JPS647525A - Pattern formation - Google Patents

Pattern formation

Info

Publication number
JPS647525A
JPS647525A JP62163757A JP16375787A JPS647525A JP S647525 A JPS647525 A JP S647525A JP 62163757 A JP62163757 A JP 62163757A JP 16375787 A JP16375787 A JP 16375787A JP S647525 A JPS647525 A JP S647525A
Authority
JP
Japan
Prior art keywords
exposure
ion beam
focussed
pattern
patterns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62163757A
Other languages
Japanese (ja)
Inventor
Yoshikatsu Kojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62163757A priority Critical patent/JPS647525A/en
Publication of JPS647525A publication Critical patent/JPS647525A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To enable finer image inversed pattern to be formed by using focussed ion beam exposure. CONSTITUTION:The focussed ion beam exposure is used for pattern exposure. In other words, an Si substrate 12 is coated with, e.g., novolak base positive type resist 11 to be baked. Subsequently Be ion beams focussed by a focussing ion beam device are used for the pattern exposure of the novolak base positive type resist. Furthermore, the resist is collectively inverse-exposed to far ultraviolet rays 14 by an ultraviolet ray exposure device. Finally, when the patterns are developed in a mixed solution of potassium hydroxide saturated water soluble developer: water, fine image inversed patterns can be formed.
JP62163757A 1987-06-29 1987-06-29 Pattern formation Pending JPS647525A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62163757A JPS647525A (en) 1987-06-29 1987-06-29 Pattern formation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62163757A JPS647525A (en) 1987-06-29 1987-06-29 Pattern formation

Publications (1)

Publication Number Publication Date
JPS647525A true JPS647525A (en) 1989-01-11

Family

ID=15780122

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62163757A Pending JPS647525A (en) 1987-06-29 1987-06-29 Pattern formation

Country Status (1)

Country Link
JP (1) JPS647525A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8101341B2 (en) 2009-01-15 2012-01-24 Shin-Etsu Chemical Co., Ltd. Patterning process
US8105764B2 (en) 2007-09-25 2012-01-31 Shin-Etsu Chemical Co., Ltd. Patterning process
US8129100B2 (en) 2008-04-04 2012-03-06 Shin-Etsu Chemical Co., Ltd. Double patterning process
US8129099B2 (en) 2008-02-14 2012-03-06 Shin-Etsu Chemical Co., Ltd. Double patterning process
US8192921B2 (en) 2009-01-15 2012-06-05 Shin-Etsu Chemical Co., Ltd. Patterning process
US8198016B2 (en) 2008-05-15 2012-06-12 Shin-Etsu Chemical Co., Ltd. Patterning process
US8216774B2 (en) 2009-02-12 2012-07-10 Shin-Etsu Chemical Co., Ltd. Patterning process
JP2020178022A (en) * 2019-04-17 2020-10-29 東京エレクトロン株式会社 Pattern formation method and pattern formation system

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8105764B2 (en) 2007-09-25 2012-01-31 Shin-Etsu Chemical Co., Ltd. Patterning process
US8129099B2 (en) 2008-02-14 2012-03-06 Shin-Etsu Chemical Co., Ltd. Double patterning process
US8129100B2 (en) 2008-04-04 2012-03-06 Shin-Etsu Chemical Co., Ltd. Double patterning process
US8198016B2 (en) 2008-05-15 2012-06-12 Shin-Etsu Chemical Co., Ltd. Patterning process
US8101341B2 (en) 2009-01-15 2012-01-24 Shin-Etsu Chemical Co., Ltd. Patterning process
US8192921B2 (en) 2009-01-15 2012-06-05 Shin-Etsu Chemical Co., Ltd. Patterning process
US8216774B2 (en) 2009-02-12 2012-07-10 Shin-Etsu Chemical Co., Ltd. Patterning process
JP2020178022A (en) * 2019-04-17 2020-10-29 東京エレクトロン株式会社 Pattern formation method and pattern formation system

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