JPS5789221A - Multiple mask - Google Patents

Multiple mask

Info

Publication number
JPS5789221A
JPS5789221A JP16551080A JP16551080A JPS5789221A JP S5789221 A JPS5789221 A JP S5789221A JP 16551080 A JP16551080 A JP 16551080A JP 16551080 A JP16551080 A JP 16551080A JP S5789221 A JPS5789221 A JP S5789221A
Authority
JP
Japan
Prior art keywords
substrate
rays
ray
exposure
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16551080A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP16551080A priority Critical patent/JPS5789221A/en
Priority to GB8130141A priority patent/GB2088084B/en
Priority to FR8121578A priority patent/FR2494865B1/en
Priority to DE3146559A priority patent/DE3146559C2/en
Publication of JPS5789221A publication Critical patent/JPS5789221A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Abstract

PURPOSE: To reduce the number of masks and increase fitting accuracy at exposure, by providing a means to form a figure-patterned film which has absorbing capability for two or more of wavelengths among rays of electron beams, X rays, and lights on a substrate surface.
CONSTITUTION: A figure-patterned film on the surface of a mask substrate acquires selectivity in hampering capability according to wavelengths among rays of electron, X rays, and lights. A means is provided to form a figure- patterned film, which has absorbing capability for each wavelength, on the same substrate. For instance, an SiO2 film 2 is formed on an Si-substrate. An Au-pattern 3 is formed as a light-exposure pattern by photolithography. Similarly, Au-patterns 4, 5 for X-ray exposure are formed by photolithography. Next, Si is removed from the back surface of the Si-substrate by etching and leaving an Si frame 1, and a multiple mask is formed. This means enables combinations other than the above; an ultraviolet ray and a far ultraviolet ray, an electron ray and a light ray, and so forth.
COPYRIGHT: (C)1982,JPO&Japio
JP16551080A 1980-11-25 1980-11-25 Multiple mask Pending JPS5789221A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP16551080A JPS5789221A (en) 1980-11-25 1980-11-25 Multiple mask
GB8130141A GB2088084B (en) 1980-11-25 1981-10-06 Pattern exposure mask
FR8121578A FR2494865B1 (en) 1980-11-25 1981-11-18 EXPOSURE MASK FOR MULTIPLE RADIATION
DE3146559A DE3146559C2 (en) 1980-11-25 1981-11-24 Exposure mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16551080A JPS5789221A (en) 1980-11-25 1980-11-25 Multiple mask

Publications (1)

Publication Number Publication Date
JPS5789221A true JPS5789221A (en) 1982-06-03

Family

ID=15813757

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16551080A Pending JPS5789221A (en) 1980-11-25 1980-11-25 Multiple mask

Country Status (4)

Country Link
JP (1) JPS5789221A (en)
DE (1) DE3146559C2 (en)
FR (1) FR2494865B1 (en)
GB (1) GB2088084B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61143757A (en) * 1984-12-17 1986-07-01 Mitsubishi Electric Corp X-ray exposure mask
JPS62291116A (en) * 1986-06-11 1987-12-17 Nippon Telegr & Teleph Corp <Ntt> X-ray mask and method for forming pattern using said mask

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3623637A1 (en) * 1986-07-12 1988-01-21 Kernforschungsz Karlsruhe METHOD FOR PRODUCING MICROSTRUCTURES OF DIFFERENT STRUCTURAL HEIGHT BY MEANS OF X-RAY DEPTH LITHOGRAPHY
US4865952A (en) * 1986-09-20 1989-09-12 Mitsubishi Denki Kabushiki Kaisha Method of forming a T-shaped control electrode through an X-ray mask
IL88837A (en) * 1988-12-30 1993-08-18 Technion Res & Dev Foundation Method for the preparation of mask for x-ray lithography
US5156942A (en) * 1989-07-11 1992-10-20 Texas Instruments Incorporated Extended source E-beam mask imaging system and method
CN1196175C (en) 2000-05-25 2005-04-06 凸版印刷株式会社 Substrate for transfer mask, transfer mask, and method of manufacture thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2193931A (en) * 1936-03-24 1940-03-19 Bela Gaspar Process for producing multicolored photographic images
GB1395718A (en) * 1971-09-16 1975-05-29 Exacta Circuits Ltd Printed circuits
US3930857A (en) * 1973-05-03 1976-01-06 International Business Machines Corporation Resist process
GB1557064A (en) * 1976-09-09 1979-12-05 Mullard Ltd Masks suitable for use in electron image projectors

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61143757A (en) * 1984-12-17 1986-07-01 Mitsubishi Electric Corp X-ray exposure mask
JPS62291116A (en) * 1986-06-11 1987-12-17 Nippon Telegr & Teleph Corp <Ntt> X-ray mask and method for forming pattern using said mask
JPH0658875B2 (en) * 1986-06-11 1994-08-03 日本電信電話株式会社 X-ray mask and pattern forming method using the same

Also Published As

Publication number Publication date
GB2088084B (en) 1983-12-21
FR2494865B1 (en) 1988-05-20
DE3146559A1 (en) 1982-11-11
FR2494865A1 (en) 1982-05-28
DE3146559C2 (en) 1985-06-13
GB2088084A (en) 1982-06-03

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