JPS62291660A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS62291660A JPS62291660A JP61135297A JP13529786A JPS62291660A JP S62291660 A JPS62291660 A JP S62291660A JP 61135297 A JP61135297 A JP 61135297A JP 13529786 A JP13529786 A JP 13529786A JP S62291660 A JPS62291660 A JP S62291660A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- pattern
- light
- size
- ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 239000010409 thin film Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 10
- 238000002834 transmittance Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052804 chromium Inorganic materials 0.000 description 8
- 239000011651 chromium Substances 0.000 description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 7
- 230000007423 decrease Effects 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
〔産業上の利用分野〕
本発明は半導体装置の製造方法に関し、特に写真蝕刻工
程での露光方法に関する。Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor device, and particularly to an exposure method in a photolithography process.
従来性なわれている写真蝕刻工程の露光方法の一例を第
２図に示す。この露光方法は、例えば、刊行物バキュー
ムサイエンステクノロジー（Ｊ。An example of a conventional exposure method in a photolithography process is shown in FIG. This exposure method is described, for example, in the publication Vacuum Science Technology (J.
Ｖａｃ、Ｔｅｃｈｎｏｌ−） １７巻５号（１９８０）
に示されているように、光源２１から出射した光をレン
ズ２２で集束し、マスク２３に照射し、マスク２３を選
択的に透過した光をレンズ２４で集光してウェハ２５上
に結像する。ウェハ２５上にはあらかじめ感光性を有す
るレジストを塗布しておき、露光工程を経た後、現像す
ることによって選択的にレジストを剥離する。Vac, Technol-) Volume 17, No. 5 (1980)
As shown in , the light emitted from a light source 21 is focused by a lens 22 and irradiated onto a mask 23 , and the light that has selectively passed through the mask 23 is focused by a lens 24 to form an image on a wafer 25 . do. A photosensitive resist is coated on the wafer 25 in advance, and after an exposure process, the resist is selectively peeled off by development.
上述した、従来の写真蝕刻工程の露光方法は、微細なパ
ターン転写では様々な問題をかかえている。その一つは
パターン寸法が露九慎で決まる解像限界に近づくにつれ
て、マスクの透過部と遮光部に対応したウェハ上の光強
度の比が小さくなる。The above-mentioned conventional exposure method in the photolithography process has various problems in transferring fine patterns. One of them is that as the pattern size approaches the resolution limit determined by the exposure limit, the ratio of the light intensity on the wafer corresponding to the transmitting part of the mask and the light blocking part becomes smaller.
その結果光強度の比の低下を補正するために、パターン
寸法が小さくなるにつれて最適露光量が大きくなる。し
かしながら、一般に半導体のパターンには楕々のパター
ン寸法が混在しているため、露光量を大きくすると、パ
ターンの大、小によって光強度比が異なり、したがって
大きなパターンから小さなパターンまで、寸法精度、レ
ジスト断面形状を良好に形成するのが困難であるという
欠点があった。As a result, in order to compensate for the decrease in the ratio of light intensities, the optimum exposure amount increases as the pattern size becomes smaller. However, since semiconductor patterns generally have a mixture of elliptical pattern dimensions, when the exposure amount is increased, the light intensity ratio differs depending on the size of the pattern. There was a drawback that it was difficult to form a good cross-sectional shape.
本発明の半導体装置の製造方法は、光源から放射される
光をマスクに照射し、マスクを透過した光を被加工物に
塗布したレジストに照射し、レジストにマスクのパター
ンを転写する半導体装置の製造方法において、光透過領
域での透過率を変化させたマスクを用いることを特徴と
する。A semiconductor device manufacturing method of the present invention irradiates a mask with light emitted from a light source, irradiates a resist coated on a workpiece with light transmitted through the mask, and transfers a pattern of the mask onto the resist. The manufacturing method is characterized by using a mask with varying transmittance in a light-transmitting region.
本発明の好ましい実施態様においては、１μｍ以上の幅
の光透過領域に透過率を下げるための薄膜を付加したマ
スクを用いる。In a preferred embodiment of the present invention, a mask is used in which a thin film for reducing transmittance is added to a light transmitting region having a width of 1 μm or more.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第３図に本発明の原理を示す。第３図（ａ）に示すよう
に、石英ガラス３１上に形成した遮光用クロム３２と光
透過領域幅が１μｍ以上の大きなパターン部３５に、あ
る透過率を有する薄膜３３を設ける。その結果マスクの
透過光は第３図（ｂ）に示すように大きなパターン部３
５では小さなパターン部３４よりも透過光の強度が小さ
くなる。この透過光が第３図（ｄ）に示したように、パ
ターンが微細になるにつれて光強度の比が小さくなる特
性を有するレンズによって結像される結果、ウェハ上に
おいては第３図（Ｃ）に示すように、パターン寸法によ
らずほぼ一定の光強度の比を得ることが可能となる。FIG. 3 shows the principle of the present invention. As shown in FIG. 3(a), a thin film 33 having a certain transmittance is provided on a light-shielding chromium 32 formed on a quartz glass 31 and a large pattern portion 35 having a light transmitting region width of 1 μm or more. As a result, the light transmitted through the mask is transmitted to the large pattern area 3 as shown in FIG. 3(b).
5, the intensity of transmitted light is smaller than that of the small pattern portion 34. As shown in FIG. 3(d), this transmitted light is imaged by a lens that has a characteristic that the light intensity ratio decreases as the pattern becomes finer, and as a result, as shown in FIG. 3(C) on the wafer. As shown in , it is possible to obtain a substantially constant light intensity ratio regardless of the pattern dimensions.
第１図（ａ）に本発明の第１の実施例を示す。石英ガラ
ス１上に選択的に形成した遮光用クロム２に加えて光透
過領域幅が１μｍ以上の大きなパターン部５に２μｍ厚
のノボラック系ポジ型フォトレジスト３を付加する。フ
ォトレジスト３は透過部での透過率を制限する働きを有
しており、上述のレジスト厚２μｍの場合、透過率は１
５％低下する。FIG. 1(a) shows a first embodiment of the present invention. In addition to the light-shielding chromium 2 selectively formed on the quartz glass 1, a 2 μm thick novolac positive type photoresist 3 is added to the large pattern portion 5 having a light transmitting region width of 1 μm or more. The photoresist 3 has the function of limiting the transmittance in the transparent part, and in the case of the above-mentioned resist thickness of 2 μm, the transmittance is 1.
5% decrease.
第１図（ｂ）に本発明の第２の実施例を示す。第１図（
ａ）のレジストに相当する部分に、より透過率の小さい
クロムの薄膜を用いている。A second embodiment of the present invention is shown in FIG. 1(b). Figure 1 (
A thin chromium film with lower transmittance is used in the part corresponding to the resist in a).
以上本発明の実施例を元による投影露光の場合について
説明してきたが、もちろんコンタクト露光、近接露光に
も適用でき、また光露光以外にもＸ線露光にも適用でき
る。１だ露光するウェハは単層レジストだけでなく、多
層レジストについても有効であり、またマスクのパター
ンは単純なライン＆スヘースだけでなくコンタクトホー
ルに対しても有効なことは明らかである。Although the embodiments of the present invention have been described above in the case of projection exposure, they can of course be applied to contact exposure and proximity exposure, and can also be applied to X-ray exposure in addition to light exposure. It is clear that the wafer that is exposed once is effective not only for single-layer resists but also for multi-layer resists, and that the mask pattern is effective not only for simple lines and spaces but also for contact holes.
以上説明したように本発明は、マスクの透過率をパター
ン寸法に応じて制御したマスクを用いることにより、微
細なパターン部の光強度比の低下を補正できる。その結
果微細なパターンの転写精度、寸法精度に優れ、かつ従
来より微細なパターンの形成が行なえる効果がある。As explained above, according to the present invention, by using a mask whose transmittance is controlled according to the pattern dimensions, it is possible to correct a decrease in the light intensity ratio of a fine pattern portion. As a result, the transfer accuracy and dimensional accuracy of fine patterns are excellent, and it is possible to form finer patterns than before.
第１図（ａ）は本発明の第１の実施例に用いるマスクの
断面図、第１図（ｂ）は本発明の第２の実施例に用いる
マスクの断面図、第２図（ａ）は従来の露光方法を示す
原理図、第２図（ｂ）は従来のマスクの断面図、第３図
（ａ）〜（ｄ）は本発明の詳細な説明する説明図である
。
１・・・・・・石英基板、２・・・・・・遮光用クロム
、３・・・・・・レジスト、４・・・・・・小さなパタ
ー／、５・・・・・・大きなパターン、６・・−・・・
石英基板、７・・・・・・遮光用クロム、８・・・・・
・クロム薄膜、９・・・・・・小さなパターン、１０・
・・・・・大きなパターン、２１・・・・・・光源、２
２・・・・・・レンズ、２３・・・・・・マスク、２４
・・・・・・レンズ、２５・・・・・・ウェハ、２６・
・・・・・石英基板、２７・・・・・・遮光用クロム、
３１・・・・・・石英基板、３２・・・・・−遮光用ク
ロム、３３・・・・・・透過率制限用薄膜、３４・・・
・・・小さなパターン、３５・・・・・・大きなパター
ン。
代理人 弁理士 内 原 ヨ。
（’ｌ）
矛 １ 図
（０Ｌ）
＄２ 圀FIG. 1(a) is a cross-sectional view of a mask used in a first embodiment of the present invention, FIG. 1(b) is a cross-sectional view of a mask used in a second embodiment of the present invention, and FIG. 2(a) is a cross-sectional view of a mask used in a second embodiment of the present invention. 2(b) is a sectional view of a conventional mask, and FIGS. 3(a) to 3(d) are explanatory diagrams explaining the present invention in detail. 1...Quartz substrate, 2...Chromium for light shielding, 3...Resist, 4...Small pattern/, 5...Large pattern , 6...
Quartz substrate, 7...Chromium for light shielding, 8...
・Chromium thin film, 9...Small pattern, 10・
...Large pattern, 21 ...Light source, 2
2...Lens, 23...Mask, 24
... Lens, 25 ... Wafer, 26.
...Quartz substrate, 27...Chromium for light shielding,
31...Quartz substrate, 32...-Chromium for light shielding, 33...Thin film for transmittance limiting, 34...
...Small pattern, 35...Large pattern. Representative: Yo Uchihara, patent attorney. ('l) spear 1 diagram (0L) $2 圀
Claims (2)
を透過した光を被加工物上に塗布したレジストに照射し
、レジストにマスクのパターンを転写する半導体装置の
製造方法において、光透過領域での透過率を変化させた
マスクを用いることを特徴とする半導体装置の製造方法
。(1) In a semiconductor device manufacturing method in which a mask is irradiated with light emitted from a light source, the light transmitted through the mask is irradiated onto a resist coated on a workpiece, and a pattern of the mask is transferred to the resist. 1. A method of manufacturing a semiconductor device, comprising using a mask with varying transmittance in regions.
めの薄膜を付加したマスクを用いることを特徴とする特
許請求の範囲第（１）項記載の半導体装置の製造方法。(2) A method for manufacturing a semiconductor device according to claim (1), characterized in that a mask is used in which a thin film is added to reduce transmittance in a light transmitting region having a width of 1 μm or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61135297A JPS62291660A (en) | 1986-06-10 | 1986-06-10 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61135297A JPS62291660A (en) | 1986-06-10 | 1986-06-10 | Production of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62291660A true JPS62291660A (en) | 1987-12-18 |
Family
ID=15148407
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61135297A Pending JPS62291660A (en) | 1986-06-10 | 1986-06-10 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62291660A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0997779A1 (en) * | 1998-10-29 | 2000-05-03 | Canon Kabushiki Kaisha | Exposure method and x-ray mask structure for use with the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52133756A (en) * | 1976-04-30 | 1977-11-09 | Zeiss Jena Veb Carl | Method of manufacturing phase mask for amplification system |
| JPS56168654A (en) * | 1980-05-30 | 1981-12-24 | Fujitsu Ltd | Photomask |
-
1986
- 1986-06-10 JP JP61135297A patent/JPS62291660A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52133756A (en) * | 1976-04-30 | 1977-11-09 | Zeiss Jena Veb Carl | Method of manufacturing phase mask for amplification system |
| JPS56168654A (en) * | 1980-05-30 | 1981-12-24 | Fujitsu Ltd | Photomask |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0997779A1 (en) * | 1998-10-29 | 2000-05-03 | Canon Kabushiki Kaisha | Exposure method and x-ray mask structure for use with the same |
| US6272202B1 (en) | 1998-10-29 | 2001-08-07 | Canon Kabushiki Kaisha | Exposure method and X-ray mask structure for use with the same |
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