 2014-07-17 Nichia Chem Ind Ltd Semiconductor element manufacturing method

Also Published As

Publication number Publication date
JPS5824949B2 (en) 1983-05-24

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