JPS5558529A - Electron beam exposure - Google Patents

Electron beam exposure

Info

Publication number
JPS5558529A
JPS5558529A JP13244878A JP13244878A JPS5558529A JP S5558529 A JPS5558529 A JP S5558529A JP 13244878 A JP13244878 A JP 13244878A JP 13244878 A JP13244878 A JP 13244878A JP S5558529 A JPS5558529 A JP S5558529A
Authority
JP
Japan
Prior art keywords
resist
sensitivity
electron beams
dose
depth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13244878A
Other languages
Japanese (ja)
Inventor
Takaaki Katou
Yaichiro Watakabe
Tadao Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP13244878A priority Critical patent/JPS5558529A/en
Publication of JPS5558529A publication Critical patent/JPS5558529A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To obtain various patterns like undercut and overcut after development when providing a resist for electron beams on a substrate by building up and sticking resists of more than one kind which are different in sensitivity to electron beams. CONSTITUTION:Two kinds of resist layers 3 and 4 which are different in sensitivity to electron beams are built up and sticked on a substrate 1, an energy is stored in the layers 3 and 4 by irradiating an electorn beam 5 thereto, and only the portion exceeding a critical value is dissolved to produce a resist pattern. The critical value varies according to the kind of resist and the developing conditions: the portion AB on the surface becomes a cut width of the resist when an irradiation indicated by DOSE 1 is given, and the cut width becomes A'B' where the depth is h1. And from giving the irradiation of DOSE 2, cut widths of the surface and the depth h2 are GH and C'D' respectively. Namely, a desired undercut is obtainable through keeping the layer 3 higher in sensitivity than the layer 4.
JP13244878A 1978-10-26 1978-10-26 Electron beam exposure Pending JPS5558529A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13244878A JPS5558529A (en) 1978-10-26 1978-10-26 Electron beam exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13244878A JPS5558529A (en) 1978-10-26 1978-10-26 Electron beam exposure

Publications (1)

Publication Number Publication Date
JPS5558529A true JPS5558529A (en) 1980-05-01

Family

ID=15081589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13244878A Pending JPS5558529A (en) 1978-10-26 1978-10-26 Electron beam exposure

Country Status (1)

Country Link
JP (1) JPS5558529A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05152199A (en) * 1991-11-27 1993-06-18 Nec Kansai Ltd Method for forming resist pattern
KR100675301B1 (en) 2006-01-17 2007-01-29 삼성전자주식회사 Methods of forming pattern using electron beam and cell masks used in electron beam lithography
WO2012121138A1 (en) * 2011-03-09 2012-09-13 シャープ株式会社 Method for forming resist pattern, method for forming wiring pattern, and method for manufacturing active matrix substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53114676A (en) * 1977-03-17 1978-10-06 Toshiba Corp Electron beam exposure method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53114676A (en) * 1977-03-17 1978-10-06 Toshiba Corp Electron beam exposure method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05152199A (en) * 1991-11-27 1993-06-18 Nec Kansai Ltd Method for forming resist pattern
KR100675301B1 (en) 2006-01-17 2007-01-29 삼성전자주식회사 Methods of forming pattern using electron beam and cell masks used in electron beam lithography
WO2012121138A1 (en) * 2011-03-09 2012-09-13 シャープ株式会社 Method for forming resist pattern, method for forming wiring pattern, and method for manufacturing active matrix substrate

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