JPS5210680A - Method of manufacturing photo-mask for photo etching - Google Patents

Method of manufacturing photo-mask for photo etching

Info

Publication number
JPS5210680A
JPS5210680A JP7175475A JP7175475A JPS5210680A JP S5210680 A JPS5210680 A JP S5210680A JP 7175475 A JP7175475 A JP 7175475A JP 7175475 A JP7175475 A JP 7175475A JP S5210680 A JPS5210680 A JP S5210680A
Authority
JP
Japan
Prior art keywords
photo
mask
etching
manufacturing
photo etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7175475A
Other languages
Japanese (ja)
Other versions
JPS5836494B2 (en
Inventor
Toshio Oguchi
Kyoji Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP50071754A priority Critical patent/JPS5836494B2/en
Priority to US05/613,427 priority patent/US4068018A/en
Publication of JPS5210680A publication Critical patent/JPS5210680A/en
Publication of JPS5836494B2 publication Critical patent/JPS5836494B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE: To obtain an inversion photo-mask for photo-etching with the use of a hard mask per se by driving particles accelerated by high energy in a photo-resist film or other organic film.
COPYRIGHT: (C)1977,JPO&Japio
JP50071754A 1974-09-19 1975-06-13 Mask-no-seizou-houhou Expired JPS5836494B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP50071754A JPS5836494B2 (en) 1975-06-13 1975-06-13 Mask-no-seizou-houhou
US05/613,427 US4068018A (en) 1974-09-19 1975-09-15 Process for preparing a mask for use in manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50071754A JPS5836494B2 (en) 1975-06-13 1975-06-13 Mask-no-seizou-houhou

Publications (2)

Publication Number Publication Date
JPS5210680A true JPS5210680A (en) 1977-01-27
JPS5836494B2 JPS5836494B2 (en) 1983-08-09

Family

ID=13469627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50071754A Expired JPS5836494B2 (en) 1974-09-19 1975-06-13 Mask-no-seizou-houhou

Country Status (1)

Country Link
JP (1) JPS5836494B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848055A (en) * 1981-09-17 1983-03-19 Mizuho Shoji Kk Production of original plate for engraver

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63292004A (en) * 1987-05-25 1988-11-29 Kobe Steel Ltd Positional detection

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848055A (en) * 1981-09-17 1983-03-19 Mizuho Shoji Kk Production of original plate for engraver

Also Published As

Publication number Publication date
JPS5836494B2 (en) 1983-08-09

Similar Documents

Publication Publication Date Title
JPS5394770A (en) Photo mask
JPS52123173A (en) Sputter etching method
JPS5258374A (en) Improvement in sensitivity of positive type photo resist
JPS5210680A (en) Method of manufacturing photo-mask for photo etching
JPS52117558A (en) Soft x-ray exposure mask and its manufacturing method
JPS5373073A (en) Treatment method for photo resist
JPS5339060A (en) Lot number marking method to wafers
JPS52117077A (en) Electron beam-exposing method
JPS5210063A (en) Method for manufacturing electron tube
JPS5272175A (en) Mask patterning of resist meterial
JPS5376757A (en) Photoetching method
JPS5368577A (en) Removing method of positive type photo resist
JPS525270A (en) Photo-mask
JPS5382173A (en) Positioning method
JPS5359368A (en) Plasma etching
JPS5397374A (en) Mask producing method
JPS52152171A (en) Wafer alignment method
JPS52123171A (en) Anisotropic etching method of semiconductor single crystal
JPS5327368A (en) Selective etching method
JPS5255381A (en) Photo exposure method
JPS5211867A (en) Manufacturing method of a semiconductor device
JPS535578A (en) Manufacture of semiconductor device
JPS538082A (en) Production of semiconductor device
JPS5267270A (en) Photo etching method
JPS5440080A (en) Forming method of photo resist film