JPS5572074A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5572074A
JPS5572074A JP14746278A JP14746278A JPS5572074A JP S5572074 A JPS5572074 A JP S5572074A JP 14746278 A JP14746278 A JP 14746278A JP 14746278 A JP14746278 A JP 14746278A JP S5572074 A JPS5572074 A JP S5572074A
Authority
JP
Japan
Prior art keywords
film
substrate
capacitor
transistor
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14746278A
Other languages
Japanese (ja)
Inventor
Hiroshi Shibata
Taiji Oku
Hideo Iwasaki
Kunio Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP14746278A priority Critical patent/JPS5572074A/en
Publication of JPS5572074A publication Critical patent/JPS5572074A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To simplify the element production process by making up a pattern of a pair of memory elements comprising a transistor and a capacitor of a resist having a shielding property against parallel beam such as light and X rays and leaving a part of the film utilizing shade developed by sharp projection of the beam. CONSTITUTION:A thick SiO2 is formed at either end of an Si substrate. A thin SiO2 film 3 is allowed to grow on the capacitor-formed region of the substrate surrounded by the film and a polycrystaline Si film 10 is done so on the film 3 covering the film 2. Then, a pattern of a thick resist film 11 is provided and the substrate 1 is exposed by etching in the given area which is entirely coated with an Si3N4 film 12. Parallel ion beam is irradiated slantly to the film 12 so that the area thereof behind the film 11 is left. Subsequently, the film 11 is removed to form a given diffused region 5 and a layer insulation oxidized film 6 is provided. Thus, a transistor is formed by a generally accepted method. This method elminates the need for making contact holes on the memory cell.
JP14746278A 1978-11-25 1978-11-25 Production of semiconductor device Pending JPS5572074A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14746278A JPS5572074A (en) 1978-11-25 1978-11-25 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14746278A JPS5572074A (en) 1978-11-25 1978-11-25 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5572074A true JPS5572074A (en) 1980-05-30

Family

ID=15430909

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14746278A Pending JPS5572074A (en) 1978-11-25 1978-11-25 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5572074A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117272A (en) * 1980-11-28 1982-07-21 Philips Nv Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117272A (en) * 1980-11-28 1982-07-21 Philips Nv Semiconductor device

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