JPS5573047A - Manufacture of photo mask - Google Patents

Manufacture of photo mask

Info

Publication number
JPS5573047A
JPS5573047A JP14749178A JP14749178A JPS5573047A JP S5573047 A JPS5573047 A JP S5573047A JP 14749178 A JP14749178 A JP 14749178A JP 14749178 A JP14749178 A JP 14749178A JP S5573047 A JPS5573047 A JP S5573047A
Authority
JP
Japan
Prior art keywords
oxygen
mask material
resist
portions
photo mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14749178A
Other languages
Japanese (ja)
Inventor
Hidefumi Nakada
Hiroaki Morimoto
Yaichiro Watakabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14749178A priority Critical patent/JPS5573047A/en
Publication of JPS5573047A publication Critical patent/JPS5573047A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE:To obtain the photo mask of fine patterns with good reproducibility by providing a high polymer material layer on the hard photo mask material layer provided on a glass substrate and subjecting the same to patterning by electron beams, oxygen ion implantation, etching etc. CONSTITUTION:Photo mask material (e.g., chromium) 12 and resist 13 for electron beams are deposited and laminated on a glass substrate 11, thence desired patterns having recesses 15 are formed by electron beams 14 (Figs. b, c). Next, oxygen ion beams 16 are implanted over the entire surface of the mask to have oxygen (oxygen density; 0.01-0.1 or 2.5 or more is preferable) contained in the portions of the mask material 12 under the recesses 15 of the resist 13 (Figs. d, e, code 17 is implanted ions) and after the resist 13 is removed, the portions other than the non- oxygen contained portions of the mask material 12 are removed through plasma etching with the mixed gases of halogen elements and oxygen, whereby the photo maks is obtained (Figs. f, g).
JP14749178A 1978-11-25 1978-11-25 Manufacture of photo mask Pending JPS5573047A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14749178A JPS5573047A (en) 1978-11-25 1978-11-25 Manufacture of photo mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14749178A JPS5573047A (en) 1978-11-25 1978-11-25 Manufacture of photo mask

Publications (1)

Publication Number Publication Date
JPS5573047A true JPS5573047A (en) 1980-06-02

Family

ID=15431584

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14749178A Pending JPS5573047A (en) 1978-11-25 1978-11-25 Manufacture of photo mask

Country Status (1)

Country Link
JP (1) JPS5573047A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4686162A (en) * 1983-03-01 1987-08-11 Osterreichisches Forschungszentrum Seibersdorf Ges, Mbh Optically structured filter and process for its production
JPH041764A (en) * 1990-04-19 1992-01-07 Toppan Printing Co Ltd Production of photomask

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4686162A (en) * 1983-03-01 1987-08-11 Osterreichisches Forschungszentrum Seibersdorf Ges, Mbh Optically structured filter and process for its production
JPH041764A (en) * 1990-04-19 1992-01-07 Toppan Printing Co Ltd Production of photomask

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